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pro vyhledávání: '"C. Fulk"'
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Autor:
Enrico Bellotti, Marion B. Reine, John Marciniec, P. LoVecchio, S. P. Tobin, C. Fulk, D. D’Orsogna, T. Parodos, F. T. J. Smith, P. Lamarre, J. K. Markunas
Publikováno v:
Journal of Electronic Materials. 38:1746-1754
Dislocations are known to influence the electrical and optical properties of long-wavelength infrared (LWIR) HgCdTe detectors and have been shown to limit the performance of arrays fabricated on heteroepitaxial substrates. To help better understand d
Publikováno v:
Journal of Electronic Materials. 38:1690-1697
We have investigated the glide of strain-relaxing dislocations in closely lattice matched, liquid phase epitaxially (LPE) grown, HgCdTe. A generalized LPE heterostructure was modeled based on secondary-ion mass spectroscopy (SIMS) profile measurement
A Novel Stress Characterization Technique for the Development of Low-Stress Ohmic Contacts to HgCdTe
Autor:
C. Fulk, J. K. Markunas, P. LoVecchio, D. D’Orsogna, Marion B. Reine, Enrico Bellotti, F. T. J. Smith, Paul E. Barbone, P. Lamarre, S. P. Tobin
Publikováno v:
Journal of Electronic Materials. 38:1698-1706
HgCdTe material intended for long-wavelength infrared detection is particularly susceptible to damage from stress. As a result, an ideal ohmic contact needs to have good adhesion and low specific contact resistance. The contact should act as a diffus
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:193-197
The compliance coefficients and Stillinger-Weber interatomic potential parameters of wurtzite InN were determined by first principles methods. The structural parameters of InN were calculated within the local density approximation of Ceperley-Alder a
Autor:
C. Fulk, J. J. Siddiqui, P.Y. Emelie, S. Sivananthan, E. Cagin, Jamie Phillips, James W. Garland
Publikováno v:
Journal of Electronic Materials. 36:841-845
The electrical characteristics of organic (3,4-polyethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) contacts to HgCdTe are studied as a potential alternative to metal/HgCdTe contacts. The use of organic PEDOT:PSS contacts offers the potenti
Autor:
Silviu Velicu, James W. Garland, C. Fulk, S. Sivananthan, L. O. Bubulac, Paul Boieriu, John H. Dinan, Andrew J. Stoltz, C. H. Grein
Publikováno v:
Journal of Electronic Materials. 35:1385-1390
We present extended results on the use of a hydrogen plasma to passivate the effects of defects in long-wave ir HgCdTe/Si. Annealed and as-grown epilayers, in situ doped with indium, were exposed to a hydrogen plasma generated in an electron cyclotro
Autor:
Nibir K. Dhar, S. Sivananthan, Yuanping Chen, C. Fulk, G. Brill, Michael Trenary, R. Singh, Daniel H. Zavitz
Publikováno v:
Journal of Electronic Materials. 35:1449-1454
Silicon (211) has been proposed as an alternative substrate for CdTe/HgCdTe molecular beam epitaxial growth. Silicon has a clear advantage over other substrates because of its low cost, high strength, and thermal-expansion coefficient, which matches
Publikováno v:
Journal of Electronic Materials. 34:704-709
Patterned silicon-on-insulator (SOI) substrates have been proposed to grow low defect density CdTe. The CdTe epilayers so obtained will enable the growth of good-quality mercury cadmium telluride (HgCdTe) layers subsequently. This would increase the
Autor:
John H. Dinan, Daniel H. Zavitz, G. Brill, Robert Sporken, Bikash C. Gupta, Michael Trenary, J. Dumont, S. Sivananthan, C. Fulk
Publikováno v:
Journal of Electronic Materials. 34:846-850
We investigate the properties of arsenic (As) covered Si(211) and Si(311) surfaces by analyzing data from x-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED) images. We then create a model using total surface energy calc