Zobrazeno 1 - 10
of 11
pro vyhledávání: '"C. F. Aliotta"'
Publikováno v:
Journal of The Electrochemical Society. 128:1971-1974
The effects of excess phosphorous on plasma etching of polycrystalline silicon were studied by SEM and TEM. The phosphorous levels were altered by the time duration of deposition, by the presence or absence of a phosphosilicate glass layer during hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33b91492cc4c4c86d64fe3ae07ee8850
https://doi.org/10.1149/1.2127777
https://doi.org/10.1149/1.2127777
Autor:
Maria Ronay, C. F. Aliotta
Publikováno v:
Philosophical Magazine A. 42:161-184
Lead films varying in thickness and grain size were deposited from the vapour onto substrates varying in their coefficient of thermal expansion. This way both the yield stress of the films and the thermal stress arising from temperature change could
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccced5837c578a3129f4a1c494a11aa5
https://doi.org/10.1080/01418618009365808
https://doi.org/10.1080/01418618009365808
Publikováno v:
Journal of Electronic Materials. 4:497-515
Aluminum thin film conductors containing Mg alloying additions have been tested for electromigration failure by formation of electrically open circuits. The test conditions were either 2 × 106 A/cm2 or 4 × 106 A/cm2 for the current density, and eit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cd00821e84225e88374020b90ecb550
https://doi.org/10.1007/bf02666232
https://doi.org/10.1007/bf02666232
Publikováno v:
Thin Solid Films. 93:309-319
An electron-beam-induced voltage (EBIV) technique has been developed to measure the barrier height of Schottky diodes. The principle of this technique is described and is compared with the conventional electron-beam-induced current (EBIC) technique.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2ec0721ef018386122f8f483379ecbb
https://doi.org/10.1016/0040-6090(82)90137-7
https://doi.org/10.1016/0040-6090(82)90137-7
Publikováno v:
Journal of Applied Physics. 53:4919-4927
Thin layers of La, Y, Au, Pd, Pt, Ag, and Sn were evaporated at room temperature as nucleants prior to the evaporation of 2000 A Pb. The correlations of grain size, surface morphology, and the phase diagrams of lead nucleant showed that the grain siz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2958efcaab300eaac53f15d0dd011558
https://doi.org/10.1063/1.331325
https://doi.org/10.1063/1.331325
Autor:
Oliver C. Wells, C. F. Aliotta
Publikováno v:
Scanning. 2:257-259
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa0c15bb078150d5ec1fc2949773ea9a
https://doi.org/10.1002/sca.4950020409
https://doi.org/10.1002/sca.4950020409
Autor:
C. F. Aliotta, G. J. Clark, T. O. Sedgwick, Stephan A. Cohen, Z. A. Weinberg, William A. Lanford, Vaughn R. Deline
Publikováno v:
Applied Physics Letters. 43:1105-1107
During recrystallization of encapsulated silicon films on SiO2, by the graphite strip heater technique, the silicon sometimes breaks apart and agglomerates into small beads or stripes. By secondary ion mass spectroscopy analysis, it was found that a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b99db600bd10ae8a64f8481f744f41d
https://doi.org/10.1063/1.94242
https://doi.org/10.1063/1.94242
Publikováno v:
Applied Physics Letters. 41:54-56
We demonstrate that electron‐beam induced voltage (EBIV) technique can be used for direct measurement of Schottky (or p‐n junction) barrier height. Schottky barrier heights of PtSi, Pd2Si, and TiSi2 on n‐type (111) Si measured by this technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5731157da48f9973e824bc8504f11637
https://doi.org/10.1063/1.93326
https://doi.org/10.1063/1.93326
Autor:
G. E. Brock, C. F. Aliotta
Publikováno v:
IBM Journal of Research and Development. 6:372-374
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4995d6fc0110005d4796269014632066
https://doi.org/10.1147/rd.63.0372
https://doi.org/10.1147/rd.63.0372
Autor:
A. E. Blakeslee, C. F. Aliotta
Publikováno v:
IBM Journal of Research and Development. 14:686-688
Multiple closely spaced layers of GaAs1-xPx, which approximate a one-dimensional crystalline superlattice, have been created by periodically pulsing PH3 into an AsH3-PH3-Ga-HCl vapor-growth apparatus. The phosphorus mole fraction varies between maxim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f217be963d1b2834df7a5dff2163634c
https://doi.org/10.1147/rd.146.0686
https://doi.org/10.1147/rd.146.0686