Zobrazeno 1 - 10
of 36
pro vyhledávání: '"C. Busseret"'
Publikováno v:
Microelectronics Reliability. 47:631-634
A specific time-resolved dynamic current measurement procedure is used to characterize high-field electron tunnel injection to the drain of EEPROMs. This allows the direct observation of a transient regime eventually occurring in the case of moderate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e58930f1251ed443d618e38bfeb16d5e
https://doi.org/10.1016/j.microrel.2007.01.055
https://doi.org/10.1016/j.microrel.2007.01.055
Publikováno v:
Microelectronics Reliability. 47:729-732
From quantum simulations of both capacitance and current measurements, the main physical parameters (dielectric thickness and permittivity, doping levels) of hafnium based (HfSiO x and HfO 2 ) gate oxide capacitors have been extracted. Three kinds of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e881244687bbaa29c15ac921afac9e7
https://doi.org/10.1016/j.microrel.2007.01.061
https://doi.org/10.1016/j.microrel.2007.01.061
Publikováno v:
Solid-State Electronics
Solid-State Electronics, 2006, pp.50(5), May (2006) 769-733
Solid-State Electronics, Elsevier, 2006, pp.50(5), May (2006) 769-733
Solid-State Electronics, 2006, pp.50(5), May (2006) 769-733
Solid-State Electronics, Elsevier, 2006, pp.50(5), May (2006) 769-733
The hole charging mechanism in Germanium nanocrystals (nc-Ge) embedded in SiO 2 fabricated by low pressure chemical vapour deposition is investigated by means of capacitance–voltage ( C – V ) analysis. The charging kinetics shows a logarithmic be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::159fe7809b1dd2489593ecb0fe05e6a2
https://doi.org/10.1016/j.sse.2006.02.003
https://doi.org/10.1016/j.sse.2006.02.003
Publikováno v:
Solid-State Electronics. 50:134-141
In this paper we present a new model of charging kinetics in Silicon nanocrystals memories based on a granular charging of a floating gate. In 2000, a previous model, due to De Salvo and co-workers, was based on a continuous charging of a floating ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbe5b40ae1b6ac4eed93d8e3cf15832b
https://doi.org/10.1016/j.sse.2005.10.033
https://doi.org/10.1016/j.sse.2005.10.033
Publikováno v:
IEEE Transactions on Electron Devices. 53:14-22
In the field of nonvolatile memories, substantial improvement of reliability is obtained by replacing the continuous polysilicon floating gate by a planar distribution of silicon nanocrystals, each acting as a storage node. The test devices in the pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5656e8aabe99227aff2bdab23ba82a29
https://doi.org/10.1109/ted.2005.860630
https://doi.org/10.1109/ted.2005.860630
Publikováno v:
Journal of Non-Crystalline Solids. 322:191-198
This work deals with the programming window closure observed in electrically erasable programmable read only memories as the number of write/erase cycles increases. This aging phenomenon is attributed to the build-up of oxide charge in the tunnel are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::821e644130d19322ce1f81db90115cd9
https://doi.org/10.1016/s0022-3093(03)00201-1
https://doi.org/10.1016/s0022-3093(03)00201-1
Publikováno v:
Journal of Non-Crystalline Solids. 322:240-245
One of the main reliability problem in electrically erasable programmable read only memory (EEPROM) devices is the progressive closure of the programming window as the number of applied write/erase cycles is increased. This closure is qualitatively a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c6788a40aee70650c477fb0bf11de0d
https://doi.org/10.1016/s0022-3093(03)00208-4
https://doi.org/10.1016/s0022-3093(03)00208-4
Autor:
Gérard Guillot, C. Busseret, Caroline Bonafos, Joan Ramon Morante, O. Gonzalez, Mustapha Lemiti, Georges Bremond, Abdelkader Souifi, B. Garrido, J. de la Torre, A. Poncet
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 16:326-330
In this work, we describe how to fabricate good quality 3 nm nc-Si with low size distribution in thermal SiO2 oxides. Photoluminescence, excited photoluminescence, and photocurrent measurements are discussed on the basis of theoretical calculations o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a906e5cf61340b6b35f59fbea8a20312
https://doi.org/10.1016/s1386-9477(02)00612-4
https://doi.org/10.1016/s1386-9477(02)00612-4
Autor:
Noel Magnea, Frédéric Mazen, Thierry Baron, B. Aspard, C. Busseret, Pascal Gentile, Abdelkader Souifi, M.N. Séméria, F. Fournel, P. Mur, Hubert Moriceau
Publikováno v:
Microelectronic Engineering. :511-515
We present a study of nucleation and organization of Si quantum dots (Si QDs) grown on insulating layers. The samples were investigated by scanning electron microscopy, high-resolution transmission electron microscopy, and scanning tunneling microsco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26a77f1e051141ed22a4c816d0f7dfc3
https://doi.org/10.1016/s0167-9317(02)00447-1
https://doi.org/10.1016/s0167-9317(02)00447-1
Autor:
C. Busseret, M.N. Semeria, Eric Gautier, Abdelkader Souifi, S Monfray, N. Buffet, Thierry Baron
Publikováno v:
Materials Science and Engineering: C. 19:237-241
Nanocrystal-based devices are possible candidates for future electronics. In this context, we have studied the electronic properties of Si nanocrystals (nc-Si) embedded in a SiO 2 matrix. This work is devoted to the characterization of nc-Si by means
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a1b94a1e3374b432566797496c0c19f
https://doi.org/10.1016/s0928-4931(01)00482-9
https://doi.org/10.1016/s0928-4931(01)00482-9