Zobrazeno 1 - 9
of 9
pro vyhledávání: '"C. D. Lamp"'
Autor:
B. Hitti, C. D. Lamp, Kim H. Chow, T. L. Estle, R. L. Lichti, J. W. Schneider, S. R. Kreitzman, Philippe Mendels
Publikováno v:
Hyperfine Interactions. 86:673-679
The radio frequencyμSR technique developed at TRIUMF was used to measure the temperature dependence of the diamagnetic muon, Mu, and Mu* amplitudes in silicon between 10 K and 500 K. Six samples doped with phosphorus (n-type) and boron (p-type) in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d781020622f5b686b33554d92309d2c0
https://doi.org/10.1007/bf02068962
https://doi.org/10.1007/bf02068962
Autor:
C. D. Lamp, S. Yang
Publikováno v:
Physical Review B. 49:1690-1695
The symmetry of the EL2 center in n-type liquid-encapsulated Czochralski GaAs is investigated through numerical fitting of capacitance transients measured under uniaxial stress. From experimental data which superficially appears compatible with ${\ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de71c69e5326776eb67207668a4cbab1
https://doi.org/10.1103/physrevb.49.1690
https://doi.org/10.1103/physrevb.49.1690
Autor:
S. Yang, C. D. Lamp
Publikováno v:
Journal of Applied Physics. 74:6636-6641
A numerical fitting method based on the deep level transient spectroscopy (DLTS) technique is presented. This method deals with a situation where the standard rate window DLTS is no longer sufficient, i.e., the assumption that the defect density NT i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::032632fe9452def0f1f7e7039ac4148e
https://doi.org/10.1063/1.355105
https://doi.org/10.1063/1.355105
Autor:
S. R. Kreitzman, R. F. Kiefl, J. W. Schneider, Bassam Hitti, R. L. Lichti, S.A. Dodds, Ch. Niedermayer, Kim H. Chow, C. D. Lamp, T. Pfiz, R.C. Duvarney, T.L. Estle
Publikováno v:
Materials Science Forum. :1115-1120
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5599d5f33845f9b389c4a23bb0eaaa98
https://doi.org/10.4028/www.scientific.net/msf.83-87.1115
https://doi.org/10.4028/www.scientific.net/msf.83-87.1115
Autor:
D. J. James, C. D. Lamp
Publikováno v:
Applied Physics Letters. 62:2081-2083
Oxygen‐related thermal donor formation in Czochralski silicon is characterized by the capacitance‐voltage and deep level transient spectroscopy techniques as a function of 450 °C anneal time following hydrogenation. Increases in the formation ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50f6bc0e2b45ca6dce4153abaf8b1724
https://doi.org/10.1063/1.109485
https://doi.org/10.1063/1.109485
Publikováno v:
Physical Review Letters. 51:1286-1289
Etude du niveau E c -0,17 eV du silicium irradie par des neutrons, par spectroscopie transitoire sous contrainte uniaxiale. Determination de la symetrie des defauts, de la redistribution electronique induite par la contrainte et de l'orientation pref
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::487f81b4b1fd7eedfa4490c916c53cc1
https://doi.org/10.1103/physrevlett.51.1286
https://doi.org/10.1103/physrevlett.51.1286
Publikováno v:
Review of Scientific Instruments. 55:210-212
An apparatus for applying uniaxial stress >109 Pa at temperatures of 20–300 K is described. The apparatus is used with a deep level transient spectroscopy (DLTS) experiment, but it has more general applications. We have used this apparatus to obser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9149a3a4229f56b35b44d730009269b4
https://doi.org/10.1063/1.1137725
https://doi.org/10.1063/1.1137725
Autor:
N. Hamaguchi, P. Russell, T. P. Humphreys, D. L. Dreifus, C. D. Lamp, A. A. Tuttle, Nadia A. El-Masry, Salah M. Bedair, Y. Lo
Publikováno v:
Applied Physics Letters. 49:942-944
Several superlattice structures, grown by molecular beam epitaxy, have been used to reduce the density of threading dislocations originating from the GaAs substrate. Results clearly indicate that compared to epitaxial layers grown directly on GaAs su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83db64f2e3ef68779efef276a215d211
https://doi.org/10.1063/1.97631
https://doi.org/10.1063/1.97631
Publikováno v:
Applied Physics Letters. 41:1063-1065
A new variation of the deep level transient spectroscopy technique is presented. In the new approach, the current transient is integrated, yielding a charge transient. A simple circuit for integrating the current is given and is analyzed. The charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b56a8e85e953b7e99e379b66832f4f02
https://doi.org/10.1063/1.93401
https://doi.org/10.1063/1.93401