Zobrazeno 1 - 10
of 68
pro vyhledávání: '"C. H. Grein"'
Autor:
M. Schwartz, S. H. Kodati, S. Lee, H. Jung, D. Chen, C. H. Grein, T. J. Ronningen, J. C. Campbell, S. Krishna
Publikováno v:
AIP Advances, Vol 12, Iss 9, Pp 095222-095222-7 (2022)
Background doping polarity is a critical design parameter for the performance of many optoelectronic devices, including avalanche photodiodes. We have applied a technique by using capacitance–voltage (CV) measurements on double mesa structures with
Externí odkaz:
https://doaj.org/article/7ec988e749174ba6a055e731efc39205
Autor:
S. Lee, B. Guo, S. H. Kodati, H. Jung, M. Schwartz, A. H. Jones, M. Winslow, C. H. Grein, T. J. Ronningen, J. C. Campbell, S. Krishna
Publikováno v:
Applied Physics Letters. 120:071101
Autor:
D. R. Fink, Theodore J. Ronningen, Joe C. Campbell, Andrew H. Jones, S. H. Kodati, C. H. Grein, Sanjay Krishna, Seung Hyun Lee, M. Winslow
Publikováno v:
DRC
Avalanche photodiodes (APDs) are used in short- and mid-wave infrared applications such as optical communication, LIDAR and 3D imaging [1] due to their internal gain, which improves the signal to noise ratio (SNR). However, the multiplication gain (
Publikováno v:
Journal of Electronic Materials. 43:2978-2983
State-of-the-art room-temperature, high-resolution x-ray and gamma-ray semiconductor detectors can be fabricated from CdZnTe (CZT) crystals. The structural and electronic properties of the CZT surface, especially the contact interfaces, can have a su
Publikováno v:
Journal of Electronic Materials. 42:3379-3384
Bulk passivation of semiconductors with hydrogen continues to be investigated for its potential to improve device performance. In this work, hydrogen-only inductively coupled plasma (ICP) was used to incorporate hydrogen into long-wavelength infrared
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 19:1-6
Type-II strained layer superlattices (SLSs) offer a broad range of design degrees of freedom to help optimize their properties as absorber layers of infrared photon detectors. We theoretically examine a new class of mid-wavelength infrared (2-5 μm b
Publikováno v:
Journal of Electronic Materials. 42:3252-3258
We present the effects of surface treatments on the structural and electronic properties of chemomechanically polished Cd0.9Zn0.1Te before contact deposition. Specifically, polished CdZnTe (CZT) samples were treated with four distinct chemical etchan
Publikováno v:
Journal of Electronic Materials. 41:2700-2706
Molecular beam epitaxy (MBE) growth of HgCdTe offers the possibility of fabricating multilayer device structures with an almost unlimited choice of infrared sensor designs for focal-plane array (FPA) fabrication. HgCdTe offers two major advantages th
Publikováno v:
Journal of Electronic Materials. 41:2745-2753
Ab initio electronic structure calculations were carried out for bulk cadmium telluride (CdTe) and the unreconstructed CdTe polar (111) Cd-terminated and ( $$ \bar{1}\bar{1}\bar{1} $$ ) Te-terminated surfaces. The hybrid functional for the exchange a
Publikováno v:
Journal of Electronic Materials. 40:1860-1866
The interface of ZnTe/Si(211) grown by molecular beam epitaxy was investigated by high-resolution transmission electron microscopy. Several types of defects such as misfit dislocations, stacking faults, agglomerations of vacancies, and precipitates w