Zobrazeno 1 - 10
of 23
pro vyhledávání: '"C. Chaneliere"'
Autor:
A. L. Souillet, Pascal Joly, C. Chaneliere, Fabienne Jouen, C. Dufour, Christine Bodemer, Frédéric Cambazard, Denis Jullien, Philippe Reix
Publikováno v:
British Journal of Dermatology
British Journal of Dermatology, Wiley, 2012, 166, pp.1140--2. ⟨10.1111/j.1365-2133.2011.10748.x⟩
British Journal of Dermatology, 2012, 166, pp.1140--2. ⟨10.1111/j.1365-2133.2011.10748.x⟩
British Journal of Dermatology, Wiley, 2012, 166, pp.1140--2. ⟨10.1111/j.1365-2133.2011.10748.x⟩
British Journal of Dermatology, 2012, 166, pp.1140--2. ⟨10.1111/j.1365-2133.2011.10748.x⟩
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fff850c75a3ebb2cb0c7620d26e9370a
https://doi.org/10.1111/j.1365-2133.2011.10748.x
https://doi.org/10.1111/j.1365-2133.2011.10748.x
Publikováno v:
Journal of Applied Physics. 86:480-486
In this paper, the conduction mechanisms in Ta2O5/SiO2 and Ta2O5/Si3N4 stacked structures on Si are investigated both experimentally and theoretically. Amorphous Ta2O5 films (20–60 nm thick) were deposited by low pressure chemical vapor deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8c5fdbb0cde76e5fcc13650f2ef3130
https://doi.org/10.1063/1.370756
https://doi.org/10.1063/1.370756
Publikováno v:
Microelectronics Reliability. 39:261-268
In this study, the structural and electrical properties of amorphous and crystalline Ta 2 O 5 thin films deposited on p-type Si by low pressure metalorganic chemical vapour deposition from a Ta(OC 2 H 5 ) 5 source have been investigated. The as-depos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::942846e7329b53e8fc610c3a5870e4f6
https://doi.org/10.1016/s0026-2714(98)00218-2
https://doi.org/10.1016/s0026-2714(98)00218-2
Publikováno v:
Materials Science and Engineering: R: Reports. 22:269-322
This paper reviews the present knowledge on tantalum pentoxide (Ta 2 O 5 ) thin films and their applications in the field of microelectronics and integrated microtechnologies. Different methods used to produce tantalum oxide layers are described, emp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66c6af301401eaa856e870da5ca96134
https://doi.org/10.1016/s0927-796x(97)00023-5
https://doi.org/10.1016/s0927-796x(97)00023-5
Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor
Publikováno v:
Journal of Applied Physics. 83:4823-4829
In this work, the structural and electrical properties of amorphous and crystalline Ta2O5 thin films deposited on p-type Si substrates by low-pressure chemical vapor deposition from a Ta(OC2H5)5 precursor have been investigated. The as-deposited laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d163e2df7428f9dc24e039d72ec7215b
https://doi.org/10.1063/1.367277
https://doi.org/10.1063/1.367277
Publikováno v:
IEEE Electron Device Letters. 18:447-449
Silicon MOS transistors having amorphous Ta/sub 2/O/sub 5/ insulator gates have been fabricated. The Ta/sub 2/O/sub 5/ films were deposited using a low pressure (a few mtorr) plasma-enhanced CVD process in a microwave (2.45 GHz) excited electron cycl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff0dd2aca1d14e941d3c5e2aff156690
https://doi.org/10.1109/55.622525
https://doi.org/10.1109/55.622525
Autor:
A. Sibai, S. Nitsche, A. Glachant, Didier Goguenheim, Nicolas Pic, Dominique Vuillaume, J.Y. Hoarau, C. Chaneliere
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2001, 45, pp.1265-1270
Solid-State Electronics, 2001, 45, pp.1265-1270
Solid-State Electronics, Elsevier, 2001, 45, pp.1265-1270
Solid-State Electronics, 2001, 45, pp.1265-1270
The aim of this work is to obtain the electrical properties of a leaky 2 nm ultrathin thermally grown nitride film using the classical high frequency capacitance ( C ( V )) measurements. The substrate Si(1 0 0) surface cleaned in ultrahigh vacuum is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73fa4e6f6e157eca94f1bdbcbfb7d9fd
https://hal.archives-ouvertes.fr/hal-00152162
https://hal.archives-ouvertes.fr/hal-00152162
Autor:
Nicolas Pic, S. Nitsche, C. Chaneliere, Dominique Vuillaume, J.Y. Hoarau, A. Glachant, A. Sibai, Didier Goguenheim
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2000, 40, pp.589-592
Microelectronics Reliability, 2000, 40, pp.589-592
Microelectronics Reliability, Elsevier, 2000, 40, pp.589-592
Microelectronics Reliability, 2000, 40, pp.589-592
The aim of this work is to obtain the electrical properties of a leaky 2 nm ultrathin thermally grown nitride film using the classical HF C ( V ) measurements. The substrate Si (1 0 0) surface cleaned in UHV is nitrided in a low pressure of nitric ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::604183de887e8614c30592cc2f76926f
https://hal.archives-ouvertes.fr/hal-00158478
https://hal.archives-ouvertes.fr/hal-00158478
Autor:
A. Kakimoto, K. Barla, J.P. Reynard, C. Chaneliere, Jean-Luc Autran, K. Shimomura, H. Ushikawa, J. Michailos, A. Hiroe
Publikováno v:
MRS Proceedings. 592
Ultra-thin tantalum pentoxide (Ta2O5) layers of thicknesses ranging from 6 to 10 nm were deposited by low pressure chemical vapor deposition from Ta(OC2 H5)5 on rapid thermal nitrided silicon substrates. Films were annealed in UV-O3 at 450°C, in dry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29dd0646b08da1de38f3ff2b9cfd2b3c
https://doi.org/10.1557/proc-592-75
https://doi.org/10.1557/proc-592-75
Publikováno v:
Electrochemical and Solid-State Letters. 2:291
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0f3abd56a9f578ecc0825a875c4b1b4
https://doi.org/10.1149/1.1390814
https://doi.org/10.1149/1.1390814