Zobrazeno 1 - 5
of 5
pro vyhledávání: '"C. G. Almudever"'
Autor:
M. S. Moreira, G. G. Guerreschi, W. Vlothuizen, J. F. Marques, J. van Straten, S. P. Premaratne, X. Zou, H. Ali, N. Muthusubramanian, C. Zachariadis, J. van Someren, M. Beekman, N. Haider, A. Bruno, C. G. Almudever, A. Y. Matsuura, L. DiCarlo
Publikováno v:
npj Quantum Information, Vol 9, Iss 1, Pp 1-7 (2023)
Abstract Artificial neural networks are becoming an integral part of digital solutions to complex problems. However, employing neural networks on quantum processors faces challenges related to the implementation of non-linear functions using quantum
Externí odkaz:
https://doaj.org/article/c6b733651ed3421f812c27499c272c26
Autor:
P. L. Bavdaz, H. G. J. Eenink, J. van Staveren, M. Lodari, C. G. Almudever, J. S. Clarke, F. Sebasatiano, M. Veldhorst, G. Scappucci
Publikováno v:
npj Quantum Information, Vol 8, Iss 1, Pp 1-6 (2022)
Abstract We demonstrate a 36 × 36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The cros
Externí odkaz:
https://doaj.org/article/4488fa652d4d45719bb8a52f40b59f62
Autor:
P. Cadareanu, N. Reddy C, C. G. Almudever, A. Khanna, A. Raychowdhury, S. Datta, K. Bertels, V. Narayanan, M. Di Ventra, P.-E. Gaillardon
Publikováno v:
DATE
Innovative and new computing paradigms must be considered as we reach the limits of von Neumann computing caused by the growth in necessary data processing. This paper provides an introduction to three emerging computing models that have established
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54d16c13ec2a4bd76235ab9cf8dfd676
https://doi.org/10.23919/date.2019.8715167
https://doi.org/10.23919/date.2019.8715167
Publikováno v:
MWSCAS
3T1D-DRAM cells will still be operative with 7nm FinFETs but their performance is significantly degraded when factoring in variability. In order to improve the cell robustness against device process variation and high environment temperatures, we pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fe17c600ce38d37ffba1fd7561be7d5
https://doi.org/10.1109/mwscas.2013.6674590
https://doi.org/10.1109/mwscas.2013.6674590
Publikováno v:
Quantum Science & Technology; Jan2019, Vol. 4 Issue 1, p1-1, 1p