Ge Condensation Using Rapid Thermal Oxidation for SGOI Substrate Preparation

Autor: F. Abbate, E Baylac, Clement Pribat, D. Barge, Marc Juhel, C. Gaumer, A. Pofelski, Vincent Mazzocchi, Germain Serventon, Olivier Gourhant, Francois Andrieu, Maud Bidaud

Publikováno v: ECS Transactions. 64:469-478

High mobility channels are considered as an interesting path to increase PMOS performances for advanced CMOS technology. Silicon-Germanium On Insulator (SGOI) benefits from both the advantage of the SiGe material (hole mobility booster) and the On In

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8deae467a2adb71279cd274bc116fc8
https://doi.org/10.1149/06406.0469ecst

Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications

Autor: Julien Buckley, S. Jeannot, C. Mannequin, Patrice Gonon, Mickael Gros-Jean, Anne-Claire Salaün, H. Grampeix, C. Vallée, C. Gaumer, Vincent Jousseaume

Publikováno v: Thin Solid Films. 525:20-27

This work is focused on the investigation of Au/high k/TiN stacks for Resistive Random Access Memories. A screening of high k oxides, commonly used in advanced metal gates, such as HfO2 and ZrO2, is proposed. These oxides were grown on TiN electrodes

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::384468184a4bf9066e63c8067df9ca4b
https://doi.org/10.1016/j.tsf.2012.10.070

Interest of SiCO low k=4.5 spacer deposited at low temperature (400°C) in the perspective of 3D VLSI integration

Autor: P. Ruault, Gong Bo, O. Hinsinger, B. van Schravendijk, D. Winandy, C. Fenouillet-Beranger, D. Galpin, D. Vo-Thanh, S. Lagrasta, Romain Duru, Remi Beneyton, C. Gaumer, J. Mazurier, S. Chhun, N. Chauvet, Bhadri N. Varadarajan, D. Barge, P. Meijer, N. Sun, Daniel Benoit

Publikováno v: 2015 IEEE International Electron Devices Meeting (IEDM)

For the first time, the interest of a new SiCO low-k spacer material deposited at 400°C is evaluated in the perspective of a 3D VLSI integration. The benefits of SiCO low-k (4.5 vs 7 for SiN) value is preserved throughout the whole integration and t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55b982f281a226468041de5b5459d450
https://doi.org/10.1109/iedm.2015.7409656

Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks

Autor: François Bertin, Eugénie Martinez, C. Gaumer, Christophe Licitra, Jean-Paul Barnes, Névine Rochat, Sandrine Lhostis, M. J. Guittet, Mickael Gros-Jean, Amal Chabli, Nicholas Barrett

Publikováno v: Microelectronic Engineering. 88:72-75

The impact of the deposition of a TiN electrode on the high-k oxide HfO"2 has been investigated, focussing on the dielectric band gap. After the gate elaboration, a non-destructive approach combining Spectroscopic Ellipsometry (SE), Reflection Electr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c86dfae8236ea44748de6e83bc9df8f5
https://doi.org/10.1016/j.mee.2010.08.023

Interface Study in a 'Metal / High-k' Gate Stack: Tantalum Nitride on Hafnium Oxide

Autor: Jean-Marc Fabbri, Claudia Wiemer, Dominique Lafond, C. Gaumer, Sandrine Lhostis, Michele Perego, Eugénie Martinez, Virginie Loup

Publikováno v: 214th Meeting of the Electrochemical-Society, pp. 99–110, Honolulu, OCT 13-15, 2008
info:cnr-pdr/source/autori:C. Gaumer, E. Martinez, S. Lhostis, C. Wiemer, M. Perego, V. Loup, D. Lafond, J.-M. Fabbri/congresso_nome:214th Meeting of the Electrochemical-Society/congresso_luogo:Honolulu/congresso_data:OCT 13-15, 2008/anno:2008/pagina_da:99/pagina_a:110/intervallo_pagine:99–110

In this work, we investigate the crystalline structure and the chemical properties of a "metal / high-k" gate stack with TaN as the gate electrode and HfO(2) as the dielectric. We show that a 3nm-thick layer of HfO(2) is crystallized when it is integ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b93e9599cb2ace60bdf320900b1d3682
https://doi.org/10.1149/1.2981591