Zobrazeno 1 - 10
of 55
pro vyhledávání: '"C. D. Stinespring"'
Publikováno v:
ACS Applied Nano Materials. 2:4104-4112
In the energy industry, there is a great need for novel low-cost gas-sensing solutions. This is particularly true for shale gas operations where there is a need to monitor both performance and comp...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e7c3312b720c2af1ca995a0116c9fc4
https://doi.org/10.1021/acsanm.9b00572
https://doi.org/10.1021/acsanm.9b00572
Publikováno v:
Carbon. 99:212-221
This research explores the surface chemistry of halogen based plasmas on silicon carbide and is aimed at the synthesis of large area graphene-on-insulator films. In these studies, 6H–SiC (0001) substrates were etched using either CF4 and Cl2 based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa69aabded442cf48901a70ad47f3bc7
https://doi.org/10.1016/j.carbon.2015.11.067
https://doi.org/10.1016/j.carbon.2015.11.067
Publikováno v:
Journal of Materials Research. 31:1924-1931
The role of bottom-up and top-down synthesis methods on the nanotribological response of few layer graphene (FLG) in air and various liquid environments is reported. Oxidized FLG adhesion against Si increases by a factor of 2 as compared to non-oxidi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1c1711474173d2b7a84883b7e380f59
https://doi.org/10.1557/jmr.2016.86
https://doi.org/10.1557/jmr.2016.86
Publikováno v:
Diamond and Related Materials. 101:107568
A two-step process using halogen based plasma etching combined with atmospheric pressure rapid thermal annealing has been used to synthesize few layer graphene films on 6H-SiC (0001) surfaces. In this process, the 6H-SiC substrates were etched under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc15da7a18fdedb8af50f6ef673fc64f
https://doi.org/10.1016/j.diamond.2019.107568
https://doi.org/10.1016/j.diamond.2019.107568
Publikováno v:
MRS Proceedings. 1786:65-70
A novel approach for synthesis of few layer graphene films on SiC has been developed which uses halogen based inductively coupled-reactive ion etching (ICP-RIE) and rapid thermal annealing (RTA) in atmospheric pressure argon. These films have been ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e80acf4e0874811a3aa1f57c90f27510
https://doi.org/10.1557/opl.2015.849
https://doi.org/10.1557/opl.2015.849
Publikováno v:
SPIE Proceedings.
The long range objectives of this research are to develop and demonstrate the use of graphene-nanoparticle composites as a high sensitivity, rapid response electronic nose for gas sensing in energy applications. Graphene based device structures suita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b04adb0ccbad5d8aa85646ab285fcaf
https://doi.org/10.1117/12.2223876
https://doi.org/10.1117/12.2223876
Autor:
A.A. Woodworth, C. D. Stinespring
Publikováno v:
Carbon. 48:1999-2003
Ni films ranging in thickness from 0.4 nm to 50 nm were deposited by evaporation onto terraced SiC (0 0 0 1) substrates at room temperature and annealed at 700 °C. The resulting changes in surface composition and morphology were characterized using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f470d55ff037a29e17c9d2d41e0133d9
https://doi.org/10.1016/j.carbon.2010.02.007
https://doi.org/10.1016/j.carbon.2010.02.007
Publikováno v:
Diamond and Related Materials. 16:486-493
A problem of long standing in the high-temperature growth of 3C–SiC on Si has been the formation of pits at the SiC/Si interface. The research described in this paper addresses this problem through the use of organosilicon growth precursors and exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b864b83c90c3cfdf79ad9d224361e7b8
https://doi.org/10.1016/j.diamond.2006.09.026
https://doi.org/10.1016/j.diamond.2006.09.026
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:1044-1050
An ultrahigh vacuum compatible methyl radical source has been developed and characterized. The methyl radicals were generated by passing a dilute mixture of methane in argon through a microwave discharge and sampling the discharge products using a mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73e454fb94297e04cedc4c0c45197601
https://doi.org/10.1116/1.2209655
https://doi.org/10.1116/1.2209655