Zobrazeno 1 - 6
of 6
pro vyhledávání: '"C. H. M. Marée"'
Publikováno v:
Journal of Applied Physics. 84:4013-4016
We report on the use of Rutherford backscattering spectroscopy for thickness analysis of organic light-emitting diode structures (OLEDs) with subnanometer resolution and a spatial resolution
Publikováno v:
Oxidation of Intermetallics
It is known that chromium influences the growth of an alumina oxide layer on β-NiAl at high temperatures. It has been claimed that oxidized chromium will act as nuclei for the θ α-alumina phase transformation. This study presents RBS-data on the p
Publikováno v:
Journal of Applied Physics. 80:2121-2126
To increase the x‐ray optical contrast of Mo/Si multilayers, we study low energy hydrogen ion implantation of amorphous Si layers. Using elastic recoil detection and Rutherford backscattering spectrometry, we measure the result of hydrogen implanta
Autor:
Tom J. Savenije, T.J. Schaafsma, S. J. Roosendaal, Ruud E. I. Schropp, F.H.P.M. Habraken, C. H. M. Marée
Publikováno v:
Journal of Applied Physics 80 (1996)
Journal of Applied Physics, 80, 3381-3389
Journal of Applied Physics, 80, 3381-3389
Electropolymerized porphyrin films on indium–tin–oxide substrates have been characterized using Rutherford backscattering spectrometry, absorption spectroscopy, electrical characterization methods and with step profiling. With these methods the d
Autor:
M. J. van den Boogaard, A. E. T. Kuiper, F.H.P.M. Habraken, C. H. M. Marée, A. J. H. Maas, W.M. Arnoldbik
Publikováno v:
Physical review. B, Condensed matter. 48(8)
The diffusion and reactivity of hydrogen, incorporated in silicon oxynitride films during low-pressure chemical vapor deposition (LPCVD) at 800 \ifmmode^\circ\else\textdegree\fi{}C, has been studied using elastic recoil detection and infrared spectro
Autor:
M.B. Von Der Linden, Candido Pirri, C.H.M. van der Werf, F. Demichelis, Elena Maria Tresso, C. H. M. Marée, J. Daey Ouwens, W. F. van der Weg, P. Rava, Ruud E. I. Schropp
Publikováno v:
Scopus-Elsevier
A series of hydrogenated amorphous silicon carbide (a-Si1–xCx:H) films was deposited by rf glow discharge deposition using various pressures, electrode spacings and hydrogen dilution ratios. We found that improvement of the structure by hydrogen di
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