Výsledky vyhledávání - "C. G. Willison"

Experimental and theoretical study of ion distributions near 300 μm tall steps on rf-biased wafers in high density plasmas

Autor: C. G. Willison, T. W. Hamilton, D. Kim, B. P. Aragon, Demetre J. Economou, I. C. Abraham, Paul A. Miller, J. R. Woodworth, Randy J. Shul

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:147-155

We present an experimental and theoretical study of ion fluxes, energy distributions, and angular distributions close to 300 μm tall “steps” on rf-biased wafers in high-density argon plasmas. This feature size is important in the etching of micr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::333704c07473ea7a01f885b4ac699c85
https://doi.org/10.1116/1.1527951

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Ions in holes: An experimental study of ion distributions inside surface features on radio-frequency-biased wafers in plasma etching discharges

Autor: J. R. Woodworth, Ion C. Abraham, T. W. Hamilton, Paul A. Miller, C. G. Willison, B. P. Aragon, Randy J. Shul

Publikováno v: Journal of Applied Physics. 92:716-723

We present an experimental study of ion fluxes, energy distributions, and angular distributions inside surface features on radio frequency-biased wafers in high-density, inductively driven discharges in argon. Specifically, we present data on ion dis

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2b10c88c631da1f3a4918df80c7db8f5
https://doi.org/10.1063/1.1486054

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Ion energy distributions at rf-biased wafer surfaces

Autor: C. G. Willison, T. W. Hamilton, I. C. Abraham, B. P. Aragon, Paul A. Miller, Randy J. Shul, J. R. Woodworth, Merle E. Riley

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:873-886

We report the measurement of ion energy distributions at a radio frequency (rf)-biased electrode in inductively driven discharges in argon. We compare measurements made with a gridded energy analyzer and a commercial analyzer that contains a mass spe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0a05e47e4ba949cbf510ea94fca0a573
https://doi.org/10.1116/1.1472421

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Inductively coupled plasma-induced etch damage of GaN p-n junctions

Autor: Albert G. Baca, C. G. Willison, Randy J. Shul, L. Zhang, J. Han, Stephen J. Pearton, Fan Ren

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1139-1143

Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4f8e37c6bf2b59f244f1122f3fe5a48d
https://doi.org/10.1116/1.582313

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Epitaxially-grown GaN junction field effect transistors

Autor: Luke F. Lester, Randy J. Shul, Umesh Mishra, L. Zhang, John C. Zolper, P.C. Chang, Steven P. DenBaars, Albert G. Baca, C. G. Willison

Publikováno v: IEEE Transactions on Electron Devices. 47:507-511

Junction field effect transistors (JFETs) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The dc and microwave characteristics of the device are presented. A junction breakdown voltage of 56 V is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7f9e8b462440e56c646410eb9f1fc902
https://doi.org/10.1109/16.824716

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GaN/AlGaN HBT fabrication

Autor: C. G. Willison, Jeffrey R. LaRoche, Randy J. Shul, K. B. Jung, S. M. Donovan, Robert G. Wilson, Fan Ren, Stephen J. Pearton, H. Cho, C.R. Abernathy, Xian-An Cao, Rose Kopf, J. Han, Peter Chow, R. Hickman, J. M. Van Hove, L. Zhang, J. J. Klaassen, Albert G. Baca

Publikováno v: Solid-State Electronics. 44:239-244

Discrete GaN/AlGaN heterojunction bipolar transistors (HBTs) were fabricated on material grown by both metal organic chemical vapor deposition and molecular beam epitaxy. For both types of material, DC current gains of ∼10 were achieved in 90 μm e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2f2b88d9104c400528c6f2bfa4988261
https://doi.org/10.1016/s0038-1101(99)00229-4

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Group-III Nitride ETCH Selectivity IN BCl /Cl ICP Plasmas

Autor: Randy J. Shul, J. Hong, J. Han, Lester, C. G. Willison, C. R. Abernathy, Stephen J. Pearton, L. Zhang

Publikováno v: MRS Internet Journal of Nitride Semiconductor Research. 4:823-833

Patterning the group-III nitrides has been challenging due to their strong bond energies and relatively inert chemical nature as compared to other compound semiconductors. Plasma etch processes have been used almost exclusively to pattern these films

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5b48cb15adea94721519befd5c96f430
https://doi.org/10.1557/s1092578300003483

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High-density plasma etch selectivity for the III–V nitrides

Autor: C. G. Willison, J. W. Lee, Randy J. Shul, S. M. Donovan, C. R. Abernathy, J. D. MacKenzie, J. Han, M. M. Bridges, Stephen J. Pearton

Publikováno v: Solid-State Electronics. 42:2269-2276

High-density plasma etching has been an effective patterning technique for the group-III nitrides due to ion fluxes which are 2–4 orders of magnitude higher than more conventional reactive ion etch (RIE) systems. GaN etch rates exceeding 0.68 μ m/

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0451cf05687e52a724990d0b859637ab
https://doi.org/10.1016/s0038-1101(98)00224-x

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Comparison of plasma etch techniques for III–V nitrides

Autor: Stephen J. Pearton, M. M. Bridges, C. R. Abernathy, Randy J. Shul, C. G. Willison, J. W. Lee, G. A. Vawter

Publikováno v: Solid-State Electronics. 42:2259-2267

Fabrication of group-III nitride devices relies on the ability to pattern features to depths ranging from ∼1000 A to >5 μ m with anisotropic profiles, smooth morphologies, selective etching of one material over another and a low degree of plasma-i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a9f0a13743915ae6a83158523a7413bf
https://doi.org/10.1016/s0038-1101(98)00223-8

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Selective inductively coupled plasma etching of group-III nitrides in Cl2- and BCl3-based plasmas

Autor: C. G. Willison, J. W. Lee, Luke F. Lester, M. M. Bridges, J. D. MacKenzie, S. M. Donovan, C. R. Abernathy, Stephen J. Pearton, Randy J. Shul, J. Han, L. Zhang

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:1621-1626

High-density plasma etching has been an effective patterning technique for the group-III nitrides due to ion fluxes which are two to four orders of magnitude higher than more conventional reactive ion etch systems. GaN etch rates exceeding 0.5 μm/mi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::79e98ebe57cf8912709e9937e94f9caa
https://doi.org/10.1116/1.581130

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