Zobrazeno 1 - 3
of 3
pro vyhledávání: '"C. F. Dungen"'
Autor:
Peter Chow, Amir M. Dabiran, Byung Hwan Chu, Yu-Lin Wang, Fan Ren, H. T. Wang, Nancy D. Denslow, K. J. Linthicum, Chih-Yang Chang, Jerry W. Johnson, Kevin J. Kroll, C. F. Dungen, George P. Papadi, E. L. Pine, Barbara J. Sheppard, Chien-Fong Lo, Stephen J. Pearton, James K. Coleman
Publikováno v:
Nanoscience and Nanotechnology Letters. 2:120-128
Autor:
Kevin J. Kroll, James K. Coleman, Jerry W. Johnson, Yu-Lin Wang, George P. Papadi, Amir M. Dabiran, Byung Hwan Chu, Fan Ren, E. L. Pine, Barbara J. Sheppard, C. F. Dungen, K. H. Chen, Stephen J. Pearton, Chih-Yang Chang, Nancy D. Denslow, Chien-Fong Lo, Peter Chow, K. J. Linthicum
Publikováno v:
SPIE Proceedings.
A promising sensing technology utilizing AlGaN/GaN high electron mobility transistors (HEMTs) has been developed to analyze a wide variety of environmental and biological gases and liquids. The conducting 2DEG channel of GaN/AlGaN HEMTs is very close
Autor:
Edwin L. Piner, Yu-Lin Wang, Fan Ren, P. Rajagopal, Barbara J. Sheppard, K. J. Linthicum, John C. Roberts, Stephen J. Pearton, James K. Coleman, Jerry W. Johnson, K. H. Chen, George P. Papadi, Byung Hwan Chu, C. F. Dungen, Tanmay P. Lele, Chih-Yang Chang
Publikováno v:
Applied Physics Letters. 94:243901
Antibody-functionalized, Au-gated AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect Perkinsus marinus. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN/GaN HEMT drain-source current sh