Zobrazeno 1 - 10
of 57
pro vyhledávání: '"C. Bulucea"'
Autor:
C. Bulucea, Fu-Cheng Wang
Publikováno v:
IEEE Electron Device Letters. 21:476-478
A double implant source/drain junction formation process using BF/sub 2/ and boron is proposed for PMOSFET in sum-0.25-/spl mu/m CMOS technology. Compared to the more conventional, single implant processes using BF/sub 2/, the double implant process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::536cee6b0d8615d2bbdad552e36da1ca
https://doi.org/10.1109/55.870606
https://doi.org/10.1109/55.870606
Publikováno v:
2008 International Semiconductor Conference.
This paper considers the gate-controlled diode as a device performing both analog and digital functions. This behavior is encountered in the breakdown regime of the device, where the transfer characteristic has slopes in a wide range, from a cvasilin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15000044f3b90dee13ba46df128a0a81
https://doi.org/10.1109/smicnd.2008.4703321
https://doi.org/10.1109/smicnd.2008.4703321
Publikováno v:
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.
Oxide charging, adversely influencing PNP collector-base capacitance, has been observed and modeled physically in a complementary bipolar process that uses dielectric isolation. A practical solution to alleviate this effect is described along with tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::043310c78791d7f4d94bc4cd674caf22
https://doi.org/10.1109/bipol.2004.1365740
https://doi.org/10.1109/bipol.2004.1365740
Autor:
A. Sibaja-Hernandez, Stefaan Decoutere, Roger Loo, C. Bulucea, Mingwei Xu, K. Van Wichelen, Eddy Kunnen, A. Sadovnikov, Liesbeth Witters, C. Knorr
Publikováno v:
IEEE International Electron Devices Meeting 2003.
A SiGe:C HBT in 0.18 /spl mu/m BiCMOS is developed for ultra low power applications based on a unique optimization solution, including a dedicated PIN e/b design combined with a two-step Ge profile and a two-step SIC. State-of-the-art performance is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b079f3717e8ad6f5556b79284458346f
https://doi.org/10.1109/iedm.2003.1269181
https://doi.org/10.1109/iedm.2003.1269181
Publikováno v:
Automotive Power Electronics.
A normally-on MOSFET structure called j-MOS for automotive electronic systems applications is discussed. These devices are built on silicon-on-insulator (SOI) and in bulk silicon and can be integrated as a smart power circuit element. The lowest on-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66a8c9a36b99a9ce8d4c0bdb62a973fe
https://doi.org/10.1109/ape.1989.97147
https://doi.org/10.1109/ape.1989.97147
Publikováno v:
Automotive Power Electronics.
Two advanced 60 V power MOSFET technologies are presented for automotive applications. The first is a submicron channel DMOS technology which yields a specific on-resistance of 1.7 m Omega -cm/sup 2/, about half the value obtained by present producti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57e06e671df90173a67748e3006baa87
https://doi.org/10.1109/ape.1989.97148
https://doi.org/10.1109/ape.1989.97148
Autor:
Ph. Lindorfer, C. Bulucea
Publikováno v:
Simulation of Semiconductor Devices and Processes ISBN: 9783709173725
Neural modeling of transistor current-voltage characteristics is explored as a possible solution to the complexity and accuracy problems currently encountered with analytical representations of VLSI devices. The neural modeling methodology is discuss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e7cf0572a08a7996af79c4aefd9c861
https://doi.org/10.1007/978-3-7091-6657-4_7
https://doi.org/10.1007/978-3-7091-6657-4_7
Autor:
C. Bulucea, M.F. Paun
Publikováno v:
Human Reproduction. 14:362-363
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5257596fc6fe3c3d91c133254511ad7
https://doi.org/10.1093/humrep/14.suppl_3.362-a
https://doi.org/10.1093/humrep/14.suppl_3.362-a
Autor:
C. Bulucea, M.F. Paun
Publikováno v:
Human Reproduction. 14:255-255
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcb09800408933a2c7ef590828a4e573
https://doi.org/10.1093/humrep/14.suppl_3.255-a
https://doi.org/10.1093/humrep/14.suppl_3.255-a
Publikováno v:
Solid-State Electronics. 17:881-888
Surface breakdown in silicon planar junctions is analysed with emphasis on the evaluation of the critical field (i.e., the maximum electric field within the depletion region at breakdown). This parameter is determined by a computer-aided experimental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46ceb22db562753b100d63082e317761
https://doi.org/10.1016/0038-1101(74)90040-9
https://doi.org/10.1016/0038-1101(74)90040-9