Zobrazeno 1 - 10
of 64
pro vyhledávání: '"C. Dachs"'
Autor:
C. Dachs
Publikováno v:
e & i Elektrotechnik und Informationstechnik. 122:466-471
Near Field Communication (NFC) is opening-up completely new perspectives for the mobile communication industry. It enables contactless peer-to-peer communication, reading/writing of contactless cards and, when combined with a smart card IC, emulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0fa4c8204fe6f87efd93b9a5e163fd7
https://doi.org/10.1007/bf03054380
https://doi.org/10.1007/bf03054380
Autor:
J. Garnier, J.-M. Palau, C. Sudre, C. Detcheverry, J. Gasiot, Eric Lorfevre, Robert Ecoffet, C. Dachs, M.-C. Calvet
Publikováno v:
IEEE Transactions on Nuclear Science. 45:1624-1627
Heavy ion induced burnout is reported, for the first time, in different parts of a VIP. A 2D-simulation investigation allows a better understanding of this phenomenon and shows the importance of the epi-substrate junction parameters in the SEB occurr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b64a1bae36c2efba2669ca6cc3e871c
https://doi.org/10.1109/23.685250
https://doi.org/10.1109/23.685250
Autor:
Eric Lorfevre, C. Dachs, Robert Ecoffet, C. Detcheverry, M.-C. Calvet, J.-M. Palau, J. Gasiot, F. Roubaud
Publikováno v:
IEEE Transactions on Nuclear Science. 44:2353-2357
Heavy ion induced destructive failures are reported in N-channel power IGBTs. For the first time, an experimental and 2D simulation investigation shows that latchup is involved in the triggering of the device.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5032cfcecb7d6532e6095757ebec398c
https://doi.org/10.1109/23.659061
https://doi.org/10.1109/23.659061
Autor:
C. Detcheverry, C. Dachs, J.-M. Palau, C. Sudre, Robert Ecoffet, Eric Lorfevre, G. Bruguier, J. Gasiot
Publikováno v:
IEEE Transactions on Nuclear Science. 44:2266-2273
This work presents SEU phenomena in advanced SRAM memory cells. Using mixed-mode simulation, the effects of scaling on the notions of sensitive area and critical charge is shown. Specifically, we quantify the influence of parasitic bipolar action in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::495df029460ae84cf44bf1c25043494a
https://doi.org/10.1109/23.659045
https://doi.org/10.1109/23.659045
A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs
Autor:
C. Dachs, Kenneth F. Galloway, Jeffrey L. Titus, C.F. Wheatley, M. Allenspach, G.H. Johnson, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 43:2932-2937
The single-event-gate-rupture cross-section is measured as a function of drain-source and gate-source bias for some n-channel power MOSFETs. The experimental techniques are explained, and the results are interpreted with the help of two-dimensional c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03e135a3cc2cb5a550aa179ebdccfb31
https://doi.org/10.1109/23.556888
https://doi.org/10.1109/23.556888
Autor:
C.F. Wheatley, Eric Lorfevre, C. Dachs, M. Allenspach, J.-M. Palau, Jeffrey L. Titus, G.H. Johnson, Kenneth F. Galloway, Ronald D. Schrimpf, J.R. Brews
Publikováno v:
IEEE Transactions on Nuclear Science. 43:2927-2931
For particular bias conditions, it is shown that a device can fail due to either single-event gate rupture (SEGR) or to single-event burnout (SEB). The likelihood of triggering SEGR is shown to be dependent on the ion impact position. Hardening techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d9fbd2ec1215bdd677105caf6bd7dac
https://doi.org/10.1109/23.556887
https://doi.org/10.1109/23.556887
Publikováno v:
IEEE Transactions on Nuclear Science. 43:546-560
Heavy ions can trigger catastrophic failure modes in power metal-oxide-semiconductor field-effect transistors (MOSFETs). Single-event effects (SEE), namely, single-event burnout (SEB), and single-event gate rupture (SEGR), of power MOSFETs are catast
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::535cb8a3ae10bf2b91fe225a16ca584b
https://doi.org/10.1109/23.490900
https://doi.org/10.1109/23.490900
Publikováno v:
Radiation Effects and Defects in Solids. 139:229-239
This work concerns a parasitic N+PNN+ transistor appearing in a power MOSFET. 2D Medici simulations point out a close correlation between the static characteristic and the transient values of both the current and the reverse bias of the transistor ir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c010fa05076226267a41ee8a1aa395e7
https://doi.org/10.1080/10420159608212928
https://doi.org/10.1080/10420159608212928
Autor:
F. Roubaud, J.-M. Palau, J. Gasiot, P. Tastet, P. Calvel, C. Dachs, G. Bruguier, M.-C. Calvett
Publikováno v:
IEEE Transactions on Nuclear Science. 42:1935-1939
2D MEDICI simulator is used to investigate hardening solutions to single-event burnout (SEE). SEE parametric dependencies such as carrier lifetime reduction, base enlargement, and emitter doping decrease have been verified and a p/sup +/ plug modific
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efb474d23d7673e7bc6e301c64c98d82
https://doi.org/10.1109/23.489237
https://doi.org/10.1109/23.489237
Publikováno v:
IEEE Transactions on Nuclear Science. 41:2167-2171
Triggering of Single Event Burnout (SEB) in Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is studied by means of experiments and simulations based on real structures. Conditions for destructive and nondestructive events are investigate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9816485219933dce3527858cda1f9afa
https://doi.org/10.1109/23.340558
https://doi.org/10.1109/23.340558