Zobrazeno 1 - 10
of 80
pro vyhledávání: '"C. Daguet"'
Publikováno v:
ACM MMSys
ACM MMSys, Mar 2014, Singapore, Singapore. pp.7-12
MMSys
ACM MMSys, Mar 2014, Singapore, Singapore. pp.7-12
MMSys
Ultra High Definition video is entering a phase of deployment tests, with first UHD services being launched in late 2013. Most on-air broadcast UHD services will not start until 4K display market penetration is high enough, which will not happen unti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f64a6dc8278e012cabd67201c8be66f
https://hal.telecom-paris.fr/hal-02412057
https://hal.telecom-paris.fr/hal-02412057
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:1174-1181
Etching of InGaAs and InP in inductively coupled plasma (ICP) using SiCl4 was studied for heterojunction bipolar transistor (HBT) applications. Low sample temperature was used to minimize etching isotropy and to reduce group V element desorption. The
Autor:
E. Guillonneau, J. Flicstein, J. L. Courant, C Daguet, Jean Francois Palmier, S. Pata, L.S Kee Chun
Publikováno v:
Applied Surface Science. :394-400
A solid-on-solid (SOS) model to simulate SiN:H dynamic surface characteristics in ultraviolet chemical vapor deposition (CVD) onto indium phosphide is presented. It is recognized that the nucleation process occurs at an UV induced active charged cent
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:626-632
We report on the sidewall and surface characterization of InP etched patterns obtained by inductively coupled plasma (ICP). The fabrication of InP based optoelectronic integrated circuits requires dry etching processes, normally using CH4/H2 gas mixt
Publikováno v:
IEEE Transactions on Applied Superconductivity. 3:1190-1193
The in-plane ( rho /sub ab/) and out-of-plane ( rho /sub c/)/sub c/ resistivities were measured above the critical temperature, T/sub c/, in several lead-substituted single crystals of Bi/sub 2/Sr/sub 2/CaCu/sub 2/O/sub 8+y/ and compared to the resul
Publikováno v:
Applied Superconductivity. 1:627-634
We show that lead-substitution in single crystals of Bi2Sr2CaCu2O8+y induces a decrease of both the structural and resistivity anisotropies. In the first place we have found that lead substitution can reduce the resistivity anisotropy ρcρab by two
Akademický článek
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Autor:
J. F. Scott, J. Chavignon, C. Daguet, J. Schneck, J. Sapriel, J. C. Tolédano, L. Pierre, H. Boyer, J. P. Chaminade
Publikováno v:
Physical Review B. 43:6259-6262
We report the Raman spectra of chemically characterized (${\mathrm{Bi}}_{2\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Pb}}_{\mathit{x}}$)${\mathrm{Sr}}_{2}$${\mathrm{CaCu}}_{2}$${\mathrm{O}}_{8+\mathit{y}}$ single crystals for 0x0.4. Significant mod
Publikováno v:
Journal of Applied Physics. 68:2296-2303
We have systematically investigated the influence of the three parameters (temperature of sintering, lead content, and duration of the sintering) on the growth of the (2:2:2:3) phase in ceramics of nominal composition Bi2−xPbxSr2Ca2Cu3O10−x/2, an