Zobrazeno 1 - 5
of 5
pro vyhledávání: '"C. H. Stapper"'
Autor:
H.-S. Lee, C. H. Stapper
Publikováno v:
IEEE Transactions on Computers. 41:1078-1087
The discovery of a principle of synergistic fault tolerance is described, and it is shown analytically why it occurs. The performance of its hardware implementation, in the form of a VLSI memory chip, is reported. An analysis of the error-correction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d1f2b9a78a0e475f49b1210a841c5ab
https://doi.org/10.1109/12.165390
https://doi.org/10.1109/12.165390
Autor:
C. H. Stapper
Publikováno v:
Defect and Fault Tolerance in VLSI Systems ISBN: 9781475799590
A dichotomy affects the approach to the manufacture of integrated circuits. Some manufacturers aim for “zero defects,” while others are deeply involved in using circuits with fault-tolerance. For either approach, future manufacturing facilities r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e017b76ffecb99e4e86c227ec9e9c20
https://doi.org/10.1007/978-1-4757-9957-6_1
https://doi.org/10.1007/978-1-4757-9957-6_1
Autor:
C. H. Stapper
Publikováno v:
IBM Journal of Research and Development. 33:174-177
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61ef993174f675b47048701f9a389f0d
https://doi.org/10.1147/rd.332.0174
https://doi.org/10.1147/rd.332.0174
Publikováno v:
The Canadian Journal of Chemical Engineering. 51:315-318
This model is a mathematical description of the interactive, or cooperative diffusions of boron and phosphorus in silicon. The cooperative diffusions are explained in terms of enhanced diffusion coefficients which are concentration dependent. By usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c8a1a7ca8d5fc30bb679b35c3a2bb3c
https://doi.org/10.1002/cjce.5450510308
https://doi.org/10.1002/cjce.5450510308
Autor:
C. H. Stapper
Publikováno v:
Defect and Fault Tolerance in VLSI Systems ISBN: 9781461568018
Redundant word and hit lines have been used successfully for increasing the manufacturing yield of memory chips since 1979 [1, 2, 3]. During early phases of manufacturing, however, there may not be enough redundancy available to repair all the faults
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::458dd6b2561eea898ce593b8fd5dca87
https://doi.org/10.1007/978-1-4615-6799-8_22
https://doi.org/10.1007/978-1-4615-6799-8_22