Zobrazeno 1 - 10
of 39
pro vyhledávání: '"C. Heedt"'
Publikováno v:
Microwave and Optical Technology Letters. 11:125-128
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e946810debd3d891bf77f5c00ef8e15f
https://doi.org/10.1002/(sici)1098-2760(19960220)11:3<125::aid-mop4>3.0.co
https://doi.org/10.1002/(sici)1098-2760(19960220)11:3<125::aid-mop4>3.0.co
Publikováno v:
Journal of Crystal Growth. 150:1225-1229
InP-based heterostructure field-effect transistors (HFETs) incorporating an (InAs) 3 m /(GaAs) 1 m short-period superlattice (SPSL) subchannel are compared to HFETs using a ternary In 0.77 Ga 0.23 As alloy with respect to transport and device perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e13077f2ecc512a434470844b7c3fd0
https://doi.org/10.1016/0022-0248(95)80134-x
https://doi.org/10.1016/0022-0248(95)80134-x
Autor:
Q. Liu, Ralf Reuter, F. J. Tegude, Werner Prost, A. Lindner, C. Heedt, H. Lakner, F. Scheffer
Publikováno v:
Journal of Crystal Growth. 145:326-331
Ga 0.5 In 0.5 P has been evaluated as a highly strained Al-free wide gap material for heterostructure field-effect transistor (HFET) application on InP substrates using the metalorganic vapour phase epitaxy (MOVPE) technique. The growth mode has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5226a0990c0a60107a386d6839cd2a9b
https://doi.org/10.1016/0022-0248(94)91071-5
https://doi.org/10.1016/0022-0248(94)91071-5
Autor:
Franz-Josef Tegude, W. Schlapp, F. Buchali, R. Lösch, C. Heedt, Werner Prost, D. Fritzsche, W. Brockerhoff, H. Nickel
Publikováno v:
IEEE Transactions on Electron Devices. 41:1685-1690
Impact ionization in the channel of InAlAs/InGaAs HEMT's was shown to be a reason for excess gate leakage current. Hot electrons in the high field region of the channel under the gate generate electron-hole pairs. The generated holes can reach the ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5498cbcbedcd0a99e2a0bef830c51f15
https://doi.org/10.1109/16.324575
https://doi.org/10.1109/16.324575
Publikováno v:
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.
InAlAs layers lattice matched to InP were grown by LP-MOVPE (low-pressure metal-organic vapor-phase epitaxy). The layers were characterized with respect to deep levels by C-V, SIMS (secondary ion mass spectroscopy) and photocapacitance measurements.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8de333d238615ec5747c2740b22dd9ba
https://doi.org/10.1109/iciprm.1992.235633
https://doi.org/10.1109/iciprm.1992.235633
Publikováno v:
1993 (5th) International Conference on Indium Phosphide and Related Materials.
A detailed analysis of the gate-leakage current in InAlAs/InGaAs/InP high electron mobility transistor (HEMT) structures is carried out. The different leakage contributions are studied experimentally and theoretically for the evaluation of an optimiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f33e42f32d4fdacf7903a18591aa7f0f
https://doi.org/10.1109/iciprm.1993.380664
https://doi.org/10.1109/iciprm.1993.380664
Publikováno v:
Proceedings of 8th International Conference on Indium Phosphide and Related Materials.
For some applications (e.g.: mixers, oscillators), the 1/f noise upconversion limits the microwave performances of all kinds of HEMTs. That is why the origin of 1/f noise in HEMTs is highly needed. Previously it has been suggested that the channel is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2adcde9ebef99bcccb383ee3c7d4f5ad
https://doi.org/10.1109/iciprm.1996.492259
https://doi.org/10.1109/iciprm.1996.492259
Publikováno v:
Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).
InAlAs/InGaAs heterostructure field-effect transistors (HFET) lattice matched to InP-substrates are candidates for future low-noise microwave and opto-electronic integrated circuit applications. In order to combine them with metal-semiconductor-metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc25af59a3d3211d805ad544f7e70a9f
https://doi.org/10.1109/iciprm.1994.328264
https://doi.org/10.1109/iciprm.1994.328264
Publikováno v:
Seventh International Conference on Indium Phosphide and Related Materials.
Pseudomorphic AlAs layers as hole barriers have been inserted in the spacer of InAlAs/InGaAs HFETs. The channel-gate transfer rate of the holes exponentially decreases with AlAs layer thickness, but the absolute reduction factor is low. The optimum A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22104987ec85bf5c19eaf8339a9a7d9f
https://doi.org/10.1109/iciprm.1995.522170
https://doi.org/10.1109/iciprm.1995.522170
Publikováno v:
Proceedings of International Conference on Microelectronics.
Experiments aiming at finding the microscopic origin of 1/f noise in HEMT's are described. They were suggested by the existence of some specific energy relaxation mechanisms in a 2DEG. 1/f-like noise has been found in the drain voltage of lattice-mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::11bbc76359dd10d950b42710638a9441
https://doi.org/10.1109/icmel.1995.500908
https://doi.org/10.1109/icmel.1995.500908