Zobrazeno 1 - 10
of 29
pro vyhledávání: '"C. G. Kirkpatrick"'
Publikováno v:
Solid State Communications. 15:1055-1059
The commonly observed 0.970 eV peak in the low-temperature photoluminescence from electron-irradiated Si is strongly suppressed in Ga-doped material. Another important peak at 0.790 eV is inhibited by Al doping. The present results are in conflict wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::598c31af696ef14d9a73f93c680530df
https://doi.org/10.1016/0038-1098(74)90530-4
https://doi.org/10.1016/0038-1098(74)90530-4
Publikováno v:
Radiation Effects. 31:175-179
Silicon produced by float zone, Lopex, or Czochralski growth techniques were ion implanted with various fluences of carbon, oxygen, or both and annealed to examine the substrate and species dependence of the photoluminescence spectra. Other samples i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5a527a06387eb6b9e8242f2c153f3b8
https://doi.org/10.1080/00337577708233274
https://doi.org/10.1080/00337577708233274
Autor:
G. E. Possin, C. G. Kirkpatrick
Publikováno v:
Journal of Applied Physics. 50:3478-3483
A process is described which produces a shallow pn‐junction device with heavy surface doping and very high collection efficiency. Electron‐beam techniques were used to measure collection efficiency as a function of depth and to modulate the surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffd994c2e6994c3ae475bfcd1b711192
https://doi.org/10.1063/1.326342
https://doi.org/10.1063/1.326342
Publikováno v:
Radiation Effects. 30:97-106
Peaks at 0.790, 0.970, 1.018, 1.080, 1.034 and 1.039 eV in the photoluminescence spectra observed from pulled, float zone, and Lopex silicon implanted at room temperature with 150 keV boron and phosphorus ions to fluences from 1012 to 1015 ions/cm2 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64ed4689412c4b07882fce812cadbb89
https://doi.org/10.1080/00337577608233525
https://doi.org/10.1080/00337577608233525
Publikováno v:
Applied Physics Letters. 40:898-901
We observe the infrared absorption spectra associated with a residual 78‐meV acceptor in undoped liquid encapsulated Czochralski GaAs. The acceptor appears to be associated with an intrinsic defect, most likely the antisite GaAs. This acceptor is t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10a16b15f70547d6012a8f24c9a2a6a2
https://doi.org/10.1063/1.92940
https://doi.org/10.1063/1.92940
Publikováno v:
Applied Physics Letters. 25:435-438
Glow discharge optical spectroscopy (GDOS) has been applied to the measurement of impurity profiles in boron‐diffused and ion‐implanted Si samples. The GDOS technique provides a convenient and sensitive probe of boron impurity profiles; results a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15dc5d41136492c61af1c61094766610
https://doi.org/10.1063/1.1655538
https://doi.org/10.1063/1.1655538
Autor:
C. G. Kirkpatrick, G. E. Possin
Publikováno v:
Journal of Applied Physics. 50:4033-4041
An electron‐beam technique for the determination of the minority‐carrier lifetime distribution in semiconductors is described. Because of the short range of low‐energy electrons, it is possible to profile the lifetime distribution in regions co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43199228a68dd61a5e22fe1fcbf77f0c
https://doi.org/10.1063/1.326484
https://doi.org/10.1063/1.326484
Publikováno v:
Journal of Applied Physics. 47:3010-3015
The effects which low‐temperature electron irradiation have on the photoluminescence from Si provide new information regarding irradiation‐induced defects which participate in radiative recombination. Previous identifications of the 0.8–1.0‐e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1cb859b88f35f9f8801bdbb35f29060
https://doi.org/10.1063/1.323044
https://doi.org/10.1063/1.323044
Publikováno v:
Journal of Vacuum Science and Technology. 15:841-844
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eed08082e651d0e1bf177cc34f751238
https://doi.org/10.1116/1.569609
https://doi.org/10.1116/1.569609
Autor:
G. E. Possin, C. G. Kirkpatrick
Publikováno v:
Journal of Vacuum Science and Technology. 16:1917-1920
The lifetime depth distribution in silicon due to Ar ion implantation prior to annealing has been measured. The lifetime is profiled by the quantitative electron‐beam‐induced current technique (QEBIC). For silicon with high P‐doping levels (≳
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4d220e27f8b5f3b5b5ae163fbed20e6
https://doi.org/10.1116/1.570328
https://doi.org/10.1116/1.570328