Zobrazeno 1 - 10
of 122
pro vyhledávání: '"C. E. Stutz"'
Autor:
Albert V. Davydov, J. Boeckl, R. Cortez, Kent L. Averett, J. E. Van Nostrand, John D. Albrecht, C. E. Stutz, Norman A. Sanford
Publikováno v:
Journal of Crystal Growth. 287:500-503
Vertically oriented gallium nitride (GaN) nanocolumns (NCs) approximately 90 ± 10 nm wide and 0.75 μm tall were grown by plasma-assisted molecular beam epitaxy on Al 2 O 3 (00 01) and Si(111). The dense packing of the NCs gives them the appearance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e711df945e60b6dc9a9f578a419d1437
https://doi.org/10.1016/j.jcrysgro.2005.11.073
https://doi.org/10.1016/j.jcrysgro.2005.11.073
Autor:
Alexana Roshko, Youn-Seon Kang, Albert V. Davydov, Igor Levin, Norman A. Sanford, C. E. Stutz, Matthew H. Gray, Alexander J. Shapiro, Lawrence H. Robins, R. Cortez, J. E. Van Nostrand
Publikováno v:
physica status solidi (c). 2:2357-2360
GaN nanorods were grown on c-plane sapphire substrates under N-rich conditions by plasma-assisted molecular-beam epitaxy. Scanning electron microsopy revealed densely packed nanorods of hexagonal cross section with diameters ranging from roughly 40 t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb4e816f556538ab73792222318d5379
https://doi.org/10.1002/pssc.200461602
https://doi.org/10.1002/pssc.200461602
Autor:
C E Stutz, Stephen J. Pearton, Young-Woo Heo, Fan Ren, J. M. Zavada, David C. Look, M. E. Overberg, James Williams, Chennupati Jagadish, Kelly P. Ip, Sergei O. Kucheyev, B. Luo, David P. Norton
Publikováno v:
Solid-State Electronics. 47:2255-2259
Hydrogen is readily incorporated into bulk, single-crystal ZnO during exposure to plasmas at moderate (100–300°C) temperatures. Incorporation depths of >25 μm were obtained in 0.5 h at 300°C, producing a diffusivity of ∼8 × 10−10 cm2/V s at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a861725bdcf4302dbe08ca1f983d89fb
https://doi.org/10.1016/s0038-1101(03)00207-7
https://doi.org/10.1016/s0038-1101(03)00207-7
Autor:
C, Holbrook, Shibalik, Chakraborty, S, Ravindren, P, Boolchand, Jonathan T, Goldstein, C E, Stutz
Publikováno v:
The Journal of chemical physics. 140(14)
We examine variations in the glass transition temperature (T(g)(x)), molar volume (V(m)(x)), and Raman scattering of titled glasses as a function of modifier (BaO) content in the 25%x48% range. Three distinct regimes of behavior are observed; at low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e7e1ad547832ebe31cd6f793e42043b8
https://pubmed.ncbi.nlm.nih.gov/24735304
https://pubmed.ncbi.nlm.nih.gov/24735304
Publikováno v:
Solid State Communications. 117:571-575
Lattice-mismatched epitaxy produces a high concentration of dislocations ( N dis ) in the interface region, and this region is often highly conductive, due to donor ( N D ) decoration of the dislocations. Here we show that a simple postulate, N D =
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83046632df38ff476bb0e2d7bf952406
https://doi.org/10.1016/s0038-1098(01)00010-2
https://doi.org/10.1016/s0038-1098(01)00010-2
Publikováno v:
Physical Review B. 58:7286-7291
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec51037de7c40a2ae247cc3330405868
https://doi.org/10.1103/physrevb.58.7286
https://doi.org/10.1103/physrevb.58.7286
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 2:204-208
We have carried out saturation spectroscopy of cyclotron resonance in a semiconducting InAs/Al 0.5 Ga 0.5 Sb single quantum well using the UCSB free electron laser and have extracted an effective Landau level lifetime using an n -level rate equation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e20063d8b87f60f398ac7039ae65a1d6
https://doi.org/10.1016/s1386-9477(98)00044-7
https://doi.org/10.1016/s1386-9477(98)00044-7
Autor:
Ikai Lo, C. E. Stutz, William C. Mitchel, B. D. McCombe, S.K Singh, Junichiro Kono, Y. J. Wang
Publikováno v:
Physica B: Condensed Matter. :927-931
Far-infrared magneto-transmission studies on two high mobility InAs/AlxGa1−xSb (x=0.1 and 0.2) type-II single quantum wells in magnetic fields up to 30 T show that a magnetic-field-induced semimetal–semiconductor (SM–SC) transition occurs in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b887bf9316a2962624cb76c1b51b94ea
https://doi.org/10.1016/s0921-4526(98)00347-0
https://doi.org/10.1016/s0921-4526(98)00347-0
Autor:
C. E. Stutz, B. Jogai
Publikováno v:
Journal of Electronic Materials. 26:863-867
The effect of parasitic series resistances on electrochemical capacitance-voltage (EC-V) profiling is simulated numerically for AlxGaj1-xAs/InyGa1-yAs pseudomorphic high electron mobility transistor (p-HEMT) structures. The actual EC-V measurement is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0669fc6f3682bc1e9e1f37afbaf1e44
https://doi.org/10.1007/s11664-997-0264-8
https://doi.org/10.1007/s11664-997-0264-8
Publikováno v:
Physical Review B. 55:1617-1636
We present results of a detailed far-infrared magneto-optical study on a series of high-mobility InAs/${\mathrm{Al}}_{\mathrm{x}}$ ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$ Sb (x=1.0, 0.8, 0.5, 0.4, 0.2, and 0.1) type-II single quantum wel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c00a549ec87e9dee1fc61688fe5b41e
https://doi.org/10.1103/physrevb.55.1617
https://doi.org/10.1103/physrevb.55.1617