Zobrazeno 1 - 10
of 295
pro vyhledávání: '"C. Gaumer"'
Autor:
J. Kanyandekwe, D. Barge, P. Morin, L. Grenouillet, M. Labrot, S. Maitrejean, E. Augendre, V. Lapras, Y. Morand, D. Dutartre, M. Gros-Jean, O. Gourhant, C. Gaumer, N. Rambal, D. Cooper, L. Clement
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d11f975f51d0660963a7b263064dacb
https://doi.org/10.7567/ssdm.2018.c-3-03
https://doi.org/10.7567/ssdm.2018.c-3-03
Autor:
F. Abbate, E Baylac, Clement Pribat, D. Barge, Marc Juhel, C. Gaumer, A. Pofelski, Vincent Mazzocchi, Germain Serventon, Olivier Gourhant, Francois Andrieu, Maud Bidaud
Publikováno v:
ECS Transactions. 64:469-478
High mobility channels are considered as an interesting path to increase PMOS performances for advanced CMOS technology. Silicon-Germanium On Insulator (SGOI) benefits from both the advantage of the SiGe material (hole mobility booster) and the On In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8deae467a2adb71279cd274bc116fc8
https://doi.org/10.1149/06406.0469ecst
https://doi.org/10.1149/06406.0469ecst
Autor:
Jean-Francois Nodin, Philippe Candelier, C. Gaumer, Vincent Jousseaume, Jacques Cluzel, Barbara De Salvo, Elise Le-Roux, Carlo Cagli, Mickael Gros-Jean, C. Carabasse, T. Diokh, S. Jeannot, M. Mellier
Publikováno v:
Thin Solid Films. 533:24-28
In this work, cells based on TiN/TaO x /TiN metal–insulator–metal structure, fabricated in a 65 nm complementary metal oxide semiconductor technology, are investigated in order to propose a good stack candidate for multiple time programmable (MTP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5611559ce00ed5822263edf64f0d741
https://doi.org/10.1016/j.tsf.2012.11.124
https://doi.org/10.1016/j.tsf.2012.11.124
Autor:
Julien Buckley, S. Jeannot, C. Mannequin, Patrice Gonon, Mickael Gros-Jean, Anne-Claire Salaün, H. Grampeix, C. Vallée, C. Gaumer, Vincent Jousseaume
Publikováno v:
Thin Solid Films. 525:20-27
This work is focused on the investigation of Au/high k/TiN stacks for Resistive Random Access Memories. A screening of high k oxides, commonly used in advanced metal gates, such as HfO2 and ZrO2, is proposed. These oxides were grown on TiN electrodes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::384468184a4bf9066e63c8067df9ca4b
https://doi.org/10.1016/j.tsf.2012.10.070
https://doi.org/10.1016/j.tsf.2012.10.070
Autor:
Fausto Sirotti, Olivier Renault, Sandrine Lhostis, Eugénie Martinez, Mathieu G. Silly, C. Gaumer, Christophe Licitra
Publikováno v:
Applied Surface Science. 258:2107-2112
The impact of HfO:N post nitridation anneal (PNA) and gate fabrication on the physico-chemical properties of the TiN/HfO:N/SiO 2 /Si stack are investigated using Soft X-ray Photoelectron Spectroscopy (S-XPS) and Vacuum UltraViolet Spectroscopic Ellip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff2cba43921edf9e0cab4bfa5090f9f1
https://doi.org/10.1016/j.apsusc.2011.03.144
https://doi.org/10.1016/j.apsusc.2011.03.144
Autor:
P. Ruault, Gong Bo, O. Hinsinger, B. van Schravendijk, D. Winandy, C. Fenouillet-Beranger, D. Galpin, D. Vo-Thanh, S. Lagrasta, Romain Duru, Remi Beneyton, C. Gaumer, J. Mazurier, S. Chhun, N. Chauvet, Bhadri N. Varadarajan, D. Barge, P. Meijer, N. Sun, Daniel Benoit
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM)
For the first time, the interest of a new SiCO low-k spacer material deposited at 400°C is evaluated in the perspective of a 3D VLSI integration. The benefits of SiCO low-k (4.5 vs 7 for SiN) value is preserved throughout the whole integration and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55b982f281a226468041de5b5459d450
https://doi.org/10.1109/iedm.2015.7409656
https://doi.org/10.1109/iedm.2015.7409656
Autor:
Fabien Boulanger, M. Casse, Laurent Brunet, Francois Andrieu, C. Gaumer, Olivier Weber, Xavier Garros, Gilles Reimbold, D. Lafond
Publikováno v:
ECS Transactions. 35:515-530
The paper investigates the stability of the transistor threshold voltage VT with scaling in 30nm High-K/Metal Gate technology. For HfO2 and HfZrO oxides, large VT instability, up to 230mV, is seen when the device width (W) is scaled down to 80nm. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecae7fb9867bb80d46d65207e31a56ef
https://doi.org/10.1149/1.3572302
https://doi.org/10.1149/1.3572302
Autor:
François Bertin, Eugénie Martinez, C. Gaumer, Christophe Licitra, Jean-Paul Barnes, Névine Rochat, Sandrine Lhostis, M. J. Guittet, Mickael Gros-Jean, Amal Chabli, Nicholas Barrett
Publikováno v:
Microelectronic Engineering. 88:72-75
The impact of the deposition of a TiN electrode on the high-k oxide HfO"2 has been investigated, focussing on the dielectric band gap. After the gate elaboration, a non-destructive approach combining Spectroscopic Ellipsometry (SE), Reflection Electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c86dfae8236ea44748de6e83bc9df8f5
https://doi.org/10.1016/j.mee.2010.08.023
https://doi.org/10.1016/j.mee.2010.08.023
Autor:
Mathieu Charbonnier, N. Benedetto, F. Fillot, C. Guedj, C. Gaumer, Eugénie Martinez, Sandrine Lhostis, Christophe Licitra, Charles Leroux
Publikováno v:
ECS Transactions. 16:161-169
In this paper, we investigate the impact of thermal budget and HfO 2 thickness on the chemical and electronic properties of the HfO 2 /SiO 2 /S' stack. High temperature anneal at 750°C induces both the regrowth and reoxidation of the SiO 2 interfaci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a838515805ab44b50d039bbe55a0c032
https://doi.org/10.1149/1.2981598
https://doi.org/10.1149/1.2981598