Zobrazeno 1 - 10 of 12 pro vyhledávání: '"C. H. Goo"'
1
Influence of adherence to the national guidance on nutrition screening and dietitian referral on clinical outcomes of those requiring parenteral nutrition
Autor: Royce P Vincent, H. L. Delaney, C. H. Goo, C. W. le Roux, P. F. Wu
Publikováno v: Journal of Human Nutrition and Dietetics. 23:190-193
Background: National guidance in the UK on nutrition support suggests that all patients should be screened on initial admission to hospital and, where appropriate, be referred to a healthcare professional. The present study aimed to investigate wheth
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c1bf55e503f324754f64578600e8482
https://doi.org/10.1111/j.1365-277x.2010.01041.x
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2
New electron and hole traps in GaAsP alloy
Autor: Y. T. Lim, C. H. Goo, W. S. Lau, Ming-Fu Li, Kie Leong Teo
Publikováno v: Scopus-Elsevier
Two electron traps and a hole trap have been observed in vapour phase epitaxial GaAs0.6P0.4 materials by deep level transient spectroscopy. The dominant electron trap A, which has never previously been reported, has a thermal emission activation ener
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45547cfb71c96d86ff892c368656f45f
https://doi.org/10.1080/002072197135616
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6
Investigation of Bond-Pad Related Inter-Metal Dielectric Crack
Autor: T. Tun, C. K. Oh, Z. G. Song, B.H. Er, C. P. Soo, C. H. Goo, S. Redkar
Publikováno v: International Symposium for Testing and Failure Analysis.
Bond-pad is an important structure of a microelectronic device because it plays the role of enabling the device to communicate with other external devices. Its integrity directly affects the performance of the microelectronic device. This paper prese
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d6556cb7b8361a2bb0af49d49fec64a5
https://doi.org/10.31399/asm.cp.istfa2003p0082
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7
A Study of Traps in Semi-Insulating III-V Epitaxial Films by Zero Bias Transient Current Spectroscopy
Autor: Tow Chong Chong, C. H. Goo, Wai Shing Lau, C. T. Tan
Publikováno v: MRS Proceedings. 340
Semi-insulating Al0.3Ga0.7AS epitaxial films grown by molecular beam epitaxy at 400°C have been characterised by a recently proposed technique known as zero quiescent bias voltage transient current spectroscopy (ZBTCS). Separated electron trap spect
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::07b54b9839e510e0e59032032e69bbba
https://doi.org/10.1557/proc-340-307
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9
Confirmation of the Correlation between the Electrical Hysteresis and Silicon Dangling Bond Density in Silicon Nitride by UV Irradiation of Nearly Hysteresis Free Metal-Nitride-Silicon Capacitors
Autor: C. H. Goo, Wai Shing Lau
Publikováno v: Japanese Journal of Applied Physics. 30:L1996
Previously, Lau [W. S. Law: Jpn. J. Appl. Phys. 29 (1990) L690] has pointed out that part of the hysteresis ΔV + in MNS (Metal-Nitride-Silicon) capacitors is correlated to the spin density measured by electron spin resonance and the other part of th
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::65afc7c367a377714c8060e042f2cd0c
https://doi.org/10.1143/jjap.30.l1996
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