Výsledky vyhledávání - "C. E. Timmering"

Submicron YBa2Cu3O7−δ‐Ag‐YBa2Cu3O7−δsuperconducting proximity junctions

Autor: F.C.M.J.M. van Delft, A. M. Gerrits, C. E. Timmering, A. Slob, M.A.M. Gijs, J. B. Giesbers

Publikováno v: Applied Physics Letters. 59:1233-1235

Using a deep submicron structuring process for oxide superconducting films, we have fabricated planar YBa2Cu3O7−δ‐Ag‐YBa2Cu3O7–δ proximity junctions operating in the liquid nitrogen temperature region. Under microwave radiation Shapiro step

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fdbcbce87a735fa9ad520d1f8c33fdf1
https://doi.org/10.1063/1.105513

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Boron Vapour Phase Doping of Silicon for Bipolar Device Applications

Autor: M. J. J. Theunissen, Y. J. Mergler, J. G. M. van Berkum, C. E. Timmering

Publikováno v: Japanese Journal of Applied Physics. 38:5805

Boron vapour-phase doping (VPD) has been investigated as a possible processing tool for defect-free applications in shallow, vertical and deep junctions in devices. From literature and experiments it has become clear that silicon boride (SiB3) layers

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5cd4bbaec557f04feea6fe9e8b4738c4
https://doi.org/10.1143/jjap.38.5805

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