Zobrazeno 1 - 10
of 27
pro vyhledávání: '"C. Ferrandon"'
Autor:
L. Toffanin, J-P. Peltier, G. Simon, V. Puyal, B. Kholti, J-C. Souriau, C. Ferrandon, L. Castagne, G. Waltener, R. Lemaire, T. Lacrevaz
Publikováno v:
2017 IEEE 67th Electronic Components and Technology Conference (ECTC)
2017 IEEE 67th Electronic Components and Technology Conference (ECTC), May 2017, Orlando, United States. pp.623-630, ⟨10.1109/ECTC.2017.331⟩
2017 IEEE 67th Electronic Components and Technology Conference (ECTC), May 2017, Orlando, United States. pp.623-630, ⟨10.1109/ECTC.2017.331⟩
A technological multi-chip module with a large silicon interposer has been designed, manufactured and characterized for space and airborne applications. It stands for a reconfigurable advanced calculation device, for up to 10 Gbps data rate. The elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c192e968cd954cf953dca17d64c83db
https://hal.science/hal-02017756
https://hal.science/hal-02017756
Autor:
G. Imbert, Laetitia Castagne, Gilles Simon, F. Casset, Pascal Chevalier, N. Chevrier, B. Kholti, L. Toffanin, Sébastien Petitdidier, F. Bailly, Jp. Pierrel, D. Mermin, R. Franiatte, C. Ferrandon
Publikováno v:
2016 6th Electronic System-Integration Technology Conference (ESTC).
A mechanical study of silicon interposer bow reduction, from wafer level manufacturing to large die stacking including analytical modeling, is presented in this paper. Indeed, understanding and reducing the warpage of a dissymmetrical substrate is fu
Publikováno v:
International Symposium on Microelectronics. 2012:000233-000238
We present in this paper an alternative Through-Silicon-Via approach that can meet the new requirements of Si package. In this wafer level packaging scheme, a thick silicon interposer (200 to 300μm) is directly reported on a PCB. In 200mm Si wafers,
Autor:
Alexandre Siligaris, Yann Lamy, C. Ferrandon, Cedric Dehos, O. El Bouayadi, Laurent Dussopt, P. Vincent
Publikováno v:
3DIC
A 6.5×6.5 mm2 compact silicon interposer encompassing 2 Tx/Rx antenna, one RF chips, TSV via-last has been designed and fabricated for 60 GHz fast data transmission applications. First characterizations are described in this paper with a focus on re
Autor:
A. Schreiner, Yann Lamy, Sylvain Joblot, Severine Cheramy, C. Ferrandon, Maxime Argoud, A. Jouve, P. Montmeat, Gilles Simon, M. Pellat, Frank Fournel
Publikováno v:
2013 IEEE 63rd Electronic Components and Technology Conference.
This paper is dedicated to the full integration of a new silicone-based material for Molding-Underfilling (MUF) on silicon interposer wafers containing Through Silicon Vias (TSVs) and top dice. The developments were carried out in the frame of “sil
Autor:
J. Roullard, P. Leduc, Grégory Houzet, C. Ferrandon, Cedric Bermond, Thierry Lacrevaz, S. Capraro, Bernard Flechet, Jean Charbonnier, C. Fuchs, Alexis Farcy
Publikováno v:
IEEE 62nd Electronic Components and Technology Conf.
IEEE 62nd Electronic Components and Technology Conf., May 2012, San Diego, United States
IEEE 62nd Electronic Components and Technology Conf., May 2012, San Diego, United States
3D stacking technologies are electrically studied to predict high speed data transmission for memory on logic applications. Maximal frequency of bandwidth for memory-processor and processor-BGA channels are extracted and compared for Face to Face and
Autor:
G. Enyedy, Sergio Pacheco, D. Mercier, Emmanuelle Lagoutte, P. Descours, C. Ferrandon, Charlotte Gillot, M. Pellat, Francois Perruchot, X. Baillin, F. Greco, M. Miller, Nicolas Sillon, M. Cueff, Lianjun Liu, Patrice Rey
Publikováno v:
3rd Electronics System Integration Technology Conference ESTC.
This paper presents a low temperature (
Akademický článek
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Conference
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