Zobrazeno 1 - 10
of 71
pro vyhledávání: '"C. E. C. Wood"'
Publikováno v:
Journal of Applied Physics. 88:3295-3300
We have measured high resolution thermal conductivity (κ) and Raman spectra {E2 mode [high frequency], A1 mode [longitudinal optical (LO)], and high frequency LO-plasmon coupled mode [LPP+]} at 300 K of three series of n-GaN/sapphire (0001) samples
Publikováno v:
Physical Review B. 61:8256-8261
Publikováno v:
Journal of Materials Science Materials in Electronics. 8:109-113
Etched V-grooves on (1 0 0) gallium arsenide crystal surfaces produced using various compositions of bromine-in-methanol etchant are bounded by sidewall surfaces, presumably of Ga atoms, aligned along the original {7 6 6} position of the bulk crystal
Publikováno v:
Materials Science and Engineering: A. :184-188
We studied the photoluminescence in GaAs/AlGaAs single quantum wells at fields up to a maximum of 22 T and observed spectra due to impurities, heavy-hole excitons, and Landau levels. The wells were doped with Si at different doping levels up to 3 ×
Autor:
C. E. C. Wood, F. G. Johnson
Publikováno v:
Journal of Applied Physics. 78:4444-4448
The dynamic equilibrium between P2, As2, and AsP at 1000 °C has been studied by mass spectrometry of fluxes from a double effusion cell. From simple ion gauge measurements of heated and unheated fluxes we determined the ionization efficiency for the
Autor:
N. K. Dhar, C. E. C. Wood
Publikováno v:
Journal of Applied Physics. 78:4463-4466
When annealed, thin amorphous deposits of highly lattice mismatched materials provide specular crystalline surfaces for epitaxy. Mismatch strain is predominantly relieved by misfit dislocations propagating in the plane of the interface, so that resul
Autor:
F. G. Johnson, C. E. C. Wood
Publikováno v:
Journal of Applied Physics. 78:1664-1668
The transient behavior of the flux from a valved effusion cell containing red phosphorus is shown to result from a low elemental sublimation coefficient (α=1.3×10−7) and not from the presence of white phosphorus in the sublimator region. The crit
Publikováno v:
Journal of Applied Physics. 76:2197-2201
Incorporation of arsenic in molecular‐beam epitaxial germanium depends upon the specific surface reconstruction. When both gallium and arsenic are incident on the surface during growth, incorporation of both species follow each other in magnitude a
Publikováno v:
Physica Status Solidi (a). 125:255-262
A detailed analysis of electron beam and rapid optical furnace annealing of AuGe/Ni ohmic contacts is reported. Although the lowest contact resistance values obtained by both techniques are similar, surface topography is always better for E beam anne