Zobrazeno 1 - 10
of 60
pro vyhledávání: '"C. Deville Cavellin"'
Autor:
A Scheriau, C Deville-Cavellin
Publikováno v:
BHM Berg- und Hüttenmännische Monatshefte. 161:27-33
Since the end of 2007, UGITECH S.A. has been equipped with an ESRR™ plant provided by INTECO Special Melting Technologies GmbH. This technology uses a superheated slag to remelt electrodes, in a T-shaped mould equipped with an upper graphite curren
Publikováno v:
Superconductor Science and Technology. 18:1437-1440
An alternative simple method is proposed for analysing the scaling properties of the high-Tc superconductor cuprates. The temperature is rescaled with a parameter TR determined from the precise analysis of RH(1/T), where RH is the Hall coefficient, i
Autor:
C. Deville Cavellin, H. El Alami
Publikováno v:
Journal of Crystal Growth. 277:170-174
We describe, here the growth, the structural and the electric properties of BiSrCaCuO compounds, where the same deposition sequence is used as for Bi-2212 with a single modification: the decrease of the bismuth deposition time in a wide range. It is
Publikováno v:
Microelectronic Engineering. 76:113-118
Copper thin films were grown on SiO2 substrates by chemical vapor deposition using the precursor (MHY)Cu(hfac) and were examined by scanning electron microscopy. The affinity for copper chemical vapor deposition of the substrate surface is higher aft
Publikováno v:
Physica C: Superconductivity. 406:131-136
BiSrCaCuO thin films were grown on (1 0 0) SrTiO3 substrates by molecular beam epitaxy (MBE) with variation of the Bi deposition time. A new 2x212 family with x varied between 1 and 0 was grown. The X-ray study, the Rutherford back scattering (RBS),
Publikováno v:
Physica C: Superconductivity. 329:231-242
BiSrCaCuO thin films and specially Bi-2212 compounds were grown on (100) SrTiO 3 substrates by molecular beam epitaxy (MBE). The growth mechanism was controlled in real time by monitoring the RHEED intensity. The deposition sequence of the elements w
Autor:
C. Deville Cavellin, C.F. Beuran, C. Partiot, B. Eustache, Jean-Baptiste Moussy, J.Y. Laval, Michel Laguës, X.Z. Xu
Publikováno v:
Physica C: Superconductivity. :162-165
Thin films belonging to the family of Spin Ladders (Sr,Ca) h−1 Cu h+1 O 2h are grown by MBE. The deposition is performed under atomic oxygen using real time control by the RHEED intensity. The structural parameters measured by four-circle X-ray dif
Autor:
C. Coussot, C. Deville Cavellin, A. Taleb, H. Adrian, X. M. Xie, G. Indlekofer, Michel Laguës, V. Mairet, B. Eustache, Patrick Wagner, F. C. Beuran, X. Z. Xu, C. Hatterer
Publikováno v:
Physica C: Superconductivity. 261:153-156
We present angular resolved photoemission spectroscopy measurements about the Fermi surface of a Bi 2 Sr 2 CaCu 2 O 8+δ (Bi2212) thin film. Dispersion curves in two directions are discussed. It is confirmed that the Fermi surface observed on the Bi2
Publikováno v:
Journal of nanoscience and nanotechnology. 11(10)
We report 3C-SiC nano-crystals synthesis by thermal annealing of SiO2/Si wafers in CO2 gas. The nano-crystals have been characterized using scanning electron microscopy and atomic force microscopy. These results are correlated with selective area ele
Autor:
Geetanjali Deokar, S. Steydli, C. Deville Cavellin, Fausto Sirotti, Mathieu G. Silly, M. D'angelo, A. Pongrácz, B. Pécz
Publikováno v:
Surface Science
Surface Science, Elsevier, 2012, 606 (7-8), pp.697-701. ⟨10.1016/j.susc.2011.12.006⟩
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2012, 606 (7-8), pp.697-701. ⟨10.1016/j.susc.2011.12.006⟩
Surface Science, Elsevier, 2012, 606 (7-8), pp.697-701. ⟨10.1016/j.susc.2011.12.006⟩
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2012, 606 (7-8), pp.697-701. ⟨10.1016/j.susc.2011.12.006⟩
International audience; We have studied CO interaction with SiO2/Si system at high temperature (similar to 1100 degrees C) and 350 mbar by corelevel photoemission. Even for short annealing time (5 min) the signal from Si2p and C1s core levels shows a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::276cbbae0bddcea5a0ce5d70a2337ac3
https://hal.archives-ouvertes.fr/hal-01237475
https://hal.archives-ouvertes.fr/hal-01237475