Zobrazeno 1 - 10
of 19
pro vyhledávání: '"C. Gaonach"'
Publikováno v:
Semiconductor Science and Technology. 5:237-241
In order to investigate the electrical damage induced in Si-doped GaAs by CH4/H2 RIE, electrical characterisations (I-V, C-V) of Schottky diodes fabricated on the dry-etched surface were performed. After RIE carried out at 1.3 W cm-2, the Schottky ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95dedb724be438e684b6dcd2a69d3fd6
https://doi.org/10.1088/0268-1242/5/3/009
https://doi.org/10.1088/0268-1242/5/3/009
Publikováno v:
Applied Physics Letters. 58:367-369
Two pseudomorphic InxGa1−xAs/Al0.4Ga0.6As/GaAs semiconductor/insulator/ semiconductor heterostructures (PM‐SIS) with indium mole fractions x=0.15 and 0.25 were investigated and compared to a conventional GaAs/AlGaAs/GaAs SIS structure by means of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e297bb41272866fec18b51e55ce0c249
https://doi.org/10.1063/1.104636
https://doi.org/10.1063/1.104636
Publikováno v:
Electronics Letters. 26:210
We report on the transconductance dependence on gate length for pseudomorphic (PM) and conventional GaAs gate SISFETs. With an identical material structure, except for the GaInAs channel, PM-SISFETs have higher transconductances at room temperature,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::734ba1401c48b34180918fb1150923e0
https://doi.org/10.1049/el:19900141
https://doi.org/10.1049/el:19900141
Autor:
G. Creuzet, C. Gaonach
Publikováno v:
Synthetic Metals. 16:299-304
We present results of high-resolution thermal expansion at low temperature in (TMTSF) 2 PF 6 along the a -axis. Within our sensitivity ( Δl / l ∼ 10 −8 ), no anomaly is present at the metal-to-insulator transition at 13.7 K. A power-law analysis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ff09109375f8bcd66e660ed3125f391
https://doi.org/10.1016/0379-6779(86)90166-9
https://doi.org/10.1016/0379-6779(86)90166-9
Publikováno v:
Molecular Crystals and Liquid Crystals. 119:265-268
We present the first low temperature measurements of thermal expansion and magnetostriction on (TMTSF)2PF6 and (TMTSF)2ClO4. Above 40 K, the thermal expansion of the two salts is very large and follows a quite linear behaviour. Within our sensitivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b047bc6823712d7e6f160bac20e49024
https://doi.org/10.1080/00268948508075168
https://doi.org/10.1080/00268948508075168
Publikováno v:
Journal de Physique. 48:107-113
We present high resolution thermal expansion measurements at low temperature in (TMTSF) 2 CIO 4 along the a-axis in both quenched and relaxed states. The main contribution arises from phonons.Below 24 K, an additional negative contribution develops p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b433abf7809576a4497416c946fde28
https://doi.org/10.1051/jphys:01987004801010700
https://doi.org/10.1051/jphys:01987004801010700
Publikováno v:
Synthetic Metals. 19:245-250
The low temperature electronic properties in organic conductors are often dependent on high temperature structural transitions in which the pressure may play an important role. As a consequence, high resolution thermal expansion gives some important
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c40ad1420df03fb7cffe3a13bbae61e
https://doi.org/10.1016/0379-6779(87)90362-6
https://doi.org/10.1016/0379-6779(87)90362-6
Publikováno v:
Physica B+C. 130:138-140
We present magnetostriction and thermal expansion measurements on the orthorhombic intermediate valence compound CeNi, at low temperature along the three symmetry axes. The field effects are clearly the sum of a main contribution arising from the int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eb6eb2125b56215f678bbd15cd03bd7
https://doi.org/10.1016/0378-4363(85)90205-0
https://doi.org/10.1016/0378-4363(85)90205-0
Publikováno v:
MRS Proceedings. 144
Electrical characterizations (I–V,C–V) of TiPtAu/n-type GaAs Schottky diodes were performed in order to investigate the electrical damage introduced by CH4JH2 RIE. The effective barrier height measured according to the thermionic conduction model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::226faf636c2bffb679dc0d2b07d1d10f
https://doi.org/10.1557/proc-144-507
https://doi.org/10.1557/proc-144-507