Zobrazeno 1 - 10
of 46
pro vyhledávání: '"C. H. Champness"'
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
The diffusion of elemental sodium into p-type Bridgman-grown CuInSe 2+x has already been shown to create a pn-junction by its presence alone [1], provided the molecular amount of added [Na] exceeds the quantity $2\mathrm{x}+\delta$ [2], (from the exc
Autor:
C. H. Champness, G. I. Ahmad
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:693-696
Partial conductivity-type conversion has been observed in monocrystalline p-type CuInSe2 samples after heat treatment in argon at atmospheric pressure at a temperature of 500 °C. The hole concentration in the samples at room temperature was about 10
Autor:
C. H. Champness
Publikováno v:
Journal of Materials Science: Materials in Electronics. 10:605-622
The crystal structure, cleavage properties and phase relations of the ternary semiconductor CuInSe2 are first described. Then the growth of monocrystals of this chalcopyrite from the melt, with the elements as starting materials, is reviewed from a h
Autor:
Z. A. Shukri, C. H. Champness
Publikováno v:
Surface Review and Letters. :419-422
All angles between facets in CuInSe 2 Bridgman-grown crystals were measured and confirmed, by X-ray Laue patterns and diffractometry, to be accounted for by three planes: {101}, {112} and {110}. The {110} facets were less frequent and were found to c
Autor:
Z. A. Shukri, C. H. Champness
Publikováno v:
Acta Crystallographica Section B Structural Science. 53:620-630
A study was made of the cleavage and twinning character in single crystals of the chalcopyrite CuInSe2, copper indium diselenide, grown in the laboratory by a vertical Bridgman method. In this material, with a c/a ratio of 2.006, the two main cleavag
Autor:
C. H. Champness, Y. Wang
Publikováno v:
Journal of Applied Physics. 77:722-730
A study has been made of the xerographic properties of amorphous selenium doped with chlorine at concentrations below 100 parts per million (ppm) by weight. The sample consisted, in each case, of an aluminum plate with a thin deposited rf sputtered a
Autor:
Qi-Hua Zhang, C. H. Champness
Publikováno v:
Canadian Journal of Physics. 69:278-283
Amorphous selenium is often used as the basic photoreceptor material in xerography in the form of a layer on an aluminum substrate. It is found that the dark decay rate of charge on the selenium surface can be reduced by the presence of a thin alumin
Publikováno v:
Canadian Journal of Physics. 69:538-542
In Se–CdO photovoltaic cells, the electron diffusion length Ln in the selenium absorber layer has been determined from measurements of capacitance C and photocurrent under monochromatic illumination by variation of applied reverse bias. If penetrat
Autor:
W. R. Clark, C. H. Champness
Publikováno v:
Canadian Journal of Physics. 69:311-316
1990 It has been known for some time in pn junctions and Schottky junctions that inductance can arise at low frequency in high- level injection owing to conductivity modulation and the transit time of injected carriers. Several observations of this t
Autor:
W. R. Clark, C. H. Champness
Publikováno v:
Applied Physics Letters. 56:1104-1106
A region of anomalous negative capacitance has been observed with forward bias in Se‐Tl Schottky evaporated layer structures. The effect, which is more prevalent in diodes with lower series resistance, is due to an inductive contribution to the imp