Ti/Al-based contacts to p-type SiC and GaN for power device applications

Autor: F. Roccaforte 1, M. Vivona 1, G. Greco 1, R. Lo Nigro 1, F. Giannazzo 1, S. Di Franco 1, C. Bongiorno 1, F. Iucolano 2, A. Frazzetto 2, S. Rascuna 2, A. Patti 2, M. Saggio, 2

Publikováno v: Physica status solidi. A, Applications and materials science
214 (2017): 1600357-1–1600357-7. doi:10.1002/pssa.201600357
info:cnr-pdr/source/autori:F. Roccaforte 1, M. Vivona 1, G. Greco 1, R. Lo Nigro 1, F. Giannazzo 1, S. Di Franco 1, C. Bongiorno 1, F. Iucolano 2, A. Frazzetto 2, S. Rascuna 2, A. Patti 2, M. Saggio, 2/titolo:Ti%2FAl-based contacts to p-type SiC and GaN for power device applications/doi:10.1002%2Fpssa.201600357/rivista:Physica status solidi. A, Applications and materials science (Print)/anno:2017/pagina_da:1600357-1/pagina_a:1600357-7/intervallo_pagine:1600357-1–1600357-7/volume:214

Metal contacts (Schottky or Ohmic) to p-type wide band gap (WBG) semiconductors SiC and GaN are important for power devices technologies. This work reports on the properties of Ti/Al-based contacts to p-type 4H-SiC and p-type GaN, monitored using dif

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::46b0334f4e76e026f90902f731890d2b

Atomic layer deposition of Al2O3 thin films for metal insulator semiconductor applications on 4H-SiC

Autor: E. Schiliro 1, S. Di Franco 1, P. Fiorenza 1, C. Bongiorno 1, H. Gargouri 2, M. Saggio 3, R. Lo Nigro 1, F. Roccaforte 1

Publikováno v: Materials science forum 858 (2016): 685–688. doi:10.4028/www.scientific.net/MSF.858.685
info:cnr-pdr/source/autori:E. Schiliro 1, S. Di Franco 1, P. Fiorenza 1, C. Bongiorno 1, H. Gargouri 2, M. Saggio 3, R. Lo Nigro 1, F. Roccaforte 1/titolo:Atomic layer deposition of Al2O3 thin films for metal insulator semiconductor applications on 4H-SiC/doi:10.4028%2Fwww.scientific.net%2FMSF.858.685/rivista:Materials science forum/anno:2016/pagina_da:685/pagina_a:688/intervallo_pagine:685–688/volume:858

This work reports on the growth and characterization of Al2O3 films on 4H-SiC, by Plasma Enhanced-Atomic Layer Deposition (PE-ALD). Different techniques were used to investigate the morphological, structural and electrical features of the Al2O3 films

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::a7354144c4c95b905e68ba237f874000
https://publications.cnr.it/doc/357650

Mechanism of Ohmic contact formation in Ti/Al bilayers on AlGaN/GaN heterostructures with a different crystalline quality

Autor: G. Greco 1, F. Iucolano 2, C. Bongiorno 1, S. Di Franco 1, F. Giannazzo 1, M. Leszczy?ski 3, F. Roccaforte 1

Publikováno v: 38th Workshop on Compound Semiconductors Devices and Integrated Circuits (WOCSDICE2014), pp. 95–96, Delphi (Greece), 15-18 June, 2014
info:cnr-pdr/source/autori:G. Greco 1, F. Iucolano 2, C. Bongiorno 1, S. Di Franco 1, F. Giannazzo 1, M. Leszczy?ski 3, F. Roccaforte 1/congresso_nome:38th Workshop on Compound Semiconductors Devices and Integrated Circuits (WOCSDICE2014)/congresso_luogo:Delphi (Greece)/congresso_data:15-18 June, 2014/anno:2014/pagina_da:95/pagina_a:96/intervallo_pagine:95–96

In this paper, the electrical and structural properties of Ti/Al Ohmic contacts have been investigated comparing AlGaN/GaN heterostructures with different dislocation density. The annealing temperature leading to Ohmic be-haviour is related to the ma

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::daa23188f865540e5f595b5d92e1e754
https://publications.cnr.it/doc/284906