Zobrazeno 1 - 10
of 483
pro vyhledávání: '"C. H. Griffiths"'
Autor:
C. H. Griffiths, Arnold Pizzey, C. E. Lilley, B. J. Gibb, Robert S. Coffin, Karine Rutault, David S. Latchman, Niclas Thomas, A. T. Thrasher, Sharyn Thomas, Michael Binks, Benjamin M. Chain, Marcus J.D. Wagstaff, S. J. Inges
Publikováno v:
Gene Therapy. 5:718-722
Herpes simplex virus (HSV) has often been suggested as a vector for gene delivery to the nervous system although it is also capable of infecting many other cell types. HSV also has the ability to package large genetic insertions so the expression of
Autor:
C. H. Griffiths
Publikováno v:
British dental journal. 208(12)
Publikováno v:
British journal of pharmacology. 158(6)
Nitric oxide (NO) controls numerous physiological processes by activation of its receptor, guanylyl cyclase (sGC), leading to the accumulation of 3'-5' cyclic guanosine monophosphate (cGMP). Ca(2+)-calmodulin (CaM) regulates both NO synthesis by NO s
Autor:
C. H. Griffiths
Publikováno v:
British dental journal. 206(9)
Autor:
C H, Griffiths
Publikováno v:
British Dental Journal. 208:197-198
Publikováno v:
Addiction biology. 1(4)
Ethanol has profound acute effects on hepatic metabolism. While many of these effects are mediated via the redox imbalance that accompanies hepatic ethanol oxidation via the alcohol dehydrogenase (ADH) pathway, there is increasing evidence that ethan
Autor:
Alijanzadeh, Mehran1, Yahaghi, Rafat1, Rahmani, Jalal1, Yazdi, Nahid1, Jafari, Elahe1, Alijani, Hashem1, Zamani, Narges1, Fotuhi, Razie1, Taherkhani, Elham1, Buchali, Zeinab1, Zarenejad, Masoume1, Mahmoudi, Narges1, Shahmahdi, Najmeh1, Poorzolfaghar, Leila1, Ahmadizade, Safie1, Shahbazkhania, Azam1, Gozal, David2, Lin, Chung‐Ying3,4,5,6 cylin36933@gmail.com, Pakpour, Amir H.1,7 amir.pakpour@ju.se
Publikováno v:
Health Expectations. Dec2023, Vol. 26 Issue 6, p2349-2360. 12p.
Publikováno v:
Journal of Applied Physics; 10/14/2023, Vol. 134 Issue 14, p1-11, 11p
Publikováno v:
Healthcare (2227-9032); Oct2024, Vol. 12 Issue 19, p1957, 20p
Autor:
H. K. Eastwood, C. H. Griffiths
Publikováno v:
Journal of Applied Physics. 45:2201-2206
The structure and resistivity of vanadium dioxide films close to the metal‐semiconductor transition have been studied as a function of stoichiometry. Unit‐cell volume is shown to go through a minimum and the transition temperature and resistivity