Zobrazeno 1 - 10
of 441
pro vyhledávání: '"C. Gatzke"'
Autor:
Lori C Gatzke
Publikováno v:
Aerospace medicine and human performance. 92(10)
BACKGROUND: Heterozygous familial hypercholesterolemia (HeFH) is an autosomal dominant disease characterized by elevated low-density lipoprotein cholesterol (LDL-C) that increases risk for clinically significant atherosclerotic cardiovascular disease
Publikováno v:
Physical Review B. 58:R4219-R4222
Scanning tunneling spectroscopy has been used to study quantum size effects on the electronic structure of thin InAs films grown on $\mathrm{GaAs}(111)A$ substrates, an example of a heterostructure with a relatively large lattice mismatch. The band g
Publikováno v:
Semiconductor Science and Technology. 13:423-427
A substantial improvement in the electrochemical capacitance-voltage (eCV) profiling technique is proposed by effectively reducing the diode area, thereby extending the range of applicability of this technique to highly spatially confined carrier sys
In situRaman spectroscopy of the selective etching of antimonides in GaSb/AlSb/InAs heterostructures
Publikováno v:
Semiconductor Science and Technology. 13:399-403
The in situ real-time monitoring of the selective etching of semiconductor structures with a Raman microprobe system is demonstrated for the first time. The technique that is applied to GaSb/AlSb/InAs heterostructures allows the accurate timing of th
Publikováno v:
Applied Physics Letters. 76:1902-1904
We present a simple model for μ(E), the field dependence of the mobility, in polar semiconductors. The resulting four-parameter expression is based on a streaming motion idea and a catchment model previously applied to layer rigidity in intercalated
Autor:
C. Gatzke, D. Schroeder
Publikováno v:
Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95.
A device simulator that solves semiconductor models on a parallel computer system has been developed. We present our method for the numerical solution of time dependent semiconductor equations in up to three dimensions. The chosen discretisation in t
Publikováno v:
Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.
The in-situ real-time monitoring of the selective etching of semiconductor structures with a Raman microprobe system is demonstrated for the first time. The technique that is applied to GaSb/AlSb/InAs heterostructures allows the accurate timing of th
Autor:
Kurt Scharnberg, C. Gatzke
Publikováno v:
Physica C: Superconductivity. :2557-2558
The transition temperature and the upper critical field of superlattices of superconductors with different bulk critical temperatures is studied in the clean limit. Using linearized Gor'kov equations we calculate the spatial variation of the self-con
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Akademický článek
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