Zobrazeno 1 - 10
of 315
pro vyhledávání: '"C. Cabanel"'
Autor:
Scorziello, Antonella1 (AUTHOR) rossana.sirabella@unina.it, Sirabella, Rossana1 (AUTHOR) michele.tufano@unina.it, Sisalli, Maria Josè2 (AUTHOR) mariajose.sisalli@unina.it, Tufano, Michele1 (AUTHOR) lgiacciol@gmail.com, Giaccio, Lucia1 (AUTHOR) elena.dapolito@unina.it, D'Apolito, Elena1 (AUTHOR) lorenzo.castellano@unina.it, Castellano, Lorenzo1 (AUTHOR), Annunziato, Lucio3 (AUTHOR) scorziel@unina.it
Publikováno v:
International Journal of Molecular Sciences. Nov2024, Vol. 25 Issue 21, p11490. 21p.
Publikováno v:
The European Physical Journal Applied Physics. 34:107-116
The local electric behaviour of IMPATT diodes was studied by scanning transmission electron beam induced current in cross-section method (X-STEBIC). This technique of induced current measurement makes it possible to probe the depletion zone of a junc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4ecd04eff29e3dddb864205a4ed154c
https://doi.org/10.1051/epjap:2006042
https://doi.org/10.1051/epjap:2006042
Publikováno v:
The European Physical Journal Applied Physics. 10:43-51
The Scanning Transmission Electron Beam Induced Current Technique (STEBIC) was adapted to allow the analysis of local electrical activity in semiconductor diodes. This technique enabled us to analyse the in situ properties of IMPATT junctions (IMPact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3774a9429c1715606d5f2605f81e615f
https://doi.org/10.1051/epjap:2000118
https://doi.org/10.1051/epjap:2000118
Autor:
C. Cabanel
Publikováno v:
Philosophical Magazine Letters. 79:55-61
The scanning transmission electron-beam-induced current technique has been adapted to allow the analysis of local electrical properties in n + -n-p-p + diodes. Samples were thinned down as cross-sections, for observation and analysis in transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1db31e97ce6bec5c8b7f3a58785cbaf0
https://doi.org/10.1080/095008399177543
https://doi.org/10.1080/095008399177543
Publikováno v:
Materials Science Forum. :733-736
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49c3579d08edff0fc4a648910cff8785
https://doi.org/10.4028/www.scientific.net/msf.126-128.733
https://doi.org/10.4028/www.scientific.net/msf.126-128.733
Publikováno v:
Superlattices and Microstructures. 9:231-234
We show, from the photoluminescence of a GaAs-Ga 0.65 Al 0.35 As superlattice of period 70 A, that the localization of the electrons takes place at low field (∼ 1 × 10 4 V/cm). When the localization begins, the binding energy of the heavy-hole exc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2af4f5b47dca86e7dbf12f790e4677b1
https://doi.org/10.1016/0749-6036(91)90288-3
https://doi.org/10.1016/0749-6036(91)90288-3
Publikováno v:
Solid State Communications. 75:825-829
We show, from the photoluminescence of a GaAsGa0.65Al0.35As superlattice of period 70 A, that the localization of the electrons takes place at low field (≈ 1 × 104 V cm−1). Before the localization, the energy of the photoluminescence line doe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f70886dd1b6e65eacafd49c1a7b30fe
https://doi.org/10.1016/0038-1098(90)90759-5
https://doi.org/10.1016/0038-1098(90)90759-5
Autor:
C. Cabanel, J. Y. Laval
Publikováno v:
Journal of Applied Physics. 67:1425-1432
In order to improve the capabilities of the electron‐beam‐induced current method, a technique based on scanning transmission electron‐beam‐induced current has been developed. It is shown that it enables the direct correlation of structural de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b20d174aad8d45b4fea8c619a275633
https://doi.org/10.1063/1.345673
https://doi.org/10.1063/1.345673
Publikováno v:
Le Journal de Physique Colloques. 51:C1-991
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3654d3d471ba155e098041b1f6d53161
https://doi.org/10.1051/jphyscol:19901154
https://doi.org/10.1051/jphyscol:19901154
Publikováno v:
Le Journal de Physique Colloques. 51:C1-439
In order to discriminate between the role of the structure and chemistry on the electrical activity of boundaries, p-type silicon bicrystals, characterized by a chemical gradient in aluminium from bottom to top of the ingot, were grown by a direction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5dab69928aaf40182c9b0f97b3c9292
https://doi.org/10.1051/jphyscol:1990168
https://doi.org/10.1051/jphyscol:1990168