Zobrazeno 1 - 10
of 230
pro vyhledávání: '"C. Guedj"'
Autor:
C. E. James, M. Tingaud, G. Laera, C. Guedj, S. Zuber, R. Diambrini Palazzi, S. Vukovic, J. Richiardi, M. Kliegel, D. Marie
Publikováno v:
BMC Complementary Medicine and Therapies, Vol 24, Iss 1, Pp 1-22 (2024)
Abstract Background The optimal stimulation for brain development in the early academic years remains unclear. Current research suggests that musical training has a more profound impact on children's executive functions (EF) compared to other art for
Externí odkaz:
https://doaj.org/article/739a58c091e542c4b0f3367fa772b5f3
Autor:
C. E. James, M. Tingaud, G. Laera, C. Guedj, S. Zuber, R. Diambrini Palazzi, S. Vukovic, J. Richiardi, M. Kliegel, D. Marie
Publikováno v:
BMC Complementary Medicine and Therapies, Vol 24, Iss 1, Pp 1-1 (2024)
Externí odkaz:
https://doaj.org/article/95c32a2b89b44e64baa9298c47cf0021
Akademický článek
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Akademický článek
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Akademický článek
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Autor:
A. Benoist, S. Bernasconi, G. Audoit, C. Guedj, Philippe Candelier, C. Fenouillet-Beranger, T. Dewolf, L. Perniola, E. Jalaguier, S. Jeannot, C. Charpin, Stephane Denorme, E. Vianello, M. Azzaz, Daniele Garbin, C. Cagli
Publikováno v:
Solid-State Electronics. 125:182-188
In this article, the reliability of HfO2-based RRAM devices integrated in an advanced 28 nm CMOS 16 kbit demonstrator is presented. In order to improve the memory performance, a thin Al2O3 layer is inserted in the HfO2-based memory stack (TiN/Ti/HfO2
Publikováno v:
Microelectronic Engineering. 156:78-81
Electrical characterization during focused ion beam (FIB) milling of an elementary Pt/NiO/Pt resistive memory cell is used to localize the conducting channels and to estimate the size and shape of the conducting nanofilament. A good agreement is foun
Autor:
Olivier Pollet, G. Audoit, C. Guedj, Sébastien Barnola, Daniel Benoit, Maxime Garcia-Barros, Francois Leverd, Audrey Jannaud, Nicolas Posseme
Publikováno v:
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩
International audience; Spacer etching realization is considered today as one of the most critical processes for the fully depleted silicon on insulator devices realization. The challenge arises from the fact that low-k spacer needs to be introduced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25bad278b7bb95f625fbfd1e6f332c7e
https://cea.hal.science/cea-02185184/document
https://cea.hal.science/cea-02185184/document
Autor:
Sébastien Barnola, Névine Rochat, Olivier Pollet, C. Guedj, Vincent Ah-Leung, Maxime Garcia Barros, Nicolas Posseme, G. Audoit
Publikováno v:
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2017, 35 (2), pp.021408. ⟨10.1116/1.4977077⟩
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2017, 35 (2), pp.021408. ⟨10.1116/1.4977077⟩
Journal of Vacuum Science and Technology A, American Vacuum Society, 2017, 35 (2), pp.021408. ⟨10.1116/1.4977077⟩
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2017, 35 (2), pp.021408. ⟨10.1116/1.4977077⟩
International audience; Silicon nitride spacer etching is one of the most critical step for the fabrication of CMOS transistors in microelectronics. It is usually done by plasma etching using a fluorocarbon based chemistry. However, from the 14 nm te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e844d17b1b01ae815b10d13a0f71f224
https://hal-cea.archives-ouvertes.fr/cea-02202455
https://hal-cea.archives-ouvertes.fr/cea-02202455
Autor:
C. Guedj, Eugénie Martinez, V. Gorbenko, R. Cipro, Jean-Paul Barnes, Thierry Baron, Wael Hourani, Sylvain David, Franck Bassani, J. Moeyaert
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena
Journal of Electron Spectroscopy and Related Phenomena, 2016, 213, pp.1-10. ⟨10.1016/j.elspec.2016.09.008⟩
Journal of Electron Spectroscopy and Related Phenomena, Elsevier, 2016, 213, pp.1-10. ⟨10.1016/j.elspec.2016.09.008⟩
Journal of Electron Spectroscopy and Related Phenomena, 2016, 213, pp.1-10. ⟨10.1016/j.elspec.2016.09.008⟩
Journal of Electron Spectroscopy and Related Phenomena, Elsevier, 2016, 213, pp.1-10. ⟨10.1016/j.elspec.2016.09.008⟩
The nanoscale chemical characterization of III–V heterostructures is performed using Auger depth profiling below decananometric spatial resolution. This technique is successfully applied to quantify the elemental composition of planar and patterned
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0a85fcc12371887940af9fc8cbb6b3c
https://hal.univ-grenoble-alpes.fr/hal-01881946
https://hal.univ-grenoble-alpes.fr/hal-01881946