Zobrazeno 1 - 10
of 84
pro vyhledávání: '"C. Dhanavantri"'
Publikováno v:
Optik. 166:61-68
This study provides the optimized picture of multi quantum well (MQW) solar cell using Brennan method and Schrodinger equation. MQW solar cell is optimized by varying some parameters such as Indium composition of the ‘well’ and ‘barrier’; ban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffbf35e48fb947bc138e05d29d364d30
https://doi.org/10.1016/j.ijleo.2018.04.008
https://doi.org/10.1016/j.ijleo.2018.04.008
Publikováno v:
Optics & Laser Technology. 95:165-171
In this paper, the p-side down vertical InGaN/GaN blue light-emitting diodes with different geometric patterns of n-electrodes of chip sizes of 300 × 300 µm2, 500 × 500 µm2 and 1000 × 1000 µm2 have been optimized for achieving a uniform distrib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50f0b032150f9929f318a34cd7792264
https://doi.org/10.1016/j.optlastec.2017.05.002
https://doi.org/10.1016/j.optlastec.2017.05.002
Publikováno v:
Journal of Computational Electronics. 15:1040-1045
The performance of InGaN/GaN light-emitting diodes (LEDs) with multiple-quantum-well barriers formed from alternating p- and undoped regions is compared with that of reference devices having similar epilayer structure but with barriers formed from al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7aa02b46a1c3b7029b218a6fc09b2b2
https://doi.org/10.1007/s10825-016-0838-x
https://doi.org/10.1007/s10825-016-0838-x
Publikováno v:
Superlattices and Microstructures. 92:366-373
Understanding the physics of charge carrier transport at graphene/p-GaN interface is critical for achieving efficient device functionality. Currently, the graphene/p-GaN interface is being explored as light emitting diodes, however this interface can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e12010050f1111de2ba1965e31aa64ab
https://doi.org/10.1016/j.spmi.2016.02.033
https://doi.org/10.1016/j.spmi.2016.02.033
Publikováno v:
Superlattices and Microstructures. 89:89-96
In this paper we report an optimised pattern of surface textured graphene current spreading layer (CSL) for the enhancement of light extraction efficiency (LEE) in InGaN/GaN vertical light emitting diodes (V-LEDs). It is found that by texturing graph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f8c870a5bfab6bb5c927eb874f544b0
https://doi.org/10.1016/j.spmi.2015.11.007
https://doi.org/10.1016/j.spmi.2015.11.007
Publikováno v:
Superlattices and Microstructures. 86:86-94
This study analyzes the current spreading effect of graphene on lateral and vertical light emitting diodes (LEDs). We observe an improvement in uniformity of current distribution, light output power and wall-plug efficiency in lateral LEDs (L-LEDs) w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80b2af40a5798cb4d052b06b251f9afd
https://doi.org/10.1016/j.spmi.2015.07.029
https://doi.org/10.1016/j.spmi.2015.07.029
Publikováno v:
Applied Physics A. 118:1459-1468
The photovoltaic behaviour of metal/n-InGaN Schottky junction solar cells with low- and high-level injection conditions are explored by using voltage model. Four metals Ni–Au, Ni, Au and Pt are used as Schottky contact with n-InGaN and Schottky jun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e54d09e86fadb513781f126a57e4b0e0
https://doi.org/10.1007/s00339-014-8910-5
https://doi.org/10.1007/s00339-014-8910-5
Publikováno v:
Optical and Quantum Electronics. 47:1117-1126
The effect of indium compositional grading on the performance of $$\hbox {p-GaN/i}\hbox {-}\hbox {In}_\mathrm{x}\hbox {Ga}_{1-\mathrm{x}}\hbox {N/GaN}$$ solar cell has been investigated using TCAD Silvaco. An enhancement in efficiency of almost two t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec724b8cff1a0292602da4ac2865cce2
https://doi.org/10.1007/s11082-014-9968-1
https://doi.org/10.1007/s11082-014-9968-1
Autor:
Ashok Kumar Lunia, Suchandan Pal, Sandeep Kumar, Amit Kumar Goyal, Rubina Get, C. Dhanavantri, Sumitra Singh
Publikováno v:
Optik. 126:3004-3006
Light extraction of InGaN/GaN based surface-patterned vertical blue light emitting diodes (LEDs) is investigated by the use of ray-tracing approach. To optimize the light extraction efficiency of LEDs, various types of facet-patterning have been intr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62360c06721e371c63d8b68ecf5d469e
https://doi.org/10.1016/j.ijleo.2015.07.086
https://doi.org/10.1016/j.ijleo.2015.07.086
Autor:
Bhoopendra Kumar Kushwaha, Saroj Kanta Patra, C. Dhanavantri, Kuldip Singh, Priyavart Parjapat, Ashok Chauhan, Suchandan Pal, Pawan Kumar, Sumitra Singh, Sonachand Adhikari, Sandeep Kumar, Ashok Kumar Lunia
Publikováno v:
Journal of Applied Mathematics and Physics. :1113-1117
GaN/InGaN based violet light emitting diodes (LEDs), emitting at 430 nm, have been grown on conventional single side polished (SSP) and patterned sapphire substrates (PSS). Characteristics of the epitaxial wafers and subsequently fabricated LEDs have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e743ef83ba56dcedb3e4361a5112bd1
https://doi.org/10.4236/jamp.2014.212129
https://doi.org/10.4236/jamp.2014.212129