Zobrazeno 1 - 10
of 1 480
pro vyhledávání: '"C. E. Nebel"'
Autor:
Fernandez‐Yague, Marc A.1,2 (AUTHOR) m.fernandez-yague@qmul.ac.uk, Palma, Matteo2 (AUTHOR), Tofail, Syed A. M.3 (AUTHOR), Duffy, Maeve1 (AUTHOR), Quinlan, Leo R.1 (AUTHOR), Dalby, Mathew J.4 (AUTHOR), Pandit, Abhay1 (AUTHOR), Biggs, Manus J.1 (AUTHOR)
Publikováno v:
Advanced Science. 12/4/2024, Vol. 11 Issue 45, p1-18. 18p.
Publikováno v:
physica status solidi (a). 203:3273-3298
A comprehensive summary of surface electronic properties of undoped hydrogen terminated diamond covered with adsorbates or in electrolyte solutions is given. The formation of a conductive layer at the surface is characterized using Hall effect, condu
Autor:
Daisuke Takeuchi, Bohuslav Rezek, Hideyuki Watanabe, T. Yamamoto, C. E. Nebel, Hiromitsu Kato, Dongchan Shin
Publikováno v:
Diamond and Related Materials. 15:264-268
The electronic properties of hydrogen terminated intrinsic single crystalline CVD diamond in redox–electrolytic solutions are characterized by cyclic voltammetry experiments and pH-sensitive measurements of ion-sensitive field effect transistor (IS
Publikováno v:
Diamond and Related Materials. 13:2031-2036
Hydrogen-terminated diamond films have been investigated by Contact Potential Difference Measurements (CPD or Kelvin force), Hall effect experiments and theoretical calculations where the Schrodinger and Poisson equations have been solved to calculat
Publikováno v:
physica status solidi (a). 201:2432-2438
Hydrogen-terminated diamond films have been investigated by Contact Potential Difference Measurements (CPD or Kelvin force), Hall-effect experiments and theoretical calculations where the Schrodinger and Poisson equations have been solved to calculat
Autor:
Suman S; CSIR-Institute of Minerals and Materials Technology, Bhubaneswar, 751013, India.; Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002, India., Sharma DK; Institute of Physics of the Czech Academy of Sciences, Prague, 16200, Czech Republic., Szabo O; Institute of Physics of the Czech Academy of Sciences, Prague, 16200, Czech Republic., Rakesh B; CSIR-Institute of Minerals and Materials Technology, Bhubaneswar, 751013, India.; Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002, India., Marton M; Institute of Electronics and Photonics, Slovak University of Technology, Bratislava, 81219, Slovakia., Vojs M; Institute of Electronics and Photonics, Slovak University of Technology, Bratislava, 81219, Slovakia., Sankaran KJ; CSIR-Institute of Minerals and Materials Technology, Bhubaneswar, 751013, India.; Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002, India., Kromka A; Institute of Physics of the Czech Academy of Sciences, Prague, 16200, Czech Republic.
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Dec 15, pp. e2407514. Date of Electronic Publication: 2024 Dec 15.
Autor:
Li C; Institute of Materials Engineering, University of Siegen, 57076, Siegen, Germany., Jiang X; Institute of Materials Engineering, University of Siegen, 57076, Siegen, Germany., Yang N; Department of Chemistry, Hasselt University, Diepenbeek, 3590, Belgium.; IMO-IMOMEC, Hasselt University, Diepenbeek, 3590, Belgium.
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Dec; Vol. 20 (50), pp. e2400798. Date of Electronic Publication: 2024 Sep 28.
Autor:
Martin Eickhoff, Martin Stutzmann, G. Vogg, Jose A. Garrido, C. E. Nebel, C. R. Miskys, M. Hermann
Publikováno v:
Applied Physics Letters. 85:3699-3701
Two practically fully relaxed AlN domains were identified by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships (0001)[101¯0] AlNI‖(100)[011] diamond for the predominant AlN domain (type I) and (0001)[1¯2
Autor:
C. Sauerer, Bohuslav Rezek, Lothar Ley, E. Snidero, C. E. Nebel, Philippe Bergonzo, Jürgen Ristein, Martin Stutzmann
Publikováno v:
Applied Physics Letters. 82:2266-2268
Atomic force microscopy and Kelvin probe experiments are applied to characterize hydrogen terminated patterns contacted with gold and aluminum on (100) diamond surfaces. On hydrogen terminated diamond the work function of 4.9 eV is detected, with an
Autor:
Jose A. Garrido, Oliver Ambacher, Martin Stutzmann, Martin Eickhoff, C. E. Nebel, C. R. Miskys, M. Hermann
Publikováno v:
Applied Physics Letters. 82:290-292
An aluminum nitride/diamond p–n heterojunction has been realized by plasma-induced molecular-beam epitaxy growth of AlN on (100) diamond. The epitaxial nature of this heterojunction has been confirmed by high-resolution x-ray diffraction. The silic