MONTE CARLO SIMULATION OF GIANT PIEZORESISTANCE EFFECT IN p-TYPE SILICON NANOSTRUCTURES

Autor: V. Aubry-Fortuna, C. Chassat, T. T. Trang Nghiem, Philippe Dollfus, A. Bosseboeuf

Publikováno v: Modern Physics Letters B. 25:995-1001

We present a study of the giant piezoresistance effect in p-type silicon using full-band Monte Carlo simulation based on 30-band k.p calculation. This effect has been demonstrated experimentally in Si nanowires by He and Yang. By including the well-k

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1c805bcc608cf86cd4dcd6f6de74be79
https://doi.org/10.1142/s0217984911026711

Monte Carlo simulation of double gate MOSFET including multi sub-band description

Autor: C. Chassat, Philippe Dollfus, Arnaud Bournel, Florian Monsef, V. Aubry-Fortuna, Jérôme Saint-Martin

Publikováno v: Journal of Computational Electronics. 5:439-442

A new two-dimensional self-consistent Monte-Carlo simulator including the multi sub-band transport in a 2D electron gas is described and applied to an ultra-thin Double Gate MOSFET. This approach takes into account both out of equilibrium transport a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1c1f304ad4f7971a6f01a1990f3b231b
https://doi.org/10.1007/s10825-006-0043-4

Graphene nanomesh transistor with high on/off ratio and good saturation behavior

Autor: C. Chassat, Damien Querlioz, Salim Berrada, Arnaud Bournel, Alfonso Alarcón, Jérôme Saint-Martin, Viet Hung Nguyen, Philippe Dollfus

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2013, 103 (18), pp.183509
Applied Physics Letters, American Institute of Physics, 2013, 103 (18), ⟨10.1063/1.4828496⟩

We investigate the device operation and performance of transistors based on a graphene nanomesh lattice. By means of numerical simulation, we show that this device architecture allows suppressing the chiral tunneling, which reduces drastically the of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2748745c42904e54d208c6db0785c606
https://hal.archives-ouvertes.fr/hal-01951910

Edge shape effect on vibrational modes in graphene nanoribbons: A numerical study

Autor: Jérôme Saint-Martin, Fulvio Mazzamuto, C. Chassat, A. Valentin, P. Dollfus

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2011, 109 (6), pp.064516. ⟨10.1063/1.3552293⟩

The phonon dispersion and the vibrational density of states (VDOS) of graphene nanoribbons (GNR) of various widths and edge shapes are calculated using the force constant model including the fifth-nearest neighbor atoms. Among typical graphene peaks

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8cb0884b38c79afc05523cda466972f
https://hal-cnrs.archives-ouvertes.fr/hal-03440047

Quantum transport of Dirac fermions in graphene field effect transistors

Autor: C. Chassat, Philippe Dollfus, Arnaud Bournel, V. Hung Nguyen

Publikováno v: 2010 International Conference on Simulation of Semiconductor Processes and Devices.

We present a quantum transport simulation of graphene field-effect transistors based on the self consistent solution of 2D-Poisson solver and Dirac equation within the non-equilibrium Green's function formalism. The device operation of double gate 2D

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::29441f25e28e74dcae375f480a8be7b0
https://doi.org/10.1109/sispad.2010.5604585