Zobrazeno 1 - 10
of 27
pro vyhledávání: '"C. Camperi-Ginestet"'
Autor:
S.T. Wilkinson, W.S. Lacy, Myunghee Lee, C. Camperi-Ginestet, Nan Marie Jokerst, Martin A. Brooke, B. Buchanan, D.S. Wills, H.H. Cat
Publikováno v:
Journal of Lightwave Technology. 13:1085-1092
This paper presents a three-dimensional, highly parallel, optically interconnected system to process high-throughput stream data such as images. The vertical optical interconnections are realized using. Integrated optoelectronic devices operating at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57354d2ea23c82f9d24369df1f91182f
https://doi.org/10.1109/50.390224
https://doi.org/10.1109/50.390224
Publikováno v:
IEEE Photonics Technology Letters. 5:254-257
The authors report the first demonstration of vertical optical communication through stacked Si wafers using low-cost hybrid monolithic thin-film InGaAsP/InP emitters and detectors, designed for operation at 1.3 mu m. A thin-film InGaAsP homojunction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcc67a22ed02d3f6769a3815805eaccb
https://doi.org/10.1109/68.196022
https://doi.org/10.1109/68.196022
Publikováno v:
IEEE Photonics Technology Letters. 4:1003-1006
A three-dimensional integration technology that electrically connects an independently optimized thin-film device layer to a Si circuitry layer is reported. An epitaxial liftoff GaAs thin-film optical detector is integrated directly on top of Si ampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c426202eaee9757dc70be05dc48f5321
https://doi.org/10.1109/68.157129
https://doi.org/10.1109/68.157129
Publikováno v:
IEEE Photonics Technology Letters. 3:1123-1126
The authors report the selective and alignable deposition of patterned thin-film epitaxial GaAs/GaAlAs devices onto a host substrate such as silicon for low cost, manufacturable hybrid integrated optoelectronic circuits. The authors use a thin polyim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcda557e0090a49fd67c8667c3a1aad4
https://doi.org/10.1109/68.118028
https://doi.org/10.1109/68.118028
Publikováno v:
Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2934d25f6abb3ffa166bb53ea4ce2dd8
https://doi.org/10.1109/leosst.1992.697472
https://doi.org/10.1109/leosst.1992.697472
Publikováno v:
Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6b613eee5be5f869580b90cbb543584
https://doi.org/10.1109/leosst.1992.697487
https://doi.org/10.1109/leosst.1992.697487
Autor:
Nan Marie Jokerst, C. Camperi-Ginestet, Yiqin Wang, B. Buchanan, Martin A. Brooke, Mark G. Allen
Publikováno v:
Scopus-Elsevier
Martin Brooke
Martin Brooke
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c52a62105428dc2de45bbc3b24db007f
https://doi.org/10.1109/leosst.1994.700465
https://doi.org/10.1109/leosst.1994.700465
Publikováno v:
IEEE Photonics Technology Letters. 7:1028-1030
To demonstrate optical communication through stacked silicon circuitry, thin film InGaAsP-based emitters and photodetectors have been bonded directly onto silicon circuitry. These optoelectronic devices operate at a wavelength to which silicon is tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0834e6ec990286543f9452262664f3da
https://doi.org/10.1109/68.414691
https://doi.org/10.1109/68.414691
Publikováno v:
First International Workshop on Massively Parallel Processing Using Optical Interconnections.
The author present a highly parallel, three-dimensionally interconnected system to process high-throughput stream data such as images. Optical interconnect at wavelengths to which silicon is transparent is used to create the 3D system. Thin film InP/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac704eae9e0f639ae79b9d5b7766a33b
https://doi.org/10.1109/mppoi.1994.336641
https://doi.org/10.1109/mppoi.1994.336641
Publikováno v:
SPIE Proceedings.
While many circuit designers have tackled the problem of CMOS digital communications receiver design, few have considered the problem of circuitry suitable for an all CMOS digital IC fabrication process. Faced with a high speed receiver design the ci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bef7f5d0827fd7371177c7e048d58e4b
https://doi.org/10.1117/12.206323
https://doi.org/10.1117/12.206323