Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements

Autor: R. Strenaer, Y. Guhel, C. Gaquiere, B. Boudart

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2022, 69 (11), pp.6010-6015. ⟨10.1109/TED.2022.3209636⟩

International audience; The aim of this article is to detect electron traps in AlInN/GaN transistors operating at room temperature by combining pulsed electrical measurement with photoionization techniques to rapidly assess their activation energies

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::98f7fadf03091b708b1480ff1206b416
https://doi.org/10.1109/ted.2022.3209636

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220 GHz E-Plane Transition from Waveguide to Suspended Stripline Integrated on Industrial Organic Laminate Substrate Technology

Autor: V. Fiorese, F. Laporte, J -F. Cailler, D. Campos, G. Catalano, F. Gianesello, G. Ducournau, E. Dubois, C. Gaquiere, B. Tricoteaux, M. Werquin, D. Gloria

Publikováno v: 2021 51st European Microwave Conference (EuMC)
European Microwave Conference, EuMC 2021, Session EuMC06-3D to 2D Transitions and New Materials for mmWave system Integration
European Microwave Conference, EuMC 2021, Session EuMC06-3D to 2D Transitions and New Materials for mmWave system Integration, EuMIC/EuMC/EuMW, Apr 2021, London, United Kingdom. pp.99-102, ⟨10.23919/EuMC50147.2022.9784166⟩

International audience; In this paper, an assessment up to 220 GHz of industrial organic laminate substrate technology to integrate millimeter-wave (mmW) waveguide to suspended stripline (SSL) transition is proposed. A WR5 waveguide transition has be

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99f6f165d17eb0ead703cdaa0e21010b
https://doi.org/10.23919/eumc50147.2022.9784166

Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology

Autor: Sylvie Lepilliet, C. Gaquiere, Daniel Gloria, Etienne Okada, M. Margalef-Rovira, Guillaume Ducournau, C. Maye, I. Alaji

Publikováno v: IEEE Transactions on Microwave Theory and Techniques
IEEE Transactions on Microwave Theory and Techniques, 2022, 70 (1), pp 444-452. ⟨10.1109/TMTT.2021.3111170⟩
IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, In press, pp.1-1. ⟨10.1109/TMTT.2021.3111170⟩

This article is an expanded version from the 2020 International Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits, Cardiff, 16-17 July 2020.; International audience; This article aims to discuss challenges and performances of a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5aeadd11dafe439590dd7e643263c0e
https://hal.science/hal-03507882

Mm-wave single-pole double-throw switches: HBT-vs MOSFET-based designs

Autor: Loic Vincent, Philippe Ferrari, A. A. Lisboa de Souza, M. Margalef-Rovira, C. Gaquiere, Emmanuel Pistono, Manuel J. Barragan, Florence Podevin

Publikováno v: 2021 19th IEEE International New Circuits and Systems Conference (NEWCAS)
19th IEEE International New Circuits and Systems Conference, NEWCAS 2021
19th IEEE International New Circuits and Systems Conference, NEWCAS 2021, Jun 2021, Toulon, France. ⟨10.1109/NEWCAS50681.2021.9462753⟩
NEWCAS
19th IEEE International New Circuits and Systems Conference, NEWCAS 2021, Jun 2021, Toulon( virtual), France. ⟨10.1109/NEWCAS50681.2021.9462753⟩

International audience; This paper aims to compare the performance of HBT-based and MOSFET-based mm-Wave SPDT switches in a single BiCMOS technology. To the best of authors' knowledge, a direct comparison of this function in the same integrated proce

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0603bdbb5003d26f65a7d7b28d55e37
https://hal.science/hal-03362262/file/Margalef-Rovira_NEWCAS2021.pdf