Zobrazeno 1 - 10 of 17 pro vyhledávání: '"C. C. Katsidis"'
1
Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications
Autor: S. Germanis, Fabrice Donatini, Maria Androulidaki, Joel Cibert, S. L. Tan, K. Moratis, C. C. Katsidis, Katerina Tsagaraki, Zacharias Hatzopoulos, N. T. Pelekanos, H. Mariette, Yann-Michel Niquet
Publikováno v: Nanoscale Research Letters
Nanoscale Research Letters, SpringerOpen, 2016, 11 (1), pp.176. ⟨10.1186/s11671-016-1384-y⟩
Nanoscale Research Letters, 2016, 11 (1), pp.176. ⟨10.1186/s11671-016-1384-y⟩
We report on the successful growth of strained core-shell GaAs/InGaAs nanowires on Si (111) substrates by molecular beam epitaxy. The as-grown nanowires have a density in the order of 10(8) cm(-2), length between 3 and 3.5 μm, and diameter between 6
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2105c3b184b9b03d2233198868c5f5da
https://hal.archives-ouvertes.fr/hal-01319861
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2
Enhanced Stark Tuning of Single InAs(211)BQuantum Dots due to Nonlinear Piezoelectric Effect in Zincblende Nanostructures
Autor: S. Germanis, C. C. Katsidis, G. P. Dimitrakopulos, Antonis Stavrinidis, Zacharias Hatzopoulos, Th. Kehagias, Nikos T. Pelekanos, Joseph Kioseoglou, George Konstantinidis, N. Florini, S. I. Tsintzos
Publikováno v: Physical Review Applied. 6
Efficient single-photon emitters (SPEs) are key to quantum communications and information processing, and frequency tunability is an especially appealing feature. The authors find that at 100 K---above liquid-nitrogen temperature---piezoelectric (PZ)
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::301e71fcea6c126a83059d288c8c98dc
https://doi.org/10.1103/physrevapplied.6.014004
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3
Optical properties of ion-implanted silicon and separation by implantation of oxygen silicon-on-insulator substrates in the infrared: Study of B+ and P2+ implantation doping
Autor: D. I. Siapkas, C. C. Katsidis
Publikováno v: Thin Solid Films. 517:4307-4317
The optical properties of ion implanted silicon and silicon-on-insulator substrates have been studied by Fourier transform infrared spectroscopy. The influence of the implanted-ion mass in changing the refractive index of a silicon target has been ex
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ed588d080f874c0ca6511c456cf15ddd
https://doi.org/10.1016/j.tsf.2008.11.144
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4
On the uncertainty estimation of electromagnetic field measurements using field sensors: a general approach
Autor: Thomas D. Xenos, C. C. Katsidis, Andreas Miaoudakis, V. Zacharopoulos, Dimitrios Stratakis
Publikováno v: Radiation Protection Dosimetry. 133:240-247
One of the most common and popular practices on measuring the non-ionising electric and/or magnetic field strength employs field meters and the appropriate electric and/or magnetic field strength sensors. These measurements have to meet several requi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::418ff37ade50a62a3a469c734749bca9
https://doi.org/10.1093/rpd/ncp050
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7
Structural and Compositional Characterization of High Energy Separation by Implantation of Oxygen Structures Using Infrared Spectroscopy
Autor: C.L. Mitsas, N. Hatzopoulos, D. I. Siapkas, Triantafillia Zorba, C. C. Katsidis, P.L.F. Hemment
Publikováno v: Journal of The Electrochemical Society. 143:3019-3032
Silicon was implanted with 2 MeV O + ions with doses covering the range from 1 x 10 17 to 2 x 10 18 O + cm -2 , at an implantation temperature of 700°C. Subsequently, samples were capped and annealed at 1300°C. Infrared reflectance spectroscopy has
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::375984b3754a49b43c297a3a3a1b31e7
https://doi.org/10.1149/1.1837142
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8
Optical characterization of doped SIMOX structures using FTIR spectroscopy
Autor: D. Panknin, D. I. Siapkas, Wolfgang Skorupa, C. C. Katsidis, N. Hatzopoulos
Publikováno v: Microelectronic Engineering. 28:439-442
The applicability of FTIR Spectroscopy to the non destructive structural and electrical characterization of doped SIMOX structures is demonstrated. The analysis of the infrared reflectivity spectra yields the refractive index, the free carrier densit
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8e1114d94168a086a45b301f816ecc03
https://doi.org/10.1016/0167-9317(95)00092-m
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9
Structure, strain, and composition profiling of InAs/GaAs(211)B quantum dot superlattices
Autor: G. P. Dimitrakopulos, S. Germanis, Joseph Kioseoglou, Th. Kehagias, N. Florini, Nikos T. Pelekanos, C. C. Katsidis, Zacharias Hatzopoulos
Publikováno v: Journal of Applied Physics. 119:034304
The morphology, nanostructure, and strain properties of InAs quantum dots (QDs) grown on GaAs(211)B, uncapped or buried, are explored by transmission electron microscopy and related quantitative techniques. Besides the built-in piezoelectric field, o
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1aa8ea16e47d34cd43d18156a27c583c
https://doi.org/10.1063/1.4940419
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10
Depth profiling of ion implanted materials with skewed doping distributions using Fourier transform infrared spectroscopy
Autor: C. C. Katsidis
Publikováno v: Applied optics. 47(2)
The applicability of a general transfer-matrix method for optical analysis of multilayers reported earlier [Katsidis and Siapkas, Appl. Opt. 41, 3978 (2002)] is being extended so as to simulate asymmetric implantation doping profiles using distributi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::314cadfdaefde6dd3bf6d3d3dba9f190
https://pubmed.ncbi.nlm.nih.gov/18188203
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