Zobrazeno 1 - 10
of 118
pro vyhledávání: '"C. Harendt"'
Publikováno v:
2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS).
Nowadays, miniaturized digital image sensors are present in various applications ranging from consumer products such as camera phones to scientific and medical instruments. Because of the rapid reduction of structure size in semiconductor technology,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeb4c6eb6eadaa195b234e4838bbfb3a
https://doi.org/10.1016/b978-0-12-803581-8.00560-9
https://doi.org/10.1016/b978-0-12-803581-8.00560-9
Akademický článek
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Publikováno v:
Materials Science and Engineering: B. 29:13-17
Burying SiO 2 layers into silicon substrates by silicon direct bonding is one of the most promising substrate technologies for increasing the high-temperature capability of smart power devices for high-temperature applications. Leakage currents are s
Publikováno v:
2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC).
Thin film photodiodes open interesting possibilities for enhancing well known optical detection methods in biosensing [1,2]. This contribution focuses on the development of a portable point-of-care (POCT) sensor system based on the direct optical and
Publikováno v:
Proceedings of the 8th International Conference on Multi-Material Micro Manufacture.
Publikováno v:
Journal of Micromechanics and Microengineering. 2:113-116
The basic principles of wafer fusion bonding including pretreatment, room temperature mating, and thermal annealing are presented. Techniques for the characterization of the bond quality are reviewed. Results for fusion bonding of other materials suc
Publikováno v:
Journal of Micromechanics and Microengineering. 1:145-151
The principles of the wafer fusion bonding technique at room temperature and with thermal treatment are described. Experiments using plain and patterned silicon wafers coated with different surface materials are presented. Results obtained for differ
Publikováno v:
IEEE Transactions on Electron Devices. 38:1655-1659
A novel LDMOS transistor structure with breakdown voltages above 100 V has been fabricated in silicon-on-insulator-on-silicon (SOIS). This structure has been fabrication by silicon direct bonding (SDB) and etch-back to a typical film thickness of 1 m
Autor:
A, Arena, M, Boulougoura, H S, Chowdrey, P, Dario, C, Harendt, K-M, Irion, V, Kodogiannis, B, Lenaerts, A, Menciassi, R, Puers, C, Scherjon, D, Turgis
Publikováno v:
Studies in health technology and informatics. 114
The objective of the work in the EC project IVP is the development and evaluation of two prototypes of video systems:- a small wired videoprobe with a CMOS image sensorand- an autonomous video-capsule with a telemetric link for image data transfer to