Zobrazeno 1 - 10
of 509
pro vyhledávání: '"C. C. Phillips"'
Publikováno v:
AIP Advances, Vol 8, Iss 2, Pp 025203-025203-5 (2018)
We investigate the mechanisms for the reduction of losses in doped semiconductor multilayers used for the construction of uniaxial metamaterials and show that maximizing the mean scattering time of the doped layers is key to spectrally isolating loss
Externí odkaz:
https://doaj.org/article/ca1db66687bc4e7f9fe502e1b7cbf3da
Autor:
C. C. Phillips
Publikováno v:
IEE Proceedings - Optoelectronics. 144:262-265
Optical, magneto-optical and time-resolved spectroscopies indicate that arsenic-rich InAs/InAs1-x Sbx strained-layer superlattices have a pronounced type-II offset, with electrons confined to the alloy layers, encouragingly high radiative efficiencie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d5394872e763cadca1bf8a177091f79
https://doi.org/10.1049/ip-opt:19971380
https://doi.org/10.1049/ip-opt:19971380
Autor:
R. A. Stradling, C. C. Phillips, L. Hart, C. M. Ciesla, M. Livingstone, W. T. Yuen, Y B Li, D. J. Bain, M. J. Pullin, P. J. P. Tang, Ian Galbraith, C. R. Pidgeon
Publikováno v:
Physical Review B. 55:4589-4595
The band alignments and band offsets were investigated for In(As,Sb)/InAs superlattices of various periods and compositions. Magnetoabsorption experiments allowed identification of subband energies and in-plane reduced masses. Using an 8\ifmmode\time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::146c8a2af7c65a7a0c812552ab8299c7
https://doi.org/10.1103/physrevb.55.4589
https://doi.org/10.1103/physrevb.55.4589
Publikováno v:
Physical Review B. 55:4376-4381
We report the 0--5 T magnetoabsorption spectra of high-quality InAs epilayers grown by molecular-beam epitaxy on GaAs. Excitonic absorption is observed at all fields, and, from the absolute energy of the magnetoexciton absorption peak, the zero-field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b39edf647ba8384b348c0e7041e70b41
https://doi.org/10.1103/physrevb.55.4376
https://doi.org/10.1103/physrevb.55.4376
Autor:
C. R. Pidgeon, P. J. P. Tang, S. J. Chung, C. C. Phillips, C. J. G. M. Langerak, B. N. Murdin, C. M. Ciesla, T.A. Malik, A. G. Norman, M. J. Pullin, Y B Li, W. T. Yuen, R. A. Stradling
Publikováno v:
Materials Science and Engineering: B. 44:260-265
The growth and evaluation of InAs/GaSb/AlSb quantum wells and InAs, -,Sb,/InAs strained layer superlattices are discussed. A characteristic of the InAs/GaSb/AISb combinations is their high mobility and the applications are mainly concerned with optim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1781a6339d627f1acdb3cbc62ad37b92
https://doi.org/10.1016/s0921-5107(96)01742-4
https://doi.org/10.1016/s0921-5107(96)01742-4
Autor:
C. C. Phillips, R. A. Stradling, C. R. Pidgeon, C J G M Langerak, M. J. Pullin, Ben Murdin, Dino A. Jaroszynski, Ian Galbraith, M. Livingstone, C. M. Ciesla, P. J. P. Tang
Publikováno v:
Journal of Applied Physics, 80, 2994-2997
Room-temperature pump-probe transmission experiments have been performed on an arsenic-rich InAs/InAs1-xSbx strained layer superlattice (SLS) above the fundamental absorption edge near 10 mu m, using a ps far-infrared free-electron laser. Measurement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f066bcee9ff4db834e4bcf8fdc7c6d3d
https://doi.org/10.1063/1.363157
https://doi.org/10.1063/1.363157
Autor:
M. J. Pullin, C. C. Phillips, Y B Li, R. A. Stradling, P. J. P. Tang, L. Hart, Andrew G. Norman, S. J. Chung
Publikováno v:
Semiconductor Science and Technology. 10:1177-1180
Arsenic-rich InAs/lnAs1-xSbx strained layer superlattices (SLSs) grown on GaAs substrates by molecular beam epitaxy (MBE) are studied for their potential application as infrared emitters. The long-wavelength emission (4-11 mu m) is highly sensitive t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d414612cfe419c59edba5b5951ba150
https://doi.org/10.1088/0268-1242/10/8/023
https://doi.org/10.1088/0268-1242/10/8/023
Publikováno v:
Semiconductor Science and Technology. 10:1103-1107
Optical measurements in the 8-14 mu m band on asymmetrically slab-doped InSb and InAs doping superlattices (a-nipis) at 10 K showed strong intersubband absorption features. The observed subband spectra are compared with a full self-consistent wavefun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6f8b96dcd3fb0f636025a7daec9e525
https://doi.org/10.1088/0268-1242/10/8/008
https://doi.org/10.1088/0268-1242/10/8/008
Publikováno v:
Semiconductor Science and Technology. 10:476-482
Infrared photoluminescence (PL) from InAs and InSb n-i-p-i superlattices grown by MBE has been found for the first time and has been studied over an extended temperature range. Quantum confined band-to-band transitions are observed at lambda approxim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4b35e49246152387a6ab22c08edf5b6
https://doi.org/10.1088/0268-1242/10/4/016
https://doi.org/10.1088/0268-1242/10/4/016
Publikováno v:
Semiconductor Science and Technology. 10:547-550
Efficient electrically gated photoemission has been shown from a novel caesiated Au-semiconductor structure with a compositionally graded GaAs-Al0.25Ga0.75As emitter layer. The structure showed a quantum efficiency (QE) of approximately=7.5*10-4 unde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03505663a261a184fad62f33b7165ba9
https://doi.org/10.1088/0268-1242/10/4/028
https://doi.org/10.1088/0268-1242/10/4/028