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Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 51:1129-1134
In this paper, we present recent results on an SiC MESFET and we describe two of the main limitation mechanisms encountered: the self-heating and the trapping effects. Results on recent MESFET devices processed by THALES Research and Technology (TRT)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18934a9628d34099f6e1eeac0257c0c8
https://doi.org/10.1109/tmtt.2003.809678
https://doi.org/10.1109/tmtt.2003.809678
Autor:
C. Brylinski, Amy F, Yeukuang Hwu, P.-F. Storino, Patrick Soukiassian, Gérald Dujardin, Yves J. Chabal, Hanna Enriquez, Andrew J. Mayne
Publikováno v:
Physical Review Letters. 86:4342-4345
The atomic scale oxidation of the alpha-SiC(0001)-(3 x 3) surface is investigated by atom-resolved scanning tunneling microscopy, core level synchrotron radiation based photoemission spectroscopy, and infrared absorption spectroscopy. The results rev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d81befb64571b7efff1ac03a464c721
https://doi.org/10.1103/physrevlett.86.4342
https://doi.org/10.1103/physrevlett.86.4342
Publikováno v:
Microelectronic Engineering. 55:369-374
Schottky contacts are investigated on n-type 4H-SiC by electrical measurements and microstructural analyses to understand the behaviour of such a barrier. Titanium and tungsten were deposited after RCA cleaning as surface preparation of SiC. Electric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dde7605eb48960c99a37d0036853abc
https://doi.org/10.1016/s0167-9317(00)00469-x
https://doi.org/10.1016/s0167-9317(00)00469-x
Publikováno v:
Surface Science. 464:L691-L696
We investigate the 6H-SiC(0001) 3×3 surface reconstruction by Si 2p and C 1s core-level photoemission spectroscopy using synchrotron radiation providing the first identification of surface core-level shifted components. Specific spectral features at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd8af3821a156e0c7b8946b6c5587cc3
https://doi.org/10.1016/s0039-6028(00)00637-3
https://doi.org/10.1016/s0039-6028(00)00637-3
Publikováno v:
IEEE Transactions on Nuclear Science. 47:598-603
This study investigates the response of two MESFET 4H-SiC structures to irradiation at very high total dose levels. It demonstrates that electrically active defects created or stimulated by irradiation change the component response. A MESFET with a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f77d0d3c35e3d088e411f3f24f967e1e
https://doi.org/10.1109/23.856486
https://doi.org/10.1109/23.856486
Autor:
Anelia Kakanakova-Georgieva, C. Arnodo, O. Noblanc, S. Cassette, Roumen Kakanakov, Ts. Marinova, C. Brylinski, Liliana Kassamakova
Publikováno v:
Applied Surface Science. 151:225-232
The interface chemistry of WN/4H–SiC structures has been studied by means of X-ray photoelectron spectroscopy (XPS). XPS investigations have been performed on as deposited, 800°C and 1200°C annealed (4 min) samples. The as deposited and 800°C an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f1558d317e539c108e9bda1d60fc557
https://doi.org/10.1016/s0169-4332(99)00277-9
https://doi.org/10.1016/s0169-4332(99)00277-9
Publikováno v:
Thin Solid Films. :637-641
The interface chemistry of nickel and tungsten based contacts on SiC has been investigated by XPS on as-deposited samples and after contact formation. After annealing at 950 °C for 10 min, Ni/SiC and Ni/Si/SiC ohmic contacts are formed due to the ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72c7a0d4962b3ae7082b29cd8e7ec2b8
https://doi.org/10.1016/s0040-6090(98)01668-x
https://doi.org/10.1016/s0040-6090(98)01668-x
Publikováno v:
Thin Solid Films. 337:180-183
Annealed W (WN)/4H–SiC interfaces have been compared on the basis of X-ray photoelectron spectroscopy (XPS) studies. The 1200°C annealed W (WN)/4H–SiC structures are characterized by intense interface reactions leading to tungsten carbide and tu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a24726271fc8bcf453a01c61d48f7805
https://doi.org/10.1016/s0040-6090(98)01199-7
https://doi.org/10.1016/s0040-6090(98)01199-7
Autor:
Anelia Kakanakova-Georgieva, C. Brylinski, Attila Sulyok, Ts. Marinova, György Radnóczi, Roumen Kakanakov, C. Arnodo, Béla Pécz, O. Noblanc, S. Cassette, Liliana Kassamakova
Publikováno v:
Materials Science Forum. :817-820
WN has been deposited by reactive sputtering on 4H-SiC to make Schottky rectifiers. The physical properties of the interface have been studied by XPS and TEM for as-deposited, 800 and 1200 C annealed samples. The two former samples reveal steep inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a5594565b392e750575a19038340d46
https://doi.org/10.4028/www.scientific.net/msf.264-268.817
https://doi.org/10.4028/www.scientific.net/msf.264-268.817