Zobrazeno 1 - 10
of 51
pro vyhledávání: '"C. Delamarre"'
Publikováno v:
Philosophical Magazine
Philosophical Magazine, Taylor & Francis, 2006, 86 (15), pp.2151-2161. ⟨10.1080/14786430600640478⟩
Philosophical Magazine, Taylor & Francis, 2006, 86 (15), pp.2151-2161. ⟨10.1080/14786430600640478⟩
International audience; Germanium quantum dots were grown by Ultra High Vacuum Chemical Vapour Deposition on {100} silicon substrate. Two types of heterostructures were studied: single islands randomly grown on silicon as well as stacking islands gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bb3ce3739b7905df94f5500d912b312
https://doi.org/10.1080/14786430600640478
https://doi.org/10.1080/14786430600640478
Autor:
Soazig C. Delamarre, Carl A. Batt
Publikováno v:
Applied Microbiology and Biotechnology. 71:668-679
Recombinant strains of Wautersia eutropha expressing an artificial polyhydroxyalkanoate (PHA) biosynthesis operon under the control of different native promoters linked to polyhydroxybutyrate (PHB) (P(phb)), acetoin (P(acoE), P(acoD), and P(acoX)) or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b2bc8f73aae7b797c34e97618e189d6
https://doi.org/10.1007/s00253-005-0217-1
https://doi.org/10.1007/s00253-005-0217-1
Publikováno v:
Applied Microbiology and Biotechnology. 69:293-303
A Pseudomonas strain, 3Y2, that produced polyhydroxyalkanoate (PHA) polymers consisting of 3-hydroxybutyric acid (3HB) and medium-chain-length 3-hydroxyalkanoate (mcl-HA) units, with up to 30% 3HB, was isolated. Two PHA biosynthesis loci (pha ( Ps-1)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05c0080c0865d3116912f792716bc751
https://doi.org/10.1007/s00253-005-0020-z
https://doi.org/10.1007/s00253-005-0020-z
Publikováno v:
Microscopy and Microanalysis. 8:312-318
The continuous displacement field within elastically relaxed GaInAs islands was calculated from digitized HREM images of {110} cross sections of In0.35Ga0.65As layers grown on GaAs by molecular beam epitaxy. Experimental maps of the deformations para
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e70fa1fc4376c55a01a635d3b7515116
https://doi.org/10.1017/s1431927602020251
https://doi.org/10.1017/s1431927602020251
Publikováno v:
Applied and Environmental Microbiology. 67:1445-1452
Genetic and biochemical evidence for a defective xylan degradation pathway was found linked to the xylose operon in three lactococcal strains, Lactococcus lactis 210, L. lactis IO-1, and L. lactis NRRL B-4449. Immediately downstream of the xylulose k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c531cc1c9586ac6dfee2c690be24664c
https://doi.org/10.1128/aem.67.4.1445-1452.2001
https://doi.org/10.1128/aem.67.4.1445-1452.2001
Publikováno v:
Journal of Applied Physics. 86:1988-1993
Lattice distortions in three-dimensional coherent In0.35Ga0.65As islands grown by molecular beam epitaxy at 510 °C on GaAs have been imaged by high resolution electron microscopy. The strain fields are determined from the corresponding digital image
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc8cbc772981a363745fbb6814525398
https://doi.org/10.1063/1.370998
https://doi.org/10.1063/1.370998
Publikováno v:
Materials Science Forum. :649-652
The 2D-3D transition of the growth mode of highly strained In x Ga 1-x As layers on {100} GaAs was observed by HREM. Local deformations were measured by image processing of HREM {110} projections. e x and e z deformation mappings of In x Ga 1-x As is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23864da7d3f890dafaf0a253b97cdfe1
https://doi.org/10.4028/www.scientific.net/msf.294-296.649
https://doi.org/10.4028/www.scientific.net/msf.294-296.649
Publikováno v:
Philosophical Magazine Letters. 77:249-256
During the epitaxy of highly strained InXGa1-XAs (x> 0.25) on {100}- oriented GaAs, a two-dimensional (2D)-three-dimensional transition of the growth mode was observed with formation of coherent islands. Deformations at the atomic scale were measured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::225db52a08caf4c2861b9128f5fd5caf
https://doi.org/10.1080/095008398178381
https://doi.org/10.1080/095008398178381
Publikováno v:
Journal of Crystal Growth. 177:6-16
The 2D–3D transition occurring in highly strained GaAsGa1 - xInxAs heterostructures growns by MBE was analyzed by specific TEM techniques and correlated to photoluminescence data. HREM evidences that the transition always happens in a standard grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23952ec4bcd620a382404c68f8a9f72e
https://doi.org/10.1016/s0022-0248(96)01071-8
https://doi.org/10.1016/s0022-0248(96)01071-8
Publikováno v:
Journal of Crystal Growth. 169:209-216
The evolution of surface roughness and the subsequent plastic relaxation mechanisms have been studied by TEM (transmission electron microscopy) as a function of the thickness of highly strained In0.30Ga0.70As layers on GaAs (001). The following stage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9894b06297e3f7193db6d574222cbc1c
https://doi.org/10.1016/s0022-0248(96)00384-3
https://doi.org/10.1016/s0022-0248(96)00384-3