Zobrazeno 1 - 10
of 23
pro vyhledávání: '"C. F. Brucker"'
Autor:
T. W. McDaniel, C. F. Brucker
Publikováno v:
MRS Proceedings. 674
We have carried out a combined experimental and computer simulation study to specify and identify candidate films to support high areal density, thermally-assisted magnetic recording. The motivation of this work is to utilize the enhanced writability
Publikováno v:
Joint International Symposium on Optical Memory and Optical Data Storage.
MO technology is now widely used for erasable optical storage. Almost all MO media products to date are based on rare-earth/transition metal alloys (RE-TM), such as TbFeCo. Although these alloys provide excellent recording performance, their intrinsi
Autor:
C. F. Brucker, T. K. Hatwar
Publikováno v:
Journal of Applied Physics. 79:5704
Co/Pt superlattice films for magneto‐optical recording have a relatively high Curie temperature compared to rare earth‐transition metal films, which has led to criticism of their recording sensitivity at higher disk velocities. We have prepared h
Publikováno v:
Journal of Applied Physics. 53:550-556
A new technique has been developed which directly measures carrier transport through the interfacial region at metal‐semiconductor (M‐S) contacts. The injection current is determined by measuring with fast time resolution the initial rate of deca
Publikováno v:
Surface Science. 59:593-611
Photoemission spectra in the photon energy range 15 eV to 30 eV on clean Ir(100) show considerable dependence of spectral structure on photon energy. In addition, phtoionization cross-sections for the 4σ, 1π and 5σ levels of chemisorbed CO are str
Publikováno v:
Journal of Vacuum Science and Technology. 17:894-898
We have created well‐defined concentrations of surface point defects (oxygen vacancies, Vos) on ZnO(1010) surfaces under controlled UHV conditions and have tested their influence on Schottky barrier formation. ZnO(1010) with and without surface def
Atomic and electronic structure of InP–metal interfaces: A prototypical III–V compound semiconductor
Publikováno v:
Journal of Vacuum Science and Technology. 19:661-666
Soft x‐ray photoemission spectroscopy and electrical measurements of UHV‐cleaved InP–metal interfaces reveal that the interface abruptness on an atomic scale, the stoichiometry of semiconductor diffusion into the metal overlayer, and consequent
Publikováno v:
Physical Review B. 23:5576-5580
It is shown that anodic oxidation of graphite in ${\mathrm{H}}_{2}$S${\mathrm{O}}_{4}$ ultimately leads to creation of C-O covalent bonds which act as carrier scattering centers, degrading the metallic behavior of the intercalation compound. This eff
Publikováno v:
Chemical Reviews. 79:91-137
Publikováno v:
Journal of Vacuum Science and Technology. 20:701-704
The interdiffusion and chemical processes during the in situ (pressure in the 10−10 Torr range) deposition of Cu on cleaved CdS (1120) were investigated by soft‐x‐ray photoemission spectroscopy. The extreme surface sensitivity of this technique