Zobrazeno 1 - 10
of 46
pro vyhledávání: '"C. E. Nebel"'
Publikováno v:
physica status solidi (a). 203:3273-3298
A comprehensive summary of surface electronic properties of undoped hydrogen terminated diamond covered with adsorbates or in electrolyte solutions is given. The formation of a conductive layer at the surface is characterized using Hall effect, condu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca53e402d335e231572541fc1ff0d6d7
https://doi.org/10.1002/pssa.200671401
https://doi.org/10.1002/pssa.200671401
Autor:
Daisuke Takeuchi, Bohuslav Rezek, Hideyuki Watanabe, T. Yamamoto, C. E. Nebel, Hiromitsu Kato, Dongchan Shin
Publikováno v:
Diamond and Related Materials. 15:264-268
The electronic properties of hydrogen terminated intrinsic single crystalline CVD diamond in redox–electrolytic solutions are characterized by cyclic voltammetry experiments and pH-sensitive measurements of ion-sensitive field effect transistor (IS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d66e1d70e65590a14078d476e9341d67
https://doi.org/10.1016/j.diamond.2005.08.012
https://doi.org/10.1016/j.diamond.2005.08.012
Publikováno v:
Diamond and Related Materials. 13:2031-2036
Hydrogen-terminated diamond films have been investigated by Contact Potential Difference Measurements (CPD or Kelvin force), Hall effect experiments and theoretical calculations where the Schrodinger and Poisson equations have been solved to calculat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dde1e559f63b254ec7cc1c8e73a66cc
https://doi.org/10.1016/j.diamond.2004.06.028
https://doi.org/10.1016/j.diamond.2004.06.028
Publikováno v:
physica status solidi (a). 201:2432-2438
Hydrogen-terminated diamond films have been investigated by Contact Potential Difference Measurements (CPD or Kelvin force), Hall-effect experiments and theoretical calculations where the Schrodinger and Poisson equations have been solved to calculat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::629adc4884a812c3a5cf0ec9e8d4f88c
https://doi.org/10.1002/pssa.200405185
https://doi.org/10.1002/pssa.200405185
Autor:
Martin Eickhoff, Martin Stutzmann, G. Vogg, Jose A. Garrido, C. E. Nebel, C. R. Miskys, M. Hermann
Publikováno v:
Applied Physics Letters. 85:3699-3701
Two practically fully relaxed AlN domains were identified by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships (0001)[101¯0] AlNI‖(100)[011] diamond for the predominant AlN domain (type I) and (0001)[1¯2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd35bcb122771a0b673f9fee2d686726
https://doi.org/10.1063/1.1811382
https://doi.org/10.1063/1.1811382
Autor:
C. Sauerer, Bohuslav Rezek, Lothar Ley, E. Snidero, C. E. Nebel, Philippe Bergonzo, Jürgen Ristein, Martin Stutzmann
Publikováno v:
Applied Physics Letters. 82:2266-2268
Atomic force microscopy and Kelvin probe experiments are applied to characterize hydrogen terminated patterns contacted with gold and aluminum on (100) diamond surfaces. On hydrogen terminated diamond the work function of 4.9 eV is detected, with an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3e81a03b942e5b3a77f9256368d3340
https://doi.org/10.1063/1.1564293
https://doi.org/10.1063/1.1564293
Autor:
Jose A. Garrido, Oliver Ambacher, Martin Stutzmann, Martin Eickhoff, C. E. Nebel, C. R. Miskys, M. Hermann
Publikováno v:
Applied Physics Letters. 82:290-292
An aluminum nitride/diamond p–n heterojunction has been realized by plasma-induced molecular-beam epitaxy growth of AlN on (100) diamond. The epitaxial nature of this heterojunction has been confirmed by high-resolution x-ray diffraction. The silic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fb933bddefa0199c179d8e964965d64
https://doi.org/10.1063/1.1532545
https://doi.org/10.1063/1.1532545
Publikováno v:
Philosophical Magazine B. 69:291-306
Thermodynamic equilibrium of doped hydrogenated amorphous Si (a-Si: H) is explored using dark-conductivity measurements of small thermal perturbations. Raising the temperature increases the electron and hole densities owing to the activation of addit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bb234e78000a8649a9ae039ccbc5790
https://doi.org/10.1080/01418639408240110
https://doi.org/10.1080/01418639408240110
Autor:
R. A. Street, C. E. Nebel
Publikováno v:
Journal of Non-Crystalline Solids. :449-452
Hall data obtained on intrinsic, phhosphorus and boron doped a-Si:H and a-SiC:H in the temperature regime 200 K ⩽ T ⩽ 400 K are introduced and discussed. The data confirm double sign anomaly. The Hall mobilities, μ H , are significantly smaller
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f22a69e10c9341de8b83cae23e259f5
https://doi.org/10.1016/0022-3093(93)90586-m
https://doi.org/10.1016/0022-3093(93)90586-m
Publikováno v:
Journal of Non-Crystalline Solids. :203-206
Thermodynamic equilibrium kinetics of phosphorus (P) and boron (B) doped hydrogenated amorphous silicon (a-Si:H) are explored using dark conductivity measurements. Small variations in temperature of the semiconductor cause variations in active dopant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::365618c3a94645331a7b09e2b581a1ce
https://doi.org/10.1016/0022-3093(93)90526-4
https://doi.org/10.1016/0022-3093(93)90526-4