Study of the Interface Properties in InGaP/GaAs multi quantum wells by Low-Pressure MOVPE from liquid sources

Autor: M. Begotti 1, M. Longo 1, R. Magnanini 1, A. Parisini 1, L. Tarricone 1, C. Bocchi 2, L. Lazzarini 2, L. Nasi 2, M. Geddo 3

Publikováno v: info:cnr-pdr/source/autori:M. Begotti 1, M. Longo 1, R. Magnanini 1, A. Parisini 1, L. Tarricone 1, C. Bocchi 2, L. Lazzarini 2, L. Nasi 2, M. Geddo 3/congresso_nome:10th Europeam Workshop on Metalorganic Vapour Phase Epitaxy/congresso_luogo:Lecce/congresso_data:8-11 Giugno 2003/anno:2003/pagina_da:/pagina_a:/intervallo_pagine

The Al-free InGaP/GaAs heterostructure is an interesting alternative to AlGaAs/GaAs system in a wide range of micro- and optoelectronic applications [1-3]. Nevertheless, the required ML-abruptness of both normal and inverse InGaP-GaAs interfaces is n

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::b3aab2ae0557700997ef25658858cf38