Zobrazeno 1 - 10
of 72
pro vyhledávání: '"C. D'Emic"'
Autor:
J. Rozen, Y. Ogawa, M. Hatanaka, T. Ando, E. Cartier, M.M. Frank, M. Hopstaken, J. Bruley, K.-T. Lee, J.-B. Yau, Y. Sun, R.L. Bruce, C. D'Emic, X. Sun, K. Suu, R.T. Mo, E. Leobandung, V. Narayanan
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::647169d610a6f88134c73cb5c035e338
https://doi.org/10.7567/ssdm.2018.c-8-02
https://doi.org/10.7567/ssdm.2018.c-8-02
Akademický článek
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Autor:
X. Sun, C. D'Emic, C.-W. Cheng, A. Majumdar, Y. Sun, E. Cartier, R. L. Bruce, M. Frank, H. Miyazoe, K.-T. Shiu, S. Lee, J. Rozen, J. Patel, T. Ando, W.-B. Song, M. Lofaro, M. Krishnan, B. Obrodovic, K.-T. Lee, H. Tsai, W.-E. Wang, W. Spratt, K. Chan, J.-B. Yau, P. Hashemi, M. Khojasteh, M. Cantoro, J. Ott, T. Rakshit, Y. Zhu, D. Sadana, C.-C. Yeh, V. Narayanan, R. T. Mo, Y.-C. Heo, D.-W. Kim, M. S. Rodder, E. Leobandung
Publikováno v:
2017 Symposium on VLSI Technology.
We report the fabrication of short-channel FinFETs on InGaAs-on-silicon wafers using the aspect ratio trapping (ART) technique. We demonstrate excellent short-channel control down to 20 nm gate length due to scaled fin width down to 9 nm and reductio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0d73a8089cc05ae826b2f888521f76f
https://doi.org/10.23919/vlsit.2017.7998193
https://doi.org/10.23919/vlsit.2017.7998193
Akademický článek
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Publikováno v:
IEEE Transactions on Nuclear Science. 52:2231-2238
We report the combined effects of irradiation and bias temperature stress (BTS) on MOS capacitors with HfO/sub 2/ dielectrics. Irradiation is found to enhance BTS-induced degradation in these devices; significant differences in the amounts of enhance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6cb3c67463b1351060bfed867b007b8
https://doi.org/10.1109/tns.2005.860667
https://doi.org/10.1109/tns.2005.860667
Autor:
C. D'Emic, J.R. Schwank, Marty R. Shaneyfelt, Evgeni Gusev, Paul E. Dodd, J.A. Felix, R.M. Fleming, Daniel M. Fleetwood
Publikováno v:
IEEE Transactions on Nuclear Science. 51:3143-3149
We examine the radiation response, annealing characteristics, and long-term reliability of capacitors with Al gates and Al/sub 2/O/sub 3/-SiO/sub x/N/sub y/ gate dielectrics stacks which received a forming gas anneal (FGA) or an O/sub 2/ and FG annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b45a1ca632d7268253828f068376bcde
https://doi.org/10.1109/tns.2004.839204
https://doi.org/10.1109/tns.2004.839204
Autor:
Ronald D. Schrimpf, J.R. Schwank, Evgeni Gusev, Marty R. Shaneyfelt, Daniel M. Fleetwood, J.A. Felix, T.L. Meisenheimer, Paul E. Dodd, C. D'Emic
Publikováno v:
IEEE Transactions on Nuclear Science. 50:1910-1918
We examine the total-dose radiation response of capacitors and transistors with stacked Al/sub 2/O/sub 3/ on oxynitride gate dielectrics with Al and poly-Si gates after irradiation with 10 keV X-rays. The midgap voltage shift increases monotonically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad1f91f1ba954dff45ed1e5b779258e4
https://doi.org/10.1109/tns.2003.820763
https://doi.org/10.1109/tns.2003.820763
Autor:
G. Shahidi, M. Ieong, T. Dalton, G. Gibson, J. Tornello, L. Deligianni, D. Canaperi, S. Medd, S. Maurer, W. Graham, P. Kozlowski, B. To, R. Meyer, J. Newbury, E. Sikorski, S. Steen, L. Shi, Y. Zhang, J. Rubino, C. D'Emic, J. Patel, J. Ott, A. Ray, S. Bedell, R. Rao, L. Chang, J. Sleight, S.-H. Lo, A. Kumar, K. Chan, M. Yang
Publikováno v:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
Novel silicon-on-insulator (SOI) structures are presented on hybrid orientation substrates (SuperHOT), i.e. with nFETs on (100) surface orientation and pFETs on (110) orientation, using silicon lateral overgrowth. Functional SOI MOSFETs and ring osci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97ed8194574e64a116183be0e1469e75
https://doi.org/10.1109/vlsit.2006.1705252
https://doi.org/10.1109/vlsit.2006.1705252
Autor:
Dawei Heh, Eric M. Vogel, Jin-Ping Han, Curt A. Richter, Evgeni Gusev, John S. Suehle, C. D'Emic
Publikováno v:
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).
We use variable rise/fall-time charge pumping (CP) to determine the energy distribution of interface trap density (Dit) and capture cross-section of electrons/holes in high-k HfO/sub 2/ gated nMOSFETs. Our results have revealed that the Dit is much h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d92989de873e571db0124fac3578472
https://doi.org/10.1109/vlsit.2003.1221135
https://doi.org/10.1109/vlsit.2003.1221135
Autor:
Steven Allen Cordes, D.F. Canaperi, Hon-Sum Philip Wong, J.L. Speidell, Sherif A. Goma, Steven J. Koester, J. O. Chu, C. D'Emic, R.M. Anderson, Lijuan Huang, Patricia M. Mooney
Publikováno v:
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).
N- and p-MOSFETs have been fabricated in strained Si on SiGe on insulator (SSOI) with high (15-25%) Ge content. Wafer bonding and H-induced layer transfer techniques enabled the fabrication of the high Ge content SiGe-on-insulator (SGOI) substrates.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9eca012a760217a8087775b5cd2a5464
https://doi.org/10.1109/vlsit.2001.934945
https://doi.org/10.1109/vlsit.2001.934945