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Akademický článek

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

Autor: C. H. Wang, G. Doornbos, G. Astromskas, G. Vellianitis, R. Oxland, M. C. Holland, M. L. Huang, C. H. Lin, C. H. Hsieh, Y. S. Chang, T. L. Lee, Y. Y. Chen, P. Ramvall, E. Lind, W. C. Hsu, L.-E. Wernersson, R. Droopad, M. Passlack, C. H. Diaz

Publikováno v: AIP Advances, Vol 4, Iss 4, Pp 047108-047108-9 (2014)

Two high-k dielectric materials (Al2O3 and HfO2) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (Dit). X-ray photoelectron spe

Externí odkaz: https://doaj.org/article/c841c504d9fa439b858a0ea944715b3b

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High speed (1ns) and low voltage (1.5V) demonstration of 8Kb SOT-MRAM array

Autor: M. Y. Song, C. M. Lee, S. Y. Yang, G. L. Chen, K. M. Chen, I J. Wang, Y. C. Hsin, K. T. Chang, C. F. Hsu, S. H. Li, J. H. Wei, T. Y. Lee, M. F. Chang, X. Y. Bao, C. H. Diaz, S. J. Lin

Publikováno v: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::81ff3e2983294218c055f2a2cdcbe7f1
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830149

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Scaled p-channel Ge FinFET with optimized gate stack and record performance integrated on 300mm Si wafers

Autor: C. H. Diaz, Richard Kenneth Oxland, K. M. Yin, M.J.H. van Dal, C. H. Hsieh, Y. S. Chang, Georgios Vellianitis, Krishna Kumar Bhuwalka, Blandine Duriez, Gerben Doornbos, Y. C. See, Matthias Passlack, Martin Christopher Holland

Publikováno v: 2013 IEEE International Electron Devices Meeting.

We demonstrate scaled, replacement gate high-k/metal gate p-channel Ge FinFETs integrated onto 300mm Si wafers for which the best device shows record peak gm, ext=2.7mS/μm (gm, int=3.3mS/μm), Q (≡gm, ext/SSsat) = 32.4 and Ion= 497μA/μm at Ioff

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a644a2b021dd3869f7a75957609b9f59
https://doi.org/10.1109/iedm.2013.6724666

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Integrated Stress and Process Calibration in Strained-Si Devices

Autor: K.-C. Tu, C. H. Diaz, T-H Yu, Y.-M. Sheu

Publikováno v: 2009 International Conference on Simulation of Semiconductor Processes and Devices.

We present a novel calibration methodology that (i) integrates dopant diffusion, mechanical strain and bandgap narrowing for accurate device short channel effect modeling and (ii) deploys stress dependent mobility model for robust device performance

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7003f576be1ba22319fc672d18ad546b
https://doi.org/10.1109/sispad.2009.5290194

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45nm High-k/Metal-Gate CMOS Technology for GPU/NPU Applications with Highest PFET Performance

Autor: Y.S. Chao, P.F. Hsu, W. H. Guo, C.H. Lee, C.L. Chen, C. C. Chen, H. Chuang, H.T. Huang, Y. Yasuda, K. Goto, W.C. Yang, R.C.-J. Chen, C. H. Diaz, K. T. Huang, T. H. Perng, M.S. Liang, Y.T. Hou, J. J. Shen, Y. C. Liu

Publikováno v: 2007 IEEE International Electron Devices Meeting.

Highest planar HK/MG PFET performance (ION = 790 muA at Ioff = 100 nA, Vdd= 1 V and Lg= 33 nm) has been demonstrated with a gate-first dual-metal CMOS integrated process and proven by functional SRAM cell. Integrating modern stressors without IL re-g

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::de69bcd3ff97ea8294ad4416745a2ef1
https://doi.org/10.1109/iedm.2007.4418924

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Low-leakage 0.11 μm CMOS for Low-Power RF-ICs and SRAMs Applications

Autor: Chang-Yun Chang, C. H. Diaz, J. J. Liaw, W. M. Chen, Y. S. Lin, C. C. Wu

Publikováno v: Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::32153eb4340cf1780a89cc86df1f0964
https://doi.org/10.7567/ssdm.2002.p2-1

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Improvement of ultrathin gate oxide by a novel rapid thermal oxidation process with in-situ steam generation

Autor: S. C. Sun, C. H. Yu, S.M. Jang, C. H. Diaz, Mo-Chium Yu, Mong-Song Liang

Publikováno v: SPIE Proceedings.

This paper reports for the first time the growth of ultra- thin gate oxide by rapid thermal oxidation using in-situ generated steam (Wet RTO). Compared to conventional gate oxide grown by wet furnace and dry RTO, excellent oxide integrity of Wet RTO

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::01e9dec052e98d7084cb361ab9e2e801
https://doi.org/10.1117/12.360557

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Transplantation: clinical studies

Autor: M. Crespo, S. Collado, M. Mir, S. Hurtado, H. Cao, F. Barbosa, C. Serra, C. Hidalgo, A. Faura, J. Garcia de Lomas, M. Montero, J. P. Horcajada, J. M. Puig, J. Pascual, G. Ulusal Okyay, K. Uludag, H. Sozen, D. Arman, A. Dalgic, G. Guz, P. Fraile, P. Garcia-Cosmes, C. Rosado, C. Gonzalez, J. M. Tabernero, C. Costa, A. Saldan, S. Astegiano, M. E. Terlizzi, M. Messina, M. Bergallo, G. Segoloni, R. Cavallo, A. Schwarz, A. Grosshennig, A. Heim, V. Broecker, H. Haller, S. Linnenweber, A. B. Liborio, T. R. Mendoza, R. M. Esmeraldo, M. L. M. B. Oliveira, F. J. V. Nogueira Paes, G. B. Silva Junior, E. F. Daher, K. Hodgson, J. Baharani, A. Fenton, G. Mjoen, A. Hartmann, A. Reisaeter, K. Midtvedt, D. O. Dahle, H. Holdaas, S. Shabir, P. Lukacik, A. Bevins, K. Basnayake, A. Bental, R. G. Hughes, P. Cockwell, R. Burrows, C. A. Hutchison, P. Varma, A. Kumar, A. Hooda, S. Badwal, C. Barrios, L. Fumado, A. Frances, O. Arango, A. Pawlik, J. Chudek, A. Kolonko, J. Wilk, P. Jalowiecki, A. Wiecek, V. Teplan, I. Kralova-Lesna, A. Mahrova, J. Racek, M. tollova, V. Maggisano, V. Caracciolo, A. Solazzo, M. Montanari, F. Della Grotta, D. Nakazawa, S. Nishio, T. Nakagaki, Y. Ishikawa, M. Ito, S. Shibazaki, N. Shimoda, M. Miura, K. Morita, K. Nonomura, T. Koike, L. Locsey, I. Seres, F. Sztanek, M. Harangi, J. Padra, L. Asztalos, G. Paragh, E. Rodriguez-Reimundes, G. Soler-Pujol, C. H. Diaz, M. Davalos-Michel, A. R. Vilches, G. Laham, K. Stavem, G. Norby, E. Tutal, B. Canver, S. Can, S. Sezer, T. Colak, R. Paschoalin, X. Barros, C. Duran, J. V. Torregrosa, E. Tellez, M. Marin, R. Smalcelj, A. Smalcelj, K. Claes, T. Petit, B. Bammens, D. Kuypers, M. Naesens, Y. Vanrenterghem, P. Evenepoel, M. K. Gerhart, S. Colbus, S. Seiler, O. Grun, D. Fliser, G. H. Heine, F. Vincenti, J. Grinyo, C. Larsen, J. Medina Pestana, Y. Dong, D. Thomas, B. Charpentier, E. Luna, R. Martinez, I. Cerezo, F. Ferreira, J. Cubero, J. Villa, C. Martinez, C. Garcia, E. Rodrigo, L. Santos, C. Pinera, E. Quintela, J. C. Ruiz, G. Fernandez-Fresnedo, R. Palomar, C. Gomez-Alamillo, A. L. Martin de Francisco, M. Arias, G. Nainan, M. del Carmen Rial, S. Steinberg, N. Kamar, A. Durrbach, T. Becker, S. Florman, P. Lang, M. Schnitzler, T. Duan, A. Block, M. Sawosz, T. Cieciura, M. Durlik, A. Perkowska, P. Sikora, B. Beck, A. De Mauri, M. Brambilla, P. Stratta, D. Chiarinotti, M. De Leo, S. Attou, H. Arzour, N. Boudrifa, N. Mekhlouf, A. Gaouar, S. Merazga, K. Kalem, F. Haddoum

Publikováno v: Clinical Kidney Journal. 4:4.s2.43-4.s2.43

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0573846066388e150ee03c00d8df0583
https://doi.org/10.1093/ndtplus/4.s2.43

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Influence of preamorphization and recrystallization on indium doping profiles in silicon

Autor: Ray Duffy, M.J.P. Hopstaken, Fred Roozeboom, B.J. Pawlak, C. H. Diaz, T. Dao, Peter B. Griffin, A. Heringa, Chih-Chiang Wang, V. C. Venezia, Y. Tamminga

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:865

The effect of preamorphization and solid-phase epitaxial regrowth on indium doping profiles in silicon has been investigated. It is shown that preamorphized silicon significantly reduces channeling during indium ion implantation, producing a much mor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::252d19ead277f9ce3036210ca2cc1c26
https://doi.org/10.1116/1.1695333

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