Intel 4 CMOS Technology Featuring Advanced FinFET Transistors optimized for High Density and High-Performance Computing

Autor: B. Sell, S. An, J. Armstrong, D. Bahr, B. Bains, R. Bambery, K. Bang, D. Basu, S. Bendapudi, D. Bergstrom, R. Bhandavat, S. Bhowmick, M. Buehler, D. Caselli, S. Cekli, Vrsk. Chaganti, Y. J. Chang, K. Chikkadi, T. Chu, T. Crimmins, G. Darby, C. Ege, P. Elfick, T. Elko-Hansen, S. Fang, C. Gaddam, M. Ghoneim, H. Gomez, S. Govindaraju, Z. Guo, W. Hafez, M. Haran, M. Hattendorf, S. Hu, A. Jain, S. Jaloviar, M. Jang, J. Kameswaran, V. Kapinus, A. Kennedy, S. Klopcic, D. Krishnan, J. Leib, Y.-T. Lin, N. Lindert, G. Liu, O. Loh, Y. Luo, S. Mani, M. Mleczko, S. Mocherla, P. Packan, M. Paik, A. Paliwal, R. Pandey, K. Patankar, L. Pipes, P. Plekhanov, C. Prasad, M. Prince, G. Ramalingam, R. Ramaswamy, J. Riley, J. R. Sanchez Perez, J. Sandford, A. Sathe, F. Shah, H. Shim, S. Subramanian, S. Tandon, M. Tanniru, D. Thakurta, T. Troeger, X. Wang, C. Ward, A. Welsh, S. Wickramaratne, J. Wnuk, S. Q. Xu, P. Yashar, J. Yaung, K. Yoon, N. Young

Publikováno v: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::226c1fc04b9265eb60d875c5c1f4a89c
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830194

Low-k interconnect stack with metal-insulator-metal capacitors for 22nm high volume manufacturing

Autor: C. Ege, A. Agrawal, A. Schmitz, A. Kandas, T. Mule, M. Buehler, D. Rao, J. Hicks, P. Parthangal, David Jones, P. Yashar, R. McFadden, Kaizad Mistry, R. Ascazubi, V. Chikarmane, K. S. Lee, N. Speer, J. Roesler, C. Ganpule, Guotao Wang, D. Ingerly, Timothy E. Glassman, R. Grover, A. Blattner, Y. Shusterman, Manvi Sharma, H. Khan, A. Madhavan, N. Lazo, P. Tiwari, P. Hentges, J. Shin, D. Parsons, Sudarshan Rangaraj, H. Liu, B. Choudhury, F. Cinnor

Publikováno v: 2012 IEEE International Interconnect Technology Conference.

We describe interconnect features for Intel's 22nm high-performance logic technology, with metal-insulator-metal capacitors and nine layers of interconnects. Metal-1 through Metal-6 feature a new ultra-low-k carbon doped oxide (CDO) and a low-k etch

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c76256ec386ece7a609902e2d6a446d
https://doi.org/10.1109/iitc.2012.6251663

Consulting in industry: Moving beyond traditional interventions

Autor: Scott C, Ege

Publikováno v: Work (Reading, Mass.). 26(3)

Despite increased efforts to address musculoskeletal disorders (MSDs) in the work place, these injuries continue significantly impact the bottom line financial performance of companies, not to mention the health and safety of their most important res

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::3c3c951ac4c4ebf23ba10c8d21c88a25
https://pubmed.ncbi.nlm.nih.gov/16720963

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Publisher Correction: Laser spectroscopy of the $$^2{\mathrm{S}}_{1/2}{-}^2{\mathrm{P}}_{{1}/2}$$ 2 S 1 / 2 - 2 P 1 / 2 , $$^2{\mathrm{P}}_{3/2}$$ 2 P 3 / 2 transitions in stored and cooled relativistic $${\text{C}}^{3+}$$ C 3 + ions

Autor: D. Winzen, V. Hannen, M. Bussmann, A. Buß, C. Egelkamp, L. Eidam, Z. Huang, D. Kiefer, S. Klammes, Th. Kühl, M. Loeser, X. Ma, W. Nörtershäuser, H.-W. Ortjohann, R. Sánchez, M. Siebold, Th. Stöhlker, J. Ullmann, J. Vollbrecht, Th. Walther, H. Wang, Ch. Weinheimer, D. F. A. Winters

Publikováno v: Scientific Reports, Vol 11, Iss 1, Pp 1-1 (2021)

Externí odkaz: https://doaj.org/article/0930e0a33e504f3eb805540132bff3da