Zobrazeno 1 - 10 of 220 pro vyhledávání: '"C. Giesen"'
1
Akademický článek
Climate change, environmental factors and dengue in Africa
Autor: C. Giesen, Z. Herrador, D. Gomez-Barroso
Publikováno v: International Journal of Infectious Diseases, Vol 116, Iss , Pp S22- (2022)
Purpose: The impact of climate change on the distribution of dengue rises controversy and debate; despite the existence of evidence about the effect of changes in certain environmental variables have on its epidemiology. Africa, where data on dengue
Externí odkaz: https://doaj.org/article/35e9673176834fe4b52afe6c531d886a
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2
Akademický článek
Evaluation of the role of environmental factors on the transmission of West Nile Virus in the European Union and Mediterranean countries
Autor: C. Giesen, Z. Herrador, D. Gomez-Barroso, B. Fernandez-Martinez, J. Figuerola, L. Gangoso
Publikováno v: International Journal of Infectious Diseases, Vol 116, Iss , Pp S21- (2022)
Purpose: West Nile virus (WNV) is one of the most widely distributed flaviviruses worldwide, and it is considered an endemic and emerging pathogen in different areas of Europe and the Mediterranean. Mosquitoes of the genus Culex spp. transmit it, and
Externí odkaz: https://doaj.org/article/94882786eff946db87ffbe5c0276615a
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3
Akademický článek
Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors
Autor: G. Naresh-Kumar, A. Vilalta-Clemente, S. Pandey, D. Skuridina, H. Behmenburg, P. Gamarra, G. Patriarche, I. Vickridge, M. A. di Forte-Poisson, P. Vogt, M. Kneissl, M. Morales, P. Ruterana, A. Cavallini, D. Cavalcoli, C. Giesen, M. Heuken, C. Trager-Cowan
Publikováno v: AIP Advances, Vol 4, Iss 12, Pp 127101-127101-13 (2014)
We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al2O3 high electron mobility transistor (HEMT) heterostructure grown by metal
Externí odkaz: https://doaj.org/article/9a46295aa3e341238236b26840a9191f
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4
Elektronická kniha
Boll Weevil Blues : Cotton, Myth, and Power in the American South
Autor: James C. Giesen
Between the 1890s and the early 1920s, the boll weevil slowly ate its way across the Cotton South from Texas to the Atlantic Ocean. At the turn of the century, some Texas counties were reporting crop losses of over 70 percent, as were areas of Louisi
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6
Akademický článek
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8
Elemental distribution and structural characterization of GaN/InGaN core-shell single nanowires by Hard X-ray synchrotron nanoprobes
Autor: C. Giesen, J. Segura-Ruiz, Eleonora Secco, Michael Heuken, Núria Garro, Alberto García-Cristóbal, Hannes Behmenburg, Gema Martínez-Criado, Heruy Taddese Mengistu, Andrés Cantarero, Bartosz Foltynski
Publikováno v: Digital.CSIC. Repositorio Institucional del CSIC
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Nanomaterials
Volume 9
Issue 5
'Nanomaterials ', vol: 9, pages: 691-1-691-11 (2019)
Secco, Eleonora Mengistu, Heruy Taddese Segura-Ruiz, Jaime Martínez Criado, Gema García Cristóbal, Alberto Cantarero Sáez, Andrés Foltynski, Bartosz Behmenburg, Hannes Giesen, Christoph Heuken, Michael Garro Martínez, Núria 2019 Elemental distribution and structural characterization of GaN/InGaN core-shell single nanowires by hard X-ray synchrotron nanoprobes Nanomaterials 9 691
RODERIC. Repositorio Institucional de la Universitat de Valéncia
RODERIC: Repositorio Institucional de la Universitat de Valéncia
Nanomaterials, Vol 9, Iss 5, p 691 (2019)
Improvements in the spatial resolution of synchrotron-based X-ray probes have reached the nano-scale and they, nowadays, constitute a powerful platform for the study of semiconductor nanostructures and nanodevices that provides high sensitivity witho
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5993b15171601af9c5e7b45f3420fdc1
http://hdl.handle.net/10261/182948
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9
Akademický článek
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10
Surface properties of AlInGaN/GaN heterostructure
Autor: Michael Kneissl, Michael Heuken, Daniela Cavalcoli, Patrick Vogt, Albert Minj, C. Giesen, Ana Cros, D. Skuridina
Publikováno v: Minj, Albert Skuridina, D. Cavalcoli, D. Cros Stotter, Ana Vogt, P. Kneissl, M. 2016 Surface properties of AlInGaN/GaN heterostructure Materials Science in Semiconductor Processing 55 26 31
RODERIC. Repositorio Institucional de la Universitat de Valéncia
instname
Surface structural, electronic and electrical properties of the quaternary alloy AlInGaN/GaN heterostructures are investigated. Surface termination, atomic arrangement, electronic and electrical properties of the (0001) surface and (10–11) V-defect
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44d944b3afa9af712b72f460d41d3853
https://doi.org/10.1016/j.mssp.2016.04.005
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