Zobrazeno 1 - 10
of 38
pro vyhledávání: '"C. Cabanel"'
Publikováno v:
The European Physical Journal Applied Physics. 34:107-116
The local electric behaviour of IMPATT diodes was studied by scanning transmission electron beam induced current in cross-section method (X-STEBIC). This technique of induced current measurement makes it possible to probe the depletion zone of a junc
Publikováno v:
The European Physical Journal Applied Physics. 10:43-51
The Scanning Transmission Electron Beam Induced Current Technique (STEBIC) was adapted to allow the analysis of local electrical activity in semiconductor diodes. This technique enabled us to analyse the in situ properties of IMPATT junctions (IMPact
Autor:
C. Cabanel
Publikováno v:
Philosophical Magazine Letters. 79:55-61
The scanning transmission electron-beam-induced current technique has been adapted to allow the analysis of local electrical properties in n + -n-p-p + diodes. Samples were thinned down as cross-sections, for observation and analysis in transmission
Publikováno v:
Materials Science Forum. :733-736
Publikováno v:
Superlattices and Microstructures. 9:231-234
We show, from the photoluminescence of a GaAs-Ga 0.65 Al 0.35 As superlattice of period 70 A, that the localization of the electrons takes place at low field (∼ 1 × 10 4 V/cm). When the localization begins, the binding energy of the heavy-hole exc
Publikováno v:
Solid State Communications. 75:825-829
We show, from the photoluminescence of a GaAsGa0.65Al0.35As superlattice of period 70 A, that the localization of the electrons takes place at low field (≈ 1 × 104 V cm−1). Before the localization, the energy of the photoluminescence line doe
Autor:
C. Cabanel, J. Y. Laval
Publikováno v:
Journal of Applied Physics. 67:1425-1432
In order to improve the capabilities of the electron‐beam‐induced current method, a technique based on scanning transmission electron‐beam‐induced current has been developed. It is shown that it enables the direct correlation of structural de
Publikováno v:
Le Journal de Physique Colloques. 51:C1-991
Publikováno v:
Le Journal de Physique Colloques. 51:C1-439
In order to discriminate between the role of the structure and chemistry on the electrical activity of boundaries, p-type silicon bicrystals, characterized by a chemical gradient in aluminium from bottom to top of the ingot, were grown by a direction
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 54:336-337
In order to get direct information on the relationships between the structural and electrical properties of interfaces, we developed in situ experiments in TEM-STEM and SEM for the characterization of the local behaviour of majority and minority carr